NXP Semiconductors PIN Diodes 25

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Manufacturers (1)
    • NXP Semiconductors
    • Agilent Technologies
    • Broadcom
    • Diodes Incorporated
    • Gec Plessey Semiconductors
    • Hewlett Packard
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Micro Commercial Components
    • Microchip Technology
    • Nte Electronics
    • Onsemi
    • Osram Opto Semiconductors
    • ROHM
    • Renesas Electronics
    • STMicroelectronics
    • Skyworks Solutions
    • TE Connectivity
    • Toshiba
Diode Type
    • PIN DIODE
Terminal Position
    • AXIAL
    • BOTTOM
    • DUAL
    • END
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
Terminal Form
    • BUTT
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • WIRE
    • WRAP AROUND
No. of Terminals
    • 1
    • 12
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Surface Mount
    • NO
    • YES
Package Shape
    • ELLIPTICAL
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • GLASS
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Diode Resistive Test Current
    • .01 mA
    • .02 mA
    • .5 mA
    • 1 mA
    • 1.5 mA
    • 10 mA
    • 100 mA
    • 2 mA
    • 20 mA
    • 25 mA
    • 3 mA
    • 5 mA
    • 50 mA
    • 500 mA
Config
    • 1SE4
    • 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • COMMON ANODE, 2 ELEMENTS
    • COMMON CATHODE, 2 ELEMENTS
    • COMPLEX
    • RING, 4 ELEMENTS
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 3 ELEMENT
    • SEPARATE, 3 ELEMENTS
    • SEPARATE, 4 ELEMENTS
    • SEPARATE, 5 ELEMENTS
    • SEPARATE, 6 ELEMENTS
    • SERIES CONNECTED, 2 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SINGLE
Frequency Band
    • C BAND
    • HIGH FREQUENCY
    • HIGH FREQUENCY TO C BAND
    • HIGH FREQUENCY TO KU BAND
    • HIGH FREQUENCY TO L BAND
    • HIGH FREQUENCY TO S BAND
    • HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • HIGH FREQUENCY TO X BAND
    • KA BAND
    • KU BAND
    • L BAND
    • L BAND TO KU BAND
    • LOW FREQUENCY
    • MEDIUM FREQUENCY
    • MEDIUM FREQUENCY TO C BAND
    • MEDIUM FREQUENCY TO L BAND
    • MEDIUM FREQUENCY TO S BAND
    • MEDIUM FREQUENCY TO VERY HIGH FREQUENCY
    • MILLIMETER WAVE BAND
    • S BAND
    • ULTRA HIGH FREQUENCY
    • ULTRA HIGH FREQUENCY TO KU BAND
    • ULTRA HIGH FREQUENCY TO L BAND
    • ULTRA HIGH FREQUENCY TO S BAND
    • ULTRA HIGH FREQUENCY TO X BAND
    • VERY HIGH FREQUENCY
    • VERY HIGH FREQUENCY TO C BAND
    • VERY HIGH FREQUENCY TO KA BAND
    • VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • VERY LOW FREQUENCY TO L BAND
    • X BAND
Maximum Forward Voltage (VF)
    • .34 V
    • .4 V
    • .87 V
    • .9 V
    • 1 V
    • 1.1 V
    • 1.2 V
Maximum Diode Capacitance
    • .02 pF
    • .025 pF
    • .04 pF
    • .045 pF
    • .05 pF
    • .06 pF
    • .065 pF
    • .1 pF
    • .12 pF
    • .14 pF
    • .15 pF
    • .16 pF
    • .2 pF
    • .22 pF
    • .23 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .28 pF
    • .3 pF
    • .31 pF
    • .32 pF
    • .35 pF
    • .37 pF
    • .375 pF
    • .38 pF
    • .4 pF
    • .42 pF
    • .43 pF
    • .44 pF
    • .45 pF
    • .48 pF
    • .5 pF
    • .55 pF
    • .56 pF
    • .6 pF
    • .65 pF
    • .7 pF
    • .75 pF
    • .8 pF
    • .82 pF
    • .85 pF
    • .9 pF
    • 1 pF
    • 1.1 pF
    • 1.11 pF
    • 1.2 pF
    • 1.25 pF
    • 1.3 pF
    • 1.5 pF
    • 1.6 pF
    • 1.7 pF
    • 10 pF
    • 11 pF
    • 12 pF
    • 2 pF
    • 2.4 pF
    • 3 pF
    • 38 pF
    • 4 pF
    • 5 pF
    • 6 pF
    • 8 pF
Technology
    • POSITIVE-INTRINSIC-NEGATIVE
    • SCHOTTKY
Maximum Reverse Current
    • .01 uA
    • .05 uA
    • .1 uA
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Reverse Test Voltage
    • 0 V
    • 1 V
    • 10 V
    • 100 V
    • 15 V
    • 16 V
    • 180 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 38 V
    • 40 V
    • 5 V
    • 50 V
    • 6 V
    • 60 V
    • 80 V
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • GRID ARRAY
    • IN-LINE
    • LONG FORM
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • Other Diodes
    • PIN Diodes
    • Rectifier Diodes
    • Varactors
Maximum Repetitive Peak Reverse Voltage
    • 100 V
    • 35 V
    • 50 V
    • 60 V
    • 75 V
    • 80 V
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 175 Cel
Application
    • ATTENUATOR
    • ATTENUATOR; LIMITER
    • ATTENUATOR; LIMITER; SWITCHING
    • ATTENUATOR; SWITCHING
    • GENERAL PURPOSE
    • LIMITER
    • LIMITER; SWITCHING
    • SWITCHING
Minimum Operating Temperature
    • -40 Cel
    • -55 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn)
    • NICKEL PALLADIUM GOLD
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN OVER NICKEL
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Lead (Sn/Pb)
JESD-30 Code
    • E-XALF-W2
    • O-CDMW-F2
    • O-CDMW-N2
    • O-CELF-R2
    • O-CEMW-N2
    • O-CXMW-G2
    • O-LALF-W2
    • O-LELF-R2
    • O-PBCY-T2
    • O-PBCY-T3
    • O-XALF-W2
    • O-XELF-R2
    • O-XEMW-N2
    • O-XRPM-F2
    • O-XUPM-N1
    • O-XUUC-N1
    • R-CBCC-N4
    • R-CDFP-F4
    • R-CDMW-F2
    • R-CDSO-F4
    • R-CEDB-N2
    • R-CXMW-G2
    • R-LBCC-N2
    • R-MDFM-F2
    • R-PBCC-N2
    • R-PBGA-B4
    • R-PDIP-T2
    • R-PDSO-C2
    • R-PDSO-F12
    • R-PDSO-F2
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-N2
    • R-PSSO-G1
    • R-XBCC-N12
    • R-XBCC-N2
    • R-XBCC-N4
    • R-XBCC-N8
    • R-XDMW-F2
    • R-XDSO-N2
    • R-XUUC-N4
    • S-CDFP-F4
    • S-CDMW-F2
    • S-CUUC-N2
    • S-PDSO-C2
    • S-PDSO-N2
    • S-PDSO-N6
    • S-PDSO-N8
    • S-PSSO-C2
    • S-PSSO-N2
    • S-XDSO-N2
    • S-XUUC-N1
    • S-XUUC-N2
    • X-XXMW-F2
Maximum Diode Forward Resistance
    • .3 ohm
    • .35 ohm
    • .5 ohm
    • .6 ohm
    • .65 ohm
    • .7 ohm
    • .75 ohm
    • .77 ohm
    • .8 ohm
    • .85 ohm
    • .9 ohm
    • .95 ohm
    • 1 ohm
    • 1.1 ohm
    • 1.17 ohm
    • 1.2 ohm
    • 1.25 ohm
    • 1.3 ohm
    • 1.35 ohm
    • 1.5 ohm
    • 1.7 ohm
    • 1.8 ohm
    • 1.9 ohm
    • 10 ohm
    • 100 ohm
    • 11 ohm
    • 12 ohm
    • 1200 ohm
    • 14.5 ohm
    • 2 ohm
    • 2.2 ohm
    • 2.3 ohm
    • 2.5 ohm
    • 2.8 ohm
    • 20 ohm
    • 22 ohm
    • 3 ohm
    • 3.2 ohm
    • 3.3 ohm
    • 3.5 ohm
    • 3.7 ohm
    • 3.8 ohm
    • 4 ohm
    • 4.2 ohm
    • 4.5 ohm
    • 4.9 ohm
    • 40 ohm
    • 4200 ohm
    • 5 ohm
    • 5.5 ohm
    • 6.5 ohm
    • 7 ohm
    • 7.5 ohm
    • 70 ohm
    • 8 ohm
    • 9 ohm
Moisture Sensitivity Level (MSL)
    • 1
    • 2
Case Connection
    • ANODE
    • ANODE AND CATHODE
    • CATHODE
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .1 W
    • .125 W
    • .13 W
    • .135 W
    • .14 W
    • .15 W
    • .2 W
    • .24 W
    • .25 W
    • .26 W
    • .28 W
    • .3 W
    • .315 W
    • .35 W
    • .4 W
    • .415 W
    • .5 W
    • .6 W
    • .7 W
    • .715 W
    • .75 W
    • 1 W
    • 1.25 W
    • 1.3 W
    • 1.4 W
    • 1.5 W
    • 10 W
    • 2 W
    • 2.5 W
    • 3 W
    • 4.5 W
    • 6 W
    • 7.5 W
Nominal Diode Capacitance
    • .017 pF
    • .02 pF
    • .025 pF
    • .045 pF
    • .06 pF
    • .08 pF
    • .1 pF
    • .12 pF
    • .13 pF
    • .15 pF
    • .16 pF
    • .17 pF
    • .18 pF
    • .2 pF
    • .21 pF
    • .22 pF
    • .23 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .27 pF
    • .28 pF
    • .3 pF
    • .31 pF
    • .32 pF
    • .33 pF
    • .34 pF
    • .35 pF
    • .36 pF
    • .37 pF
    • .375 pF
    • .4 pF
    • .42 pF
    • .45 pF
    • .48 pF
    • .5 pF
    • .52 pF
    • .53 pF
    • .55 pF
    • .56 pF
    • .57 pF
    • .6 pF
    • .65 pF
    • .7 pF
    • .75 pF
    • .8 pF
    • .85 pF
    • .9 pF
    • 1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.5 pF
    • 1.7 pF
    • 2 pF
    • 2.2 pF
    • 2.4 pF
    • 250000 pF
    • 4 pF
    • 700000 pF
    • 9 pF
Additional Features
    • AVAILABLE IN BOTH POLARITIES
    • EUROPEAN PART NUMBER
    • HIGH RELIABILITY
    • HIGH RELIABILITY, HIGH VOLTAGE, LOW LEAKAGE CURRENT
    • HIGH RELIABILITY, LOW DISTORTION
    • HIGH VOLTAGE
    • LOW DISTORTION
    • LOW DISTORTION, METALLURGICALLY BONDED
    • LOW HARMONIC DISTORTION
    • LOW LEAKAGE
    • LOW LEAKAGE, LOW DISTORTION
    • PD-CASE
    • TR, 7 INCH: 3000
    • TTL COMPATIBLE
Nominal Minority Carrier Lifetime
    • .0001 us
    • .004 us
    • .005 us
    • .007 us
    • .01 us
    • .02 us
    • .025 us
    • .026 us
    • .03 us
    • .035 us
    • .036 us
    • .04 us
    • .045 us
    • .05 us
    • .07 us
    • .075 us
    • .08 us
    • .09 us
    • .1 us
    • .11 us
    • .12 us
    • .125 us
    • .15 us
    • .17 us
    • .18 us
    • .2 us
    • .25 us
    • .26 us
    • .27 us
    • .28 us
    • .3 us
    • .31 us
    • .32 us
    • .35 us
    • .4 us
    • .48 us
    • .5 us
    • .55 us
    • .6 us
    • .65 us
    • .7 us
    • .75 us
    • .8 us
    • .9 us
    • 1 us
    • 1.05 us
    • 1.1 us
    • 1.17 us
    • 1.175 us
    • 1.25 us
    • 1.3 us
    • 1.5 us
    • 1.55 us
    • 1.6 us
    • 1.8 us
    • 10 us
    • 19 us
    • 2 us
    • 2.5 us
    • 2.8 us
    • 20 us
    • 25 us
    • 3 us
    • 3.5 us
    • 30 us
    • 4 us
    • 5 us
    • 50 us
    • 500 us
    • 6 us
    • 6.5 us
    • 8 us
JEDEC-95 Code
    • DO-214AC
    • DO-34
    • TO-236AB
    • TO-92
Minimum Breakdown Voltage
    • 100 V
    • 1000 V
    • 120 V
    • 15 V
    • 150 V
    • 175 V
    • 180 V
    • 20 V
    • 200 V
    • 25 V
    • 250 V
    • 30 V
    • 300 V
    • 35 V
    • 400 V
    • 45 V
    • 50 V
    • 500 V
    • 60 V
    • 600 V
    • 65 V
    • 70 V
    • 75 V
    • 80 V
Maximum Non Repetitive Peak Forward Current
    • 2 A
    • 2.5 A
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • 5
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 220
    • 225
    • 235
    • 240
    • 245
    • 260
    • 265
    • NOT SPECIFIED
Diode Element Material
    • GALLIUM ARSENIDE
    • SILICON
Diode Resistive Test Frequency
    • 1 MHz
    • 100 MHz
    • 1000 MHz
    • 10000 MHz
    • 120 MHz
    • 1500 MHz
    • 200 MHz
    • 2200 MHz
    • 500 MHz
Reference Standard
    • AEC-Q101
    • ESA-SCC-5513/017
    • ESA-SCC-5513/030
    • IEC-60134
    • IEC-61000-4-2; 4-5
    • MIL-19500
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Diode Resistive Test Current Config Frequency Band Maximum Forward Voltage (VF) Maximum Diode Capacitance Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Application Minimum Operating Temperature Terminal Finish JESD-30 Code Maximum Diode Forward Resistance Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features Nominal Minority Carrier Lifetime JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Diode Resistive Test Frequency Reference Standard

BAP50-03,135

NXP Semiconductors

PIN DIODE

YES

.5 mA

1 V

PIN Diodes

150 Cel

TIN

40 ohm

1

.55 pF

50 V

e3

30

260

100 MHz

BAP1321-02,115

NXP Semiconductors

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

SINGLE

S BAND

.45 pF

POSITIVE-INTRINSIC-NEGATIVE

1

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

TIN

R-PDSO-F2

1.3 ohm

Not Qualified

.715 W

.4 pF

HIGH VOLTAGE

.5 us

60 V

e3

30

260

SILICON

100 MHz

BAP1321-03,115

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

SINGLE

S BAND

.45 pF

POSITIVE-INTRINSIC-NEGATIVE

1

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

TIN

R-PDSO-G2

1.3 ohm

1

Not Qualified

.5 W

.4 pF

.5 us

60 V

e3

30

260

SILICON

100 MHz

BAP1321-04,215

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

S BAND

.45 pF

POSITIVE-INTRINSIC-NEGATIVE

2

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

TIN

R-PDSO-G3

1.3 ohm

1

Not Qualified

.25 W

.42 pF

.5 us

TO-236AB

60 V

e3

30

260

SILICON

100 MHz

BAP50-03,115

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

SINGLE

.55 pF

POSITIVE-INTRINSIC-NEGATIVE

1

1 V

SMALL OUTLINE

PIN Diodes

150 Cel

-65 Cel

TIN

R-PDSO-G2

5 ohm

1

Not Qualified

.5 W

.55 pF

50 V

e3

30

260

SILICON

100 MHz

BAP50-04W,115

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.6 pF

POSITIVE-INTRINSIC-NEGATIVE

2

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

-65 Cel

TIN

R-PDSO-G3

5 ohm

1

Not Qualified

.45 pF

1.05 us

50 V

e3

30

260

SILICON

100 MHz

BAP50-05,215

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

COMMON CATHODE, 2 ELEMENTS

.6 pF

POSITIVE-INTRINSIC-NEGATIVE

2

1 V

SMALL OUTLINE

PIN Diodes

150 Cel

-65 Cel

TIN

R-PDSO-G3

40 ohm

1

Not Qualified

.25 W

.6 pF

50 V

e3

30

260

SILICON

100 MHz

BAP50-05W,115

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

COMMON CATHODE, 2 ELEMENTS

.6 pF

POSITIVE-INTRINSIC-NEGATIVE

2

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

-65 Cel

TIN

R-PDSO-G3

5 ohm

1

Not Qualified

.24 W

.45 pF

1.05 us

50 V

e3

30

260

SILICON

100 MHz

BAP63-02,115

NXP Semiconductors

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

SINGLE

S BAND

.32 pF

POSITIVE-INTRINSIC-NEGATIVE

1

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

TIN

R-PDSO-F2

1.5 ohm

Not Qualified

.715 W

.36 pF

.31 us

50 V

e3

30

260

SILICON

100 MHz

BAP63-03,115

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

SINGLE

S BAND

.32 pF

POSITIVE-INTRINSIC-NEGATIVE

1

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

TIN

R-PDSO-G2

1.5 ohm

Not Qualified

.5 W

.4 pF

.31 us

50 V

e3

30

260

SILICON

100 MHz

BAP63-05W,115

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

COMMON CATHODE, 2 ELEMENTS

S BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

2

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

TIN

R-PDSO-G3

1.5 ohm

Not Qualified

.24 W

.4 pF

.31 us

50 V

e3

30

260

SILICON

100 MHz

BAP64-04,215

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

S BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

TIN

R-PDSO-G3

40 ohm

1

Not Qualified

.25 W

.52 pF

HIGH VOLTAGE

1.55 us

175 V

e3

30

260

SILICON

100 MHz

BAP64-05,215

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

COMMON CATHODE, 2 ELEMENTS

S BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

TIN

R-PDSO-G3

40 ohm

1

Not Qualified

.25 W

.52 pF

HIGH VOLTAGE

1.55 us

175 V

e3

30

260

SILICON

100 MHz

BAP65-03,115

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

.9 pF

POSITIVE-INTRINSIC-NEGATIVE

1

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

TIN

R-PDSO-G2

.9 ohm

1

Not Qualified

.5 W

.65 pF

.17 us

30 V

e3

30

260

SILICON

100 MHz

BAT18,215

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

20 V

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

TIN

R-PDSO-G3

.7 ohm

1

Not Qualified

.75 pF

TO-236AB

35 V

e3

30

260

SILICON

100 MHz

BAP70AM,135

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

1.1 V

.25 pF

POSITIVE-INTRINSIC-NEGATIVE

.1 uA

4

50 V

SMALL OUTLINE

Other Diodes

50 V

150 Cel

ATTENUATOR

-65 Cel

TIN

R-PDSO-G6

1.9 ohm

1

Not Qualified

.3 W

LOW DISTORTION

1.25 us

e3

30

260

SILICON

BAP70-04W,115

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

2

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

TIN

R-PDSO-G3

1.9 ohm

1

Not Qualified

.26 W

.6 pF

1.25 us

50 V

e3

30

260

SILICON

100 MHz

BAP70-03,115

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

SINGLE

.25 pF

POSITIVE-INTRINSIC-NEGATIVE

1

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR

-65 Cel

TIN

R-PDSO-G2

1.9 ohm

1

Not Qualified

.5 W

.57 pF

HIGH VOLTAGE

1.25 us

50 V

e3

30

260

SILICON

100 MHz

BAP63LX,315

NXP Semiconductors

PIN DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

SINGLE

S BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

0 V

CHIP CARRIER

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

TIN

R-PBCC-N2

1.5 ohm

Not Qualified

.135 W

.34 pF

.32 us

50 V

e3

SILICON

100 MHz

BAP55L,315

NXP Semiconductors

PIN DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

S BAND

.28 pF

POSITIVE-INTRINSIC-NEGATIVE

1

CHIP CARRIER

ATTENUATOR; SWITCHING

TIN

R-PBCC-N2

.7 ohm

Not Qualified

.5 W

.28 us

e3

SILICON

BAP51LX,315

NXP Semiconductors

PIN DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

500 mA

SINGLE

S BAND

.4 pF

POSITIVE-INTRINSIC-NEGATIVE

1

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

Tin (Sn)

R-PDSO-N2

1.5 ohm

1

Not Qualified

.14 W

.3 pF

.55 us

60 V

e3

30

260

SILICON

100 MHz

BAP51L,315

NXP Semiconductors

PIN DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

S BAND

.4 pF

POSITIVE-INTRINSIC-NEGATIVE

1

CHIP CARRIER

ATTENUATOR; SWITCHING

TIN

R-PBCC-N2

1.5 ohm

Not Qualified

.5 W

.55 us

60 V

e3

SILICON

BAP51-04W,115

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.55 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

150 Cel

-65 Cel

TIN

R-PDSO-G3

2.5 ohm

1

Not Qualified

.24 W

.55 us

e3

260

SILICON

BAP142LX,315

NXP Semiconductors

PIN DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

SINGLE

S BAND

.26 pF

POSITIVE-INTRINSIC-NEGATIVE

1

0 V

CHIP CARRIER

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

Tin (Sn)

R-PBCC-N2

1.3 ohm

1

Not Qualified

.13 W

.25 pF

.11 us

50 V

e3

30

260

SILICON

100 MHz

BAP1321LX,315

NXP Semiconductors

PIN DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

SINGLE

S BAND

.38 pF

POSITIVE-INTRINSIC-NEGATIVE

1

0 V

CHIP CARRIER

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

R-PBCC-N2

1.3 ohm

Not Qualified

.13 W

.32 pF

.48 us

60 V

SILICON

100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.