4 Transient Suppression Devices 19

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

D1213A-02SR-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

150 Cel

-65 Cel

MATTE TIN

R-PDSO-G4

1

UNIDIRECTIONAL

.4 W

HIGH RELIABILITY

10 V

6 V

e3

30

260

SILICON

AEC-Q101

ESD6116

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

1.3 V

AVALANCHE

1

GRID ARRAY

10 V

85 Cel

-30 Cel

TIN SILVER COPPER

S-PBGA-B4

1

UNIDIRECTIONAL

20 V

16 V

e1

260

SILICON

IEC-61000-4-2

CM6116

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

1.3 V

AVALANCHE

1

GRID ARRAY

10 V

85 Cel

-30 Cel

S-PBGA-B4

UNIDIRECTIONAL

20 V

16 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

ESD0P8RFLE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

50 V

150 Cel

-55 Cel

GOLD

R-XBCC-N4

1

UNIDIRECTIONAL

12 V

e4

SILICON

15 V

ESD0P4RFLE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

50 V

150 Cel

-55 Cel

GOLD

R-XBCC-N4

1

UNIDIRECTIONAL

6 V

e4

SILICON

9 V

ESD102U2099ELE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

SQUARE

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

S-PBCC-N4

UNIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

USBULC6-2N4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

4

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

AVALANCHE

1

SMALL OUTLINE

3 V

150 Cel

-40 Cel

R-PDSO-N4

UNIDIRECTIONAL

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

USBULC6-2F7

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

50 W

7.25 V

AVALANCHE

.07 uA

1

3 V

GRID ARRAY

150 Cel

-40 Cel

S-PBGA-B4

UNIDIRECTIONAL

HIGH RELIABILITY

5.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9 V

IEC61000-4-2

TPD2E007YFMRG4

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

SQUARE

UNSPECIFIED

SINGLE

14 V

AVALANCHE

.05 uA

4

CHIP CARRIER

Transient Suppressors

13 V

85 Cel

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

S-XBCC-N4

1

BIDIRECTIONAL

Not Qualified

.27 W

14 V

14 V

e1

NOT SPECIFIED

260

SILICON

IEC-61000-4-2, 4-5

USBULC6-2F3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

60 W

7.5 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

125 Cel

MATTE TIN

R-PBGA-B4

1

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

6 V

e3

SILICON

9 V

IP4085CX4/LF,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

16 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

1 W

20 V

16 V

SILICON

ESDAULC6-3BF2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

7.6 V

AVALANCHE

4

GRID ARRAY

Transient Suppressors

150 Cel

MATTE TIN

R-PBGA-B4

1

BIDIRECTIONAL

Not Qualified

HIGH RELIABILITY, ULTRA LOW CAPACITANCE

6 V

e3

SILICON

9.2 V

USBULC6-3F3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

UNSPECIFIED

SINGLE

50 W

AVALANCHE

.1 uA

1

3 V

GRID ARRAY

3 V

125 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

S-XBGA-B4

UNIDIRECTIONAL

Not Qualified

ULTRA-LOW CAPACITANCE

6 V

e1

30

260

SILICON

IEC-61000-4-2, 4-4

SP0503BAHT

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 3 ELEMENTS

AVALANCHE

3

SMALL OUTLINE

Transient Suppressors

5.5 V

Tin/Lead (Sn/Pb)

R-PDSO-G4

UNIDIRECTIONAL

ANODE

Not Qualified

.225 W

LOW CAPACITANCE

TO-253AA

6.8 V

e0

NOT SPECIFIED

NOT SPECIFIED

SILICON

MAX3202EEBS-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

4

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-PBGA-B4

1

UNIDIRECTIONAL

Not Qualified

.239 W

e0

SILICON

SN65220YZBT

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

UNSPECIFIED

COMPLEX

60 W

AVALANCHE

2

GRID ARRAY

6 V

S-XBGA-B4

1

UNIDIRECTIONAL

Not Qualified

.385 W

LOW CAPACITANCE

6.5 V

30

260

SILICON

8 V

ESDA18-1F2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

700 W

17 V

AVALANCHE

2

GRID ARRAY

Transient Suppressors

16 V

125 Cel

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

16 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

18 V

DUSBULC6-CSP4-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

70 W

AVALANCHE

1

GRID ARRAY

3 V

150 Cel

-55 Cel

TIN SILVER COPPER

S-PBGA-B4

UNIDIRECTIONAL

6 V

e1

260

SILICON

9 V

IEC-61000-4-2

SZPACDN004SR

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.95 V

AVALANCHE

1

SMALL OUTLINE

85 Cel

-40 Cel

TIN

R-PDSO-G3

1

13 V

e3

30

260

SILICON

AEC-Q101, IEC-61000-4-2

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.