YES Transient Suppression Devices 2,400+

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

SMF4L12A-Q

Bourns

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

14 V

AVALANCHE

1 uA

1

12 V

SMALL OUTLINE

12 V

150 Cel

-55 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

13.3 V

e3

SILICON

14.7 V

AEC-Q101

SMF4L43A-Q

Bourns

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

50.3 V

AVALANCHE

1 uA

1

43 V

SMALL OUTLINE

43 V

150 Cel

-55 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

47.8 V

e3

SILICON

52.8 V

AEC-Q101

D20V0S1U2LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

SQUARE

PLASTIC/EPOXY

SINGLE

4400 W

1.2 V

AVALANCHE

.2 uA

1

20 V

CHIP CARRIER

20 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PBCC-N2

1

UNIDIRECTIONAL

.5 W

37 V

22 V

30

260

SILICON

SP3208-01UTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

MO-236

18 V

6.2 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

NUP1128WTT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

31 V

AVALANCHE

.1 uA

1

26.5 V

SMALL OUTLINE

26.5 V

175 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

BIDIRECTIONAL

165 W

55 V

27.5 V

e3

30

260

SILICON

35.5 V

IEC-61000-4-2, 4-4, 4-5; ISO 7637-1, -3

NUP2128WTT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

165 W

31 V

AVALANCHE

.1 uA

2

26.5 V

SMALL OUTLINE

26.5 V

175 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

BIDIRECTIONAL

165 W

55 V

27.5 V

e3

30

260

SILICON

35.5 V

IEC-61000-4-2, 4-4, 4-5; ISO 7637-1, -3

SZNUPH1128HT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

31 V

AVALANCHE

.1 uA

1

26.5 V

SMALL OUTLINE

26.5 V

175 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

1

BIDIRECTIONAL

165 W

55 V

27.5 V

e3

30

260

SILICON

35.5 V

AEC-Q101; IEC-61000-4-2, 4-4, 4-5; ISO 7637-1, -3

D12V0M1U2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

AVALANCHE

1

CHIP CARRIER

12 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

13 V

e3

30

260

SILICON

IEC-61000-4-2, 4-5

D7V0M1U2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

AVALANCHE

1

CHIP CARRIER

7 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

7.5 V

e3

30

260

SILICON

IEC-61000-4-2, 4-5

D7V9H1U2LP1610-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1000 W

AVALANCHE

1

CHIP CARRIER

7.9 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.3 W

8.2 V

e4

30

260

SILICON

9 V

IEC-61000-4-2

DTVS20SP4UR-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

20 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1.5 W

EXCELLENT CLAMPING CAPABILITY

22.2 V

e3

260

SILICON

24.5 V

D12V0S1U3LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

4000 W

14 V

AVALANCHE

.2 uA

1

12 V

SMALL OUTLINE

12 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

.5 W

27.5 V

13.3 V

e4

260

SILICON

14.7 V

IEC-61000-4-2

D18V0S1U3LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

4000 W

21.05 V

AVALANCHE

.2 uA

1

18 V

SMALL OUTLINE

18 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

.5 W

33.3 V

20 V

e4

260

SILICON

22.1 V

IEC-61000-4-2

D20V0S1U3LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

4000 W

23.35 V

AVALANCHE

.2 uA

1

20 V

SMALL OUTLINE

20 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

.5 W

36.4 V

22.2 V

e4

260

SILICON

24.5 V

IEC-61000-4-2

D22V0S1U2LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

SQUARE

PLASTIC/EPOXY

SINGLE

4000 W

AVALANCHE

1

CHIP CARRIER

22 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PBCC-N2

1

UNIDIRECTIONAL

.5 W

24 V

e4

260

SILICON

IEC-61000-4-2

D26V0S1U3LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

4000 W

30.4 V

AVALANCHE

.2 uA

1

26 V

SMALL OUTLINE

26 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

.5 W

50 V

28.9 V

e4

260

SILICON

31.9 V

IEC-61000-4-2

DM6W10A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

11.7 V

AVALANCHE

15 uA

1

10 V

SMALL OUTLINE

10 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

1

UNIDIRECTIONAL

ANODE

6 W

DO-218

17 V

11.1 V

e3

30

260

SILICON

12.3 V

ISO 7637-2; ISO 16750-2

DM6W11A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

12.85 V

AVALANCHE

10 uA

1

11 V

SMALL OUTLINE

11 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

1

UNIDIRECTIONAL

ANODE

6 W

DO-218

18.2 V

12.2 V

e3

30

260

SILICON

13.5 V

ISO 7637-2; ISO 16750-2

DM6W12A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

14 V

AVALANCHE

10 uA

1

12 V

SMALL OUTLINE

12 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

1

UNIDIRECTIONAL

ANODE

6 W

DO-218

19.9 V

13.3 V

e3

30

260

SILICON

14.7 V

ISO 7637-2; ISO 16750-2

DM6W13A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

15.15 V

AVALANCHE

10 uA

1

13 V

SMALL OUTLINE

13 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

1

UNIDIRECTIONAL

ANODE

6 W

DO-218

21.5 V

14.4 V

e3

30

260

SILICON

15.9 V

ISO 7637-2; ISO 16750-2

DM6W14A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

16.4 V

AVALANCHE

10 uA

1

14 V

SMALL OUTLINE

14 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

1

UNIDIRECTIONAL

ANODE

6 W

DO-218

23.2 V

15.6 V

e3

30

260

SILICON

17.2 V

ISO 7637-2; ISO 16750-2

DM6W15A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

16.27 V

AVALANCHE

10 uA

1

15 V

SMALL OUTLINE

15 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

1

UNIDIRECTIONAL

ANODE

6 W

DO-218

24.4 V

16.7 V

e3

30

260

SILICON

18.5 V

ISO 7637-2; ISO 16750-2

DM6W16A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

18.75 V

AVALANCHE

10 uA

1

16 V

SMALL OUTLINE

16 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

1

UNIDIRECTIONAL

ANODE

6 W

DO-218

26 V

17.8 V

e3

30

260

SILICON

19.7 V

ISO 7637-2; ISO 16750-2

DM6W17A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

19.9 V

AVALANCHE

10 uA

1

17 V

SMALL OUTLINE

17 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

1

UNIDIRECTIONAL

ANODE

6 W

DO-218

27.6 V

18.9 V

e3

30

260

SILICON

20.9 V

ISO 7637-2; ISO 16750-2

DM6W18A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

21.05 V

AVALANCHE

10 uA

1

18 V

SMALL OUTLINE

18 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

1

UNIDIRECTIONAL

ANODE

6 W

DO-218

29.2 V

20 V

e3

30

260

SILICON

22.1 V

ISO 7637-2; ISO 16750-2

DM6W20A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

23.35 V

AVALANCHE

10 uA

1

20 V

SMALL OUTLINE

20 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

1

UNIDIRECTIONAL

ANODE

6 W

DO-218

32.4 V

22.2 V

e3

30

260

SILICON

24.5 V

ISO 7637-2; ISO 16750-2

DM6W22A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

25.65 V

AVALANCHE

10 uA

1

22 V

SMALL OUTLINE

22 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

1

UNIDIRECTIONAL

ANODE

6 W

DO-218

35.5 V

24.4 V

e3

30

260

SILICON

26.9 V

ISO 7637-2; ISO 16750-2

DM6W24A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

28.1 V

AVALANCHE

10 uA

1

24 V

SMALL OUTLINE

24 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

1

UNIDIRECTIONAL

ANODE

6 W

DO-218

38.9 V

26.7 V

e3

30

260

SILICON

29.5 V

ISO 7637-2; ISO 16750-2

DM6W26A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

30.4 V

AVALANCHE

10 uA

1

26 V

SMALL OUTLINE

26 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

1

UNIDIRECTIONAL

ANODE

6 W

DO-218

42.1 V

28.9 V

e3

30

260

SILICON

31.9 V

ISO 7637-2; ISO 16750-2

DM6W28A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

32.75 V

AVALANCHE

10 uA

1

28 V

SMALL OUTLINE

28 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

1

UNIDIRECTIONAL

ANODE

6 W

DO-218

45.4 V

31.1 V

e3

30

260

SILICON

34.4 V

ISO 7637-2; ISO 16750-2

DM6W30A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

35.05 V

AVALANCHE

10 uA

1

30 V

SMALL OUTLINE

30 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

1

UNIDIRECTIONAL

ANODE

6 W

DO-218

48.4 V

33.3 V

e3

30

260

SILICON

36.8 V

ISO 7637-2; ISO 16750-2

DM6W33A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

38.65 V

AVALANCHE

10 uA

1

33 V

SMALL OUTLINE

33 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

1

UNIDIRECTIONAL

ANODE

6 W

DO-218

53.3 V

36.7 V

e3

30

260

SILICON

40.6 V

ISO 7637-2; ISO 16750-2

DM6W36A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

42.1 V

AVALANCHE

10 uA

1

36 V

SMALL OUTLINE

36 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

1

UNIDIRECTIONAL

ANODE

6 W

DO-218

58.1 V

40 V

e3

30

260

SILICON

44.2 V

ISO 7637-2; ISO 16750-2

ESDL1531MX4T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.05 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

6.5 V

5.5 V

NOT SPECIFIED

260

SILICON

8.6 V

IEC-61000-4-2, 4-5

DM5W10AQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2800 W

AVALANCHE

1

SMALL OUTLINE

10 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

UNIDIRECTIONAL

ANODE

5 W

HIGH RELIABILITY, LOW POWER LOSS

DO-218AA

11.1 V

e3

260

SILICON

12.3 V

AEC-Q101

DM6W10AQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

3600 W

AVALANCHE

1

SMALL OUTLINE

10 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

UNIDIRECTIONAL

ANODE

6 W

HIGH RELIABILITY, LOW POWER LOSS

DO-218AA

11.1 V

e3

260

SILICON

12.3 V

AEC-Q101

IP4242CZ6,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

R-PBCC-N6

UNIDIRECTIONAL

MO-252

6 V

SILICON

9 V

PESD24VF1BSF,315

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

24 V

125 Cel

-45 Cel

R-PBCC-N2

1

BIDIRECTIONAL

IEC-61643-321

24.5 V

30

260

SILICON

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0F1BSH,315

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

IEC-61643-321

7.2 V

SILICON

11.2 V

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0R1BSF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

6 V

SILICON

IEC-60134

PESD5V0X2UMB,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-65 Cel

R-PBCC-N3

UNIDIRECTIONAL

ANODE

IEC-61643-321

7.5 V

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PTVS12VZ1USKN,315

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2100 W

AVALANCHE

1

CHIP CARRIER

12 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

IEC-61643-321

13.3 V

SILICON

15.4 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PTVS26VU1UPA,147

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

3000 W

AVALANCHE

1

SMALL OUTLINE

26 V

150 Cel

-55 Cel

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

IEC-61643-321

28.9 V

SILICON

31.9 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PTVS7V5Z1USK,315

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2200 W

AVALANCHE

1

CHIP CARRIER

7.5 V

125 Cel

-40 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

CATHODE

IEC-61643-321

8.33 V

30

260

SILICON

9.65 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PUSB2X4Y,125

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

85 Cel

-40 Cel

R-PDSO-G6

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

SILICON

9 V

IEC-60134; IEC-61000-4-2, 4-5

DM6W27Q-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

.99 V

27 V

AVALANCHE

20 uA

1

22 V

SMALL OUTLINE

22 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

UNIDIRECTIONAL

ANODE

6 W

LOW POWER LOSS, PD-CASE, MIL-STD-202

DO-218

40 V

24 V

e3

SILICON

30 V

AEC-Q101; IATF 16949; ISO7637-2; ISO16750-2

NUP4114UCLW1T1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

6.5 V

AVALANCHE

1 uA

5

5.5 V

SMALL OUTLINE

5.5 V

125 Cel

-40 Cel

R-PDSO-G6

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

10 V

5.5 V

10

260

SILICON

IEC-61000-4-2

DM5W27Q-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

3600 W

1 V

27 V

AVALANCHE

10 uA

1

22 V

SMALL OUTLINE

22 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

UNIDIRECTIONAL

ANODE

5 W

LOW POWER LOSS, PD-CASE, MIL-STD-202

DO-218

40 V

24 V

e3

SILICON

30 V

AEC-Q101; IATF 16949; ISO7637-2; ISO16750-2

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.