NO LEAD Transient Suppression Devices 188

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

SP4061-04UTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

SQUARE

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

2.5 V

150 Cel

S-PDSO-N10

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

11.5 V

40

260

SILICON

SP4062-04UTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

SQUARE

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

MATTE TIN

S-PDSO-N10

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

11.5 V

e3

40

260

SILICON

SP3012-04UTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

R-PDSO-N10

UNIDIRECTIONAL

ANODE

Not Qualified

7 V

40

260

SILICON

DESD6V8DLP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

70 W

6.8 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

5.25 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

Not Qualified

.385 W

LOW CAPACITANCE

6.4 V

e4

30

260

SILICON

7.2 V

DESD6V8DLP-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

70 W

6.8 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

5.25 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

Not Qualified

.385 W

LOW CAPACITANCE

6.4 V

e4

30

260

SILICON

7.2 V

ESD5V0H1U-02LS-E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

200 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

125 Cel

-55 Cel

MATTE TIN

R-XBCC-N2

1

UNIDIRECTIONAL

40 V

e3

260

SILICON

AEC-Q101

TPD2E001DRST-NM

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

SINGLE

11 V

AVALANCHE

.001 uA

1

SMALL OUTLINE

Transient Suppressors

5.5 V

85 Cel

-40 Cel

MATTE TIN

S-PDSO-N6

2

UNIDIRECTIONAL

25 V

11 V

e3

30

260

SILICON

IEC-61000-4-2

LXES1UBAB1-007

Murata Manufacturing

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

18 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

17.5 V

85 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

18 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

TPD6V8LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

85 W

6.8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

19 V

6.4 V

e4

30

260

SILICON

7.2 V

SP3012-06UTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

14

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-40 Cel

R-PDSO-N14

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

MO-229

7 V

40

260

SILICON

AEC-Q101

ESD3V3U1U-02LS-E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

125 Cel

-55 Cel

R-XBCC-N2

1

UNIDIRECTIONAL

12 V

6 V

260

SILICON

ESD5V3U1U-02LRH-E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

125 Cel

-55 Cel

R-XBCC-N2

1

UNIDIRECTIONAL

15 V

6 V

260

SILICON

ESD5V3U1U-02LS-E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

125 Cel

-55 Cel

R-XBCC-N2

1

UNIDIRECTIONAL

15 V

6 V

260

SILICON

ESD8V0L1B-02LRH-E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

14 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

26 V

8.5 V

260

SILICON

ESD8V0L1B-02LRH-E6433

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

14 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

26 V

8.5 V

260

SILICON

SP0524PUTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

SMALL OUTLINE

5 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PDSO-N10

1

UNIDIRECTIONAL

LOW CAPACITANCE, ULTRA LOW CAPACITANCE

MO-229

e4

10

260

SILICON

AEC-Q101; IEC-61000-4-5

LXES15AAA1-117

Murata Manufacturing

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

SINGLE

AVALANCHE

1

SMALL OUTLINE

85 Cel

-40 Cel

R-CDSO-N2

BIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD5V3U4UHDMIE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

CHIP CARRIER

5.3 V

125 Cel

-40 Cel

GOLD

R-PBCC-N9

1

UNIDIRECTIONAL

ANODE

6 V

e4

SILICON

TPD2E007YFMTG4

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

YES

SQUARE

UNSPECIFIED

14 V

AVALANCHE

.05 uA

Transient Suppressors

13 V

85 Cel

-40 Cel

TIN SILVER COPPER

S-XBGA-N4

1

BIDIRECTIONAL

14 V

e1

30

260

SILICON

ESD5382MUT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

14.2 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3 V

150 Cel

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

1

UNIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

22 V

14.2 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4

ESD207B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

3.65 V

e4

SILICON

ESD0P8RFLE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

50 V

150 Cel

-55 Cel

GOLD

R-XBCC-N4

1

UNIDIRECTIONAL

12 V

e4

SILICON

15 V

ESD5V3L1U02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

125 Cel

-55 Cel

R-XBCC-N2

UNIDIRECTIONAL

10 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD5V3S1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

80 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

125 Cel

-55 Cel

R-XBCC-N2

BIDIRECTIONAL

11 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD8V0R1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

17 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

14 V

150 Cel

-55 Cel

R-XBCC-N2

BIDIRECTIONAL

23 V

8.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

14 V

AEC-Q101

ESD8V0R1B02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

17 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

14 V

150 Cel

-55 Cel

R-XBCC-N2

BIDIRECTIONAL

23 V

8.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

14 V

AEC-Q101

ESD0P2RF02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD0P2RF02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD0P4RFLE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

50 V

150 Cel

-55 Cel

GOLD

R-XBCC-N4

1

UNIDIRECTIONAL

6 V

e4

SILICON

9 V

ESD102U2099ELE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

SQUARE

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

S-PBCC-N4

UNIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD102U405LE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

750 W

AVALANCHE

4

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

GOLD

R-PBCC-N5

1

UNIDIRECTIONAL

e4

SILICON

7.4 V

ESD110B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

58 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

18.5 V

125 Cel

-40 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

44 V

e4

SILICON

29 V

ESD18VU1B02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

18.5 V

85 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

SILICON

ESD205B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

30 W

8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.5 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

8.5 V

e4

SILICON

ESD206B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

6 V

e4

SILICON

10 V

ESD3V3S1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

SILICON

ESD3V3U4ULCE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

9

YES

RECTANGULAR

UNSPECIFIED

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-40 Cel

GOLD

R-XBCC-N9

1

UNIDIRECTIONAL

11 V

e4

SILICON

ESD3V3XU1USE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD5V3S1B02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

26 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD5V5S1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

150 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

BIDIRECTIONAL

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

10 V

ESD8V0L2B03LE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

8.5 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

14 V

125 Cel

-55 Cel

GOLD

R-XBCC-N3

1

BIDIRECTIONAL

26 V

8.5 V

e4

SILICON

AEC-Q101

ESD112B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

7 V

e4

SILICON

SP3012-03UTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

125 Cel

-40 Cel

MATTE TIN

R-PDSO-N6

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

MO-229

e3

SILICON

IEC-61000-4-2, 4-4, 4-5

USBULC6-2N4

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

4

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

AVALANCHE

1

SMALL OUTLINE

3 V

150 Cel

-40 Cel

R-PDSO-N4

UNIDIRECTIONAL

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

CM1771-5006YL

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

UPPER

NO LEAD

1

YES

RECTANGULAR

UNSPECIFIED

COMMON ANODE, 2 ELEMENTS

100 V

AVALANCHE

2

UNCASED CHIP

Transient Suppressors

R-XUUC-N1

UNIDIRECTIONAL

ANODE

Not Qualified

90 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

110 V

ESD105B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.5 V

125 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

22 V

SILICON

14 V

ESD300B102LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

260 W

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

e4

SILICON

SP3002-04UTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

6 V

150 Cel

S-PDSO-N6

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

13 V

40

260

SILICON

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.