BOTTOM Transient Suppression Devices 134

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

ESDALC6V1-1BT2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

100 W

8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-XBCC-N2

3

BIDIRECTIONAL

Not Qualified

6.1 V

e4

30

260

SILICON

8 V

ESDAVLC6V1-1BM2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

3

BIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

6.1 V

e4

30

260

SILICON

ESDAVLC6V1-1BT2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

6.1 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

125 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PBCC-N2

3

BIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

6.1 V

e4

30

260

SILICON

ESDAULC6-3BF2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

7.6 V

AVALANCHE

4

GRID ARRAY

Transient Suppressors

150 Cel

MATTE TIN

R-PBGA-B4

1

BIDIRECTIONAL

Not Qualified

HIGH RELIABILITY, ULTRA LOW CAPACITANCE

6 V

e3

SILICON

9.2 V

ESDAXLC6-1BU2K

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

.07 uA

1

3 V

CHIP CARRIER

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

19 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC61000-4-2

USBULC6-3F3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

UNSPECIFIED

SINGLE

50 W

AVALANCHE

.1 uA

1

3 V

GRID ARRAY

3 V

125 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

S-XBGA-B4

UNIDIRECTIONAL

Not Qualified

ULTRA-LOW CAPACITANCE

6 V

e1

30

260

SILICON

IEC-61000-4-2, 4-4

ESDA14V2-1BF3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

50 W

16.1 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

12 V

125 Cel

-40 Cel

Matte Tin (Sn)

R-XBGA-B2

BIDIRECTIONAL

Not Qualified

14.2 V

e3

30

260

SILICON

18 V

SP0508BACT

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

AVALANCHE

8

GRID ARRAY

Transient Suppressors

5.5 V

TIN LEAD

R-PBGA-B10

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

6.8 V

e0

SILICON

ESD3V3U1U-02LRH-E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

MATTE TIN

R-XBCC-N2

1

UNIDIRECTIONAL

12 V

5 V

e3

260

SILICON

MAX3202EEBS-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

4

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-PBGA-B4

1

UNIDIRECTIONAL

Not Qualified

.239 W

e0

SILICON

MAX3203EEBT-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

6

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN LEAD

R-PBGA-B6

1

UNIDIRECTIONAL

Not Qualified

.273 W

e0

SILICON

MAX3204EEBT-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

8

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN LEAD

R-PBGA-B6

1

UNIDIRECTIONAL

Not Qualified

.308 W

e0

SILICON

ESD7461N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

16.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

16 V

150 Cel

-55 Cel

NICKEL GOLD PALLADIUM

R-PBCC-N2

1

BIDIRECTIONAL

.3 W

39 V

16.5 V

30

260

SILICON

IEC-61000-4-2, 4-4, 4-5

SN65220YZBT

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

UNSPECIFIED

COMPLEX

60 W

AVALANCHE

2

GRID ARRAY

6 V

S-XBGA-B4

1

UNIDIRECTIONAL

Not Qualified

.385 W

LOW CAPACITANCE

6.5 V

30

260

SILICON

8 V

ESDA18-1F2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

700 W

17 V

AVALANCHE

2

GRID ARRAY

Transient Suppressors

16 V

125 Cel

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

16 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

18 V

ESDA14V2-4BF3

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

5

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

50 W

16.1 V

AVALANCHE

5

GRID ARRAY

Transient Suppressors

12 V

125 Cel

S-PBGA-B5

BIDIRECTIONAL

Not Qualified

14.2 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

18 V

ESDA14V2-4BF2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

5

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

50 W

16.1 V

AVALANCHE

4

GRID ARRAY

Transient Suppressors

S-PBGA-B5

BIDIRECTIONAL

Not Qualified

14.2 V

40

260

SILICON

18 V

ESDA6V1-5T6

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

35 W

6.65 V

AVALANCHE

5

CHIP CARRIER

Transient Suppressors

125 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

6.1 V

e4

30

260

SILICON

7.2 V

ESDA7P60-1U1M

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

700 W

6.8 V

AVALANCHE

.2 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

11.6 V

6.4 V

SILICON

7.2 V

IEC-61000-4-2

ESDAVLC12-1BV2

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

10.5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2

SP3022-01WTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 W

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

6.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9 V

IEC-61000-4-2, 4-4, 4-5

BGF113E6328XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

8

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

85 Cel

-40 Cel

S-PBGA-B8

UNIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

DUSBULC6-CSP4-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

70 W

AVALANCHE

1

GRID ARRAY

3 V

150 Cel

-55 Cel

TIN SILVER COPPER

S-PBGA-B4

UNIDIRECTIONAL

6 V

e1

260

SILICON

9 V

IEC-61000-4-2

SP1013-01WTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

SP1014-01WTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

SP1021-01WTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

6 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

D5V0L1B2DLP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

84 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

6 V

e4

260

SILICON

8 V

ESD5111PFCT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5 V

AVALANCHE

.1 uA

1

3.3 V

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

6.5 V

3.68 V

30

260

SILICON

6.5 V

IEC-61000-4-2

SPHV12-01KTG-C

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

200 W

AVALANCHE

1

CHIP CARRIER

12 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

MO-236

13.3 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

SPHV15-01KTG-C

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

200 W

AVALANCHE

1

CHIP CARRIER

15 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

MO-236

16.7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

SPHV24-01KTG-C

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

200 W

AVALANCHE

1

CHIP CARRIER

24 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

MO-236

26.7 V

40

260

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

SPHV36-01KTG-C

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

200 W

AVALANCHE

1

CHIP CARRIER

36 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

MO-236

40 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

ESDSLC5V0LB-TP-HF

Micro Commercial Components

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

80 W

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

e3

SILICON

9 V

IEC-61000-4-2, 4-4, 4-5

SP1009-01WTG

Littelfuse

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

6 V

85 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9.5 V

IEC-61000-4-2, 4-4, 4-5

AQ1026-01UTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.8 V

AVALANCHE

.5 uA

1

5 V

CHIP CARRIER

6 V

150 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

15 pF

MO-236

13.4 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

DESD5V0V1BCSP-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

20 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD

R-XBCC-N2

BIDIRECTIONAL

.25 W

6 V

e4

260

SILICON

10 V

D3V3Q1B2DLP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

NICKEL GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

3.8 V

e4

260

SILICON

6.5 V

IEC-61000-4-2

DESD5V0V1BDLP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

6 V

e4

260

SILICON

10 V

IEC-61000-4-2

SP1043-01WTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

6 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

LOW CAPACITANCE

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

SP3145-01WTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.36 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

LOW CAPACITANCE

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

PESD5V0C1USF/KYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-40 Cel

R-PBCC-N2

1

UNIDIRECTIONAL

IEC-61643-321

5.5 V

30

260

SILICON

IEC-60134; IEC-61000-4-2, 4-5

DT1240-02LP10-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

55 W

AVALANCHE

2

CHIP CARRIER

5.5 V

85 Cel

-55 Cel

NICKEL GOLD

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

.5 W

PD-NOM

6 V

e4

30

260

SILICON

IEC-61000-4-2; IEC-61000-4-5

DT2042-01CSP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

50 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD

R-XBCC-N2

1

UNIDIRECTIONAL

.25 W

6 V

e4

30

260

SILICON

10 V

IEC-61000-4-2; IEC-61000-4-4

PTVS12VZ1USKNYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2100 W

AVALANCHE

1

CHIP CARRIER

12 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

CATHODE

IEC-61643-321

13.3 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

15.4 V

IEC-60134; IEC-61000-4-2, 4-5; IEC-61643-321

PESD5V0F1BSHYL

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

IEC-61643-321

7.2 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

11.2 V

IEC-60134; IEC-61000-4-2; IEC-61000-4-5

ESD8V0R1B-02LRHE6433

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

14 V

R-XBCC-N2

BIDIRECTIONAL

8.5 V

SILICON

14 V

NSPU3051N2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

5.5 V

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

9.5 V

5.7 V

e4

30

260

SILICON

9.1 V

IEC-61000-4-2, 4-5

D15V0H1U2LP16-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

SQUARE

PLASTIC/EPOXY

SINGLE

2250 W

AVALANCHE

1

CHIP CARRIER

15 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

S-PBCC-N2

1

UNIDIRECTIONAL

.3 W

15.5 V

e4

260

SILICON

IEC-61000-4-2

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.