DUAL Transient Suppression Devices 2,252

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

SMPC51ANHM3/H

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1500 W

59.7 V

AVALANCHE

1 uA

1

51 V

SMALL OUTLINE

51 V

150 Cel

-55 Cel

Matte Tin (Sn)

R-PDSO-F3

1

UNIDIRECTIONAL

CATHODE

1.25 W

EXCELLENT CLAMPING CAPABILITY

TO-277A

82.4 V

56.7 V

e3

30

260

SILICON

62.7 V

AEC-Q101

SMBJ100AQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

SMALL OUTLINE

100 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

UNIDIRECTIONAL

5 W

HIGH RELIABILITY, EXCELLENT CLAMPING CAPABILITY

111 V

e3

260

SILICON

128 V

AEC-Q101

SMBJ100CAQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

SMALL OUTLINE

100 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

BIDIRECTIONAL

5 W

HIGH RELIABILITY, EXCELLENT CLAMPING CAPABILITY

111 V

e3

260

SILICON

128 V

AEC-Q101

SMBJ12CAQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

SMALL OUTLINE

12 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

BIDIRECTIONAL

5 W

HIGH RELIABILITY, EXCELLENT CLAMPING CAPABILITY

13.3 V

e3

260

SILICON

15.3 V

AEC-Q101

SMBJ51AQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

SMALL OUTLINE

51 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

UNIDIRECTIONAL

5 W

HIGH RELIABILITY, EXCELLENT CLAMPING CAPABILITY

DO-214AA

56.7 V

e3

260

SILICON

65.2 V

AEC-Q101

SMF4L12A-Q

Bourns

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

14 V

AVALANCHE

1 uA

1

12 V

SMALL OUTLINE

12 V

150 Cel

-55 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

13.3 V

e3

SILICON

14.7 V

AEC-Q101

SMF4L43A-Q

Bourns

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

50.3 V

AVALANCHE

1 uA

1

43 V

SMALL OUTLINE

43 V

150 Cel

-55 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

47.8 V

e3

SILICON

52.8 V

AEC-Q101

D20V0S1U2LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

SQUARE

PLASTIC/EPOXY

SINGLE

4400 W

1.2 V

AVALANCHE

.2 uA

1

20 V

CHIP CARRIER

20 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PBCC-N2

1

UNIDIRECTIONAL

.5 W

37 V

22 V

30

260

SILICON

NUP1128WTT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

31 V

AVALANCHE

.1 uA

1

26.5 V

SMALL OUTLINE

26.5 V

175 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

BIDIRECTIONAL

165 W

55 V

27.5 V

e3

30

260

SILICON

35.5 V

IEC-61000-4-2, 4-4, 4-5; ISO 7637-1, -3

NUP2128WTT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

165 W

31 V

AVALANCHE

.1 uA

2

26.5 V

SMALL OUTLINE

26.5 V

175 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

BIDIRECTIONAL

165 W

55 V

27.5 V

e3

30

260

SILICON

35.5 V

IEC-61000-4-2, 4-4, 4-5; ISO 7637-1, -3

SZNUPH1128HT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

31 V

AVALANCHE

.1 uA

1

26.5 V

SMALL OUTLINE

26.5 V

175 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

1

BIDIRECTIONAL

165 W

55 V

27.5 V

e3

30

260

SILICON

35.5 V

AEC-Q101; IEC-61000-4-2, 4-4, 4-5; ISO 7637-1, -3

DTVS20SP4UR-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

20 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1.5 W

EXCELLENT CLAMPING CAPABILITY

22.2 V

e3

260

SILICON

24.5 V

D12V0S1U3LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

4000 W

14 V

AVALANCHE

.2 uA

1

12 V

SMALL OUTLINE

12 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

.5 W

27.5 V

13.3 V

e4

260

SILICON

14.7 V

IEC-61000-4-2

D18V0S1U3LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

4000 W

21.05 V

AVALANCHE

.2 uA

1

18 V

SMALL OUTLINE

18 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

.5 W

33.3 V

20 V

e4

260

SILICON

22.1 V

IEC-61000-4-2

D20V0S1U3LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

4000 W

23.35 V

AVALANCHE

.2 uA

1

20 V

SMALL OUTLINE

20 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

.5 W

36.4 V

22.2 V

e4

260

SILICON

24.5 V

IEC-61000-4-2

D26V0S1U3LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

4000 W

30.4 V

AVALANCHE

.2 uA

1

26 V

SMALL OUTLINE

26 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

.5 W

50 V

28.9 V

e4

260

SILICON

31.9 V

IEC-61000-4-2

PTVS26VU1UPA,147

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

3000 W

AVALANCHE

1

SMALL OUTLINE

26 V

150 Cel

-55 Cel

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

IEC-61643-321

28.9 V

SILICON

31.9 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PUSB2X4Y,125

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

85 Cel

-40 Cel

R-PDSO-G6

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

SILICON

9 V

IEC-60134; IEC-61000-4-2, 4-5

NUP4114UCLW1T1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

6.5 V

AVALANCHE

1 uA

5

5.5 V

SMALL OUTLINE

5.5 V

125 Cel

-40 Cel

R-PDSO-G6

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

10 V

5.5 V

10

260

SILICON

IEC-61000-4-2

DT1240-04LPQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

60 W

AVALANCHE

.5 uA

1

5 V

SMALL OUTLINE

5.5 V

85 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N10

UNIDIRECTIONAL

.35 W

MIL-STD-202

11 V

6 V

e4

260

SILICON

AEC-Q101; IATF 16949; IEC-61000-4-2, 4-5

SZNSP8818MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

1.1 V

3.5 V

AVALANCHE

.5 uA

8

3 V

SMALL OUTLINE

3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N10

1

UNIDIRECTIONAL

LOW CAPACITANCE

15 V

3.2 V

260

SILICON

5 V

AEC-Q101; IEC-61000-4-2, 4-5

SZNSP8814MUTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

1.1 V

3.5 V

AVALANCHE

.5 uA

4

3 V

SMALL OUTLINE

3 V

125 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N8

1

UNIDIRECTIONAL

LOW CAPACITANCE

15 V

3.2 V

260

SILICON

5 V

AEC-Q101; IEC-61000-4-2, 4-5

NSPM6201MUTBG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

20 V

SMALL OUTLINE

20 V

150 Cel

-65 Cel

S-PDSO-N3

BIDIRECTIONAL

39 V

21 V

SILICON

27 V

IEC-61000-4-2, 4-5

P4SMA180A-Q

Bourns

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

3.5 V

180 V

AVALANCHE

1 uA

1

154 V

SMALL OUTLINE

154 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

UNIDIRECTIONAL

DO-214AC

171 V

e3

30

260

SILICON

189 V

AEC-Q101

P4SMA200A-Q

Bourns

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

3.5 V

200 V

AVALANCHE

1 uA

1

171 V

SMALL OUTLINE

171 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

UNIDIRECTIONAL

DO-214AC

190 V

e3

30

260

SILICON

210 V

AEC-Q101

SMBJ70AQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

83.65 V

AVALANCHE

5 uA

1

70 V

SMALL OUTLINE

70 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

UNIDIRECTIONAL

5 W

EXCELLENT CLAMPING CAPABILITY

DO-214AA

113 V

77.8 V

e3

260

SILICON

89.5 V

AEC-Q101; UL RECOGNIZED

SMAJ70AQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

3.5 V

81.9 V

AVALANCHE

5 uA

1

70 V

SMALL OUTLINE

70 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

113 V

77.8 V

e3

30

260

SILICON

86 V

AEC-Q101; IATF 16949

SMAJ43AQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

3.5 V

50.3 V

AVALANCHE

5 uA

1

43 V

SMALL OUTLINE

43 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

69.4 V

47.8 V

e3

30

260

SILICON

52.8 V

AEC-Q101; IATF 16949

SMAJ13AQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

3.5 V

15.15 V

AVALANCHE

5 uA

1

13 V

SMALL OUTLINE

13 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

21.5 V

14.4 V

e3

30

260

SILICON

15.9 V

AEC-Q101; IATF 16949

SMAJ13CAQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

15.15 V

AVALANCHE

5 uA

1

13 V

SMALL OUTLINE

13 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

BIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

21.5 V

14.4 V

e3

30

260

SILICON

15.9 V

AEC-Q101; IATF 16949

SMAJ70CAQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

81.9 V

AVALANCHE

5 uA

1

70 V

SMALL OUTLINE

70 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

BIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

113 V

77.8 V

e3

30

260

SILICON

86 V

AEC-Q101; IATF 16949

SMAJ78AQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

3.5 V

91.25 V

AVALANCHE

5 uA

1

78 V

SMALL OUTLINE

78 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

126 V

86.7 V

e3

30

260

SILICON

95.8 V

AEC-Q101; IATF 16949

SMAJ78CAQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

91.25 V

AVALANCHE

5 uA

1

78 V

SMALL OUTLINE

78 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

BIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

126 V

86.7 V

e3

30

260

SILICON

95.8 V

AEC-Q101; IATF 16949

SZMMBZ27VCWT3G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

1.1 V

27 V

ZENER

.05 uA

2

22 V

SMALL OUTLINE

22 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.2 W

38 V

25.65 V

SILICON

28.35 V

AEC-Q101

P6SMBJ51AS_R1_00001

Panjit International

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

59.7 V

AVALANCHE

1 uA

1

51 V

SMALL OUTLINE

51 V

150 Cel

-55 Cel

R-PDSO-C2

UNIDIRECTIONAL

5 W

UL RECOGNIZED

82.4 V

56.7 V

SILICON

62.7 V

IEC-61000-4-2; IEC-61249; MIL-STD-750

D12V0H1U2WSQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

14.525 V

AVALANCHE

.1 uA

1

12 V

SMALL OUTLINE

12 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

UNIDIRECTIONAL

.2 W

24 V

13.3 V

e3

260

SILICON

15.75 V

AEC-Q101; IATF 16949

P6SMAJ24ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

28.7 V

AVALANCHE

1 uA

1

24 V

SMALL OUTLINE

24 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

38.9 V

26.7 V

e3

30

260

SILICON

30.7 V

AEC-Q101; IATF 16949

P6SMAJ45ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

53.75 V

AVALANCHE

1 uA

1

45 V

SMALL OUTLINE

45 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

72.7 V

50 V

e3

30

260

SILICON

57.5 V

AEC-Q101; IATF 16949

P6SMAJ85ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

101.3 V

AVALANCHE

1 uA

1

85 V

SMALL OUTLINE

85 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

137 V

94.4 V

e3

30

260

SILICON

108.2 V

AEC-Q101; IATF 16949

P6SMAJ20ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

23.85 V

AVALANCHE

1 uA

1

20 V

SMALL OUTLINE

20 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

32.4 V

22.2 V

e3

30

260

SILICON

25.5 V

AEC-Q101; IATF 16949

P6SMAJ22ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

26.2 V

AVALANCHE

1 uA

1

22 V

SMALL OUTLINE

22 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

35.5 V

24.4 V

e3

30

260

SILICON

28 V

AEC-Q101; IATF 16949

P6SMAJ28ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

33.45 V

AVALANCHE

1 uA

1

28 V

SMALL OUTLINE

28 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

45.4 V

31.1 V

e3

30

260

SILICON

35.8 V

AEC-Q101; IATF 16949

P6SMAJ30ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

35.8 V

AVALANCHE

1 uA

1

30 V

SMALL OUTLINE

30 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

48.4 V

33.3 V

e3

30

260

SILICON

38.3 V

AEC-Q101; IATF 16949

P6SMAJ33ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

39.45 V

AVALANCHE

1 uA

1

33 V

SMALL OUTLINE

33 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

53.3 V

36.7 V

e3

30

260

SILICON

42.2 V

AEC-Q101; IATF 16949

P6SMAJ36ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

43 V

AVALANCHE

1 uA

1

36 V

SMALL OUTLINE

36 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

58.1 V

40 V

e3

30

260

SILICON

46 V

AEC-Q101; IATF 16949

P6SMAJ43ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

51.35 V

AVALANCHE

1 uA

1

43 V

SMALL OUTLINE

43 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

69.4 V

47.8 V

e3

30

260

SILICON

54.9 V

AEC-Q101; IATF 16949

P6SMAJ48ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

57.3 V

AVALANCHE

1 uA

1

48 V

SMALL OUTLINE

48 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

77.4 V

53.3 V

e3

30

260

SILICON

61.3 V

AEC-Q101; IATF 16949

P6SMAJ58ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

69.5 V

AVALANCHE

1 uA

1

58 V

SMALL OUTLINE

58 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

93.6 V

64.4 V

e3

30

260

SILICON

74.6 V

AEC-Q101; IATF 16949

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.