Diodes Incorporated Transient Suppression Devices 549

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

SMAJ13CAQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

15.15 V

AVALANCHE

5 uA

1

13 V

SMALL OUTLINE

13 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

BIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

21.5 V

14.4 V

e3

30

260

SILICON

15.9 V

AEC-Q101; IATF 16949

SMAJ70CAQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

81.9 V

AVALANCHE

5 uA

1

70 V

SMALL OUTLINE

70 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

BIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

113 V

77.8 V

e3

30

260

SILICON

86 V

AEC-Q101; IATF 16949

SMAJ78AQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

3.5 V

91.25 V

AVALANCHE

5 uA

1

78 V

SMALL OUTLINE

78 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

126 V

86.7 V

e3

30

260

SILICON

95.8 V

AEC-Q101; IATF 16949

SMAJ78CAQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

91.25 V

AVALANCHE

5 uA

1

78 V

SMALL OUTLINE

78 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

BIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

126 V

86.7 V

e3

30

260

SILICON

95.8 V

AEC-Q101; IATF 16949

DESD5V0U1BLQ-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

21.6 W

7 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

7.2 V

5.5 V

e4

260

SILICON

9.5 V

IEC-61000-4-2,4-5

D12V0H1U2WSQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

14.525 V

AVALANCHE

.1 uA

1

12 V

SMALL OUTLINE

12 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

UNIDIRECTIONAL

.2 W

24 V

13.3 V

e3

260

SILICON

15.75 V

AEC-Q101; IATF 16949

P6SMAJ24ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

28.7 V

AVALANCHE

1 uA

1

24 V

SMALL OUTLINE

24 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

38.9 V

26.7 V

e3

30

260

SILICON

30.7 V

AEC-Q101; IATF 16949

P6SMAJ45ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

53.75 V

AVALANCHE

1 uA

1

45 V

SMALL OUTLINE

45 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

72.7 V

50 V

e3

30

260

SILICON

57.5 V

AEC-Q101; IATF 16949

P6SMAJ85ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

101.3 V

AVALANCHE

1 uA

1

85 V

SMALL OUTLINE

85 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

137 V

94.4 V

e3

30

260

SILICON

108.2 V

AEC-Q101; IATF 16949

P6SMAJ20ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

23.85 V

AVALANCHE

1 uA

1

20 V

SMALL OUTLINE

20 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

32.4 V

22.2 V

e3

30

260

SILICON

25.5 V

AEC-Q101; IATF 16949

P6SMAJ22ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

26.2 V

AVALANCHE

1 uA

1

22 V

SMALL OUTLINE

22 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

35.5 V

24.4 V

e3

30

260

SILICON

28 V

AEC-Q101; IATF 16949

P6SMAJ28ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

33.45 V

AVALANCHE

1 uA

1

28 V

SMALL OUTLINE

28 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

45.4 V

31.1 V

e3

30

260

SILICON

35.8 V

AEC-Q101; IATF 16949

P6SMAJ30ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

35.8 V

AVALANCHE

1 uA

1

30 V

SMALL OUTLINE

30 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

48.4 V

33.3 V

e3

30

260

SILICON

38.3 V

AEC-Q101; IATF 16949

P6SMAJ33ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

39.45 V

AVALANCHE

1 uA

1

33 V

SMALL OUTLINE

33 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

53.3 V

36.7 V

e3

30

260

SILICON

42.2 V

AEC-Q101; IATF 16949

P6SMAJ36ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

43 V

AVALANCHE

1 uA

1

36 V

SMALL OUTLINE

36 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

58.1 V

40 V

e3

30

260

SILICON

46 V

AEC-Q101; IATF 16949

P6SMAJ43ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

51.35 V

AVALANCHE

1 uA

1

43 V

SMALL OUTLINE

43 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

69.4 V

47.8 V

e3

30

260

SILICON

54.9 V

AEC-Q101; IATF 16949

P6SMAJ48ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

57.3 V

AVALANCHE

1 uA

1

48 V

SMALL OUTLINE

48 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

77.4 V

53.3 V

e3

30

260

SILICON

61.3 V

AEC-Q101; IATF 16949

P6SMAJ58ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

69.5 V

AVALANCHE

1 uA

1

58 V

SMALL OUTLINE

58 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

93.6 V

64.4 V

e3

30

260

SILICON

74.6 V

AEC-Q101; IATF 16949

P6SMAJ64ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

76.45 V

AVALANCHE

1 uA

1

64 V

SMALL OUTLINE

64 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

103 V

71.1 V

e3

30

260

SILICON

81.8 V

AEC-Q101; IATF 16949

P6SMAJ11ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

13.3 V

AVALANCHE

1 uA

1

11 V

SMALL OUTLINE

11 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

18.2 V

12.2 V

e3

30

260

SILICON

14.4 V

AEC-Q101; IATF 16949

P6SMAJ15ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

17.95 V

AVALANCHE

1 uA

1

15 V

SMALL OUTLINE

15 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

24.4 V

16.7 V

e3

30

260

SILICON

19.2 V

AEC-Q101; IATF 16949

P6SMAJ16ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

19.15 V

AVALANCHE

1 uA

1

16 V

SMALL OUTLINE

16 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

26 V

17.8 V

e3

30

260

SILICON

20.5 V

AEC-Q101; IATF 16949

P6SMAJ54ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

64.5 V

AVALANCHE

1 uA

1

54 V

SMALL OUTLINE

54 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

87.1 V

60 V

e3

30

260

SILICON

69 V

AEC-Q101; IATF 16949

P6SMAJ60ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

71.7 V

AVALANCHE

1 uA

1

60 V

SMALL OUTLINE

60 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

96.8 V

66.7 V

e3

30

260

SILICON

76.7 V

AEC-Q101; IATF 16949

P6SMAJ75ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

89.55 V

AVALANCHE

1 uA

1

75 V

SMALL OUTLINE

75 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

121 V

83.3 V

e3

30

260

SILICON

95.8 V

AEC-Q101; IATF 16949

P6SMAJ10ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

11.95 V

AVALANCHE

5 uA

1

10 V

SMALL OUTLINE

10 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

17 V

11.1 V

e3

30

260

SILICON

12.8 V

AEC-Q101; IATF 16949

P6SMAJ12ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

14.3 V

AVALANCHE

1 uA

1

12 V

SMALL OUTLINE

12 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

19.9 V

13.3 V

e3

30

260

SILICON

15.3 V

AEC-Q101; IATF 16949

P6SMAJ17ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

20.3 V

AVALANCHE

1 uA

1

17 V

SMALL OUTLINE

17 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

27.6 V

18.9 V

e3

30

260

SILICON

21.7 V

AEC-Q101; IATF 16949

P6SMAJ18ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

21.65 V

AVALANCHE

1 uA

1

18 V

SMALL OUTLINE

18 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

29.2 V

20 V

e3

30

260

SILICON

23.3 V

AEC-Q101; IATF 16949

P6SMAJ26ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

31.05 V

AVALANCHE

1 uA

1

26 V

SMALL OUTLINE

26 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

42.1 V

28.9 V

e3

30

260

SILICON

33.2 V

AEC-Q101; IATF 16949

P6SMAJ40ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

47.75 V

AVALANCHE

1 uA

1

40 V

SMALL OUTLINE

40 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

64.5 V

44.4 V

e3

30

260

SILICON

51.1 V

AEC-Q101; IATF 16949

P6SMAJ51ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

60.95 V

AVALANCHE

1 uA

1

51 V

SMALL OUTLINE

51 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

82.4 V

56.7 V

e3

30

260

SILICON

65.2 V

AEC-Q101; IATF 16949

P6SMAJ70ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

83.65 V

AVALANCHE

1 uA

1

70 V

SMALL OUTLINE

70 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

113 V

77.8 V

e3

30

260

SILICON

89.5 V

AEC-Q101; IATF 16949

P6SMAJ78ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

93.2 V

AVALANCHE

1 uA

1

78 V

SMALL OUTLINE

78 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

126 V

86.7 V

e3

30

260

SILICON

99.7 V

AEC-Q101; IATF 16949

P6SMAJ14ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

3.5 V

16.75 V

AVALANCHE

1 uA

1

14 V

SMALL OUTLINE

14 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

23.2 V

15.6 V

e3

30

260

SILICON

17.9 V

AEC-Q101; IATF 16949

SMAJ10CAQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

11.7 V

AVALANCHE

10 uA

1

10 V

SMALL OUTLINE

10 V

150 Cel

-55 Cel

R-PDSO-C2

BIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

17 V

11.1 V

SILICON

12.3 V

AEC-Q101; IATF 16949

D20V0M2U3LP4-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

300 W

22.5 V

AVALANCHE

.1 uA

2

20 V

CHIP CARRIER

20 V

150 Cel

-55 Cel

R-PBCC-N3

UNIDIRECTIONAL

ANODE

.25 W

43 V

21 V

SILICON

24 V

IEC-61000-4-2

DESD3V3Z1BCSFQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

25 W

7 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

R-PBCC-N2

BIDIRECTIONAL

.25 W

11.5 V

5 V

SILICON

9 V

AEC-Q101; IATF 16949; IEC-61000-4-2

D7V5S1U3LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

4000 W

8.77 V

AVALANCHE

1 uA

1

7.5 V

SMALL OUTLINE

7.5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

.5 W

18.5 V

8.33 V

e4

260

SILICON

9.21 V

IEC-61000-4-2

D10V0S1U3LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

4000 W

11.95 V

AVALANCHE

.5 uA

1

10 V

SMALL OUTLINE

10 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

.5 W

23.2 V

11.1 V

e4

260

SILICON

12.8 V

IEC-61000-4-2

DESD24VS5U6SOQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

225 W

27 V

AVALANCHE

.1 uA

5

24 V

SMALL OUTLINE

24 V

150 Cel

-65 Cel

MATTE TIN

R-PDSO-G6

UNIDIRECTIONAL

.3 W

45 V

25.5 V

e3

260

SILICON

29 V

AEC-Q101; IATF 16949; IEC-61000-4-2; MIL-STD-202

DESD0V8Z1BCSF-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

15 W

AVALANCHE

1 uA

1

.8 V

CHIP CARRIER

.8 V

150 Cel

-65 Cel

NICKEL GOLD

R-XBCC-N2

BIDIRECTIONAL

.25 W

4 V

1 V

e4

260

SILICON

IEC-61000-4-2; MIL-STD-202

DESD3V3XA1BCSF-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

27.5 W

7 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

NICKEL GOLD

R-XBCC-N2

BIDIRECTIONAL

.25 W

5 V

5 V

e4

260

SILICON

9 V

IEC-61000-4-2; MIL-STD-202

DESD2V5Z1BCSF-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

25 W

7 V

AVALANCHE

1 uA

1

2.5 V

CHIP CARRIER

2.5 V

150 Cel

-65 Cel

NICKEL GOLD

R-XBCC-N2

BIDIRECTIONAL

.25 W

4.5 V

5 V

e4

260

SILICON

9 V

IEC-61000-4-2, 4-5; MIL-STD-202

D36V0S1U2LP1610Q-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40.5 V

AVALANCHE

.2 uA

1

36 V

CHIP CARRIER

36 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

UNIDIRECTIONAL

.3 W

165 pF

59 V

37 V

e4

260

SILICON

44 V

AEC-Q101; IATF 16949; IEC-61000-4-2

D18AP2WF-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1125 W

21.05 V

AVALANCHE

1 uA

1

18 V

SMALL OUTLINE

18 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

29.2 V

20 V

e3

260

SILICON

22.1 V

IEC-61000-4-2; MIL-STD-202

D6V3M1U2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

120 W

7.5 V

AVALANCHE

1 uA

1

6.3 V

CHIP CARRIER

6.3 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

UNIDIRECTIONAL

.25 W

12 V

6.5 V

e3

260

SILICON

8.5 V

IEC-61000-4-2, 4-5; MIL-STD-202

DESD5V0L1BAQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.5 W

7.5 V

AVALANCHE

.5 uA

1

5 V

SMALL OUTLINE

5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

BIDIRECTIONAL

.25 W

12 V

6 V

e3

260

SILICON

9 V

AEC-Q101; IATF 16949; IEC-61000-4-2

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.