Transient Suppression Devices

Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

SMF36A-HE3-08

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1000 W

2.5 V

42.15 V

AVALANCHE

.1 uA

1

36 V

SMALL OUTLINE

36 V

150 Cel

-55 Cel

Matte Tin (Sn)

R-PDSO-F2

1

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

DO-219AB

58.1 V

40 V

e3

30

260

SILICON

44.3 V

AEC-Q101; IEC-61000-4-5

SMF36A-HM3-18

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1000 W

2.5 V

42.15 V

AVALANCHE

.1 uA

1

36 V

SMALL OUTLINE

36 V

150 Cel

-55 Cel

Matte Tin (Sn)

R-PDSO-F2

1

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

DO-219AB

58.1 V

40 V

e3

30

260

SILICON

44.3 V

AEC-Q101; IEC-61000-4-5

SMF40A-E3-18

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1000 W

2.5 V

46.75 V

AVALANCHE

.1 uA

1

40 V

SMALL OUTLINE

40 V

150 Cel

-55 Cel

Matte Tin (Sn)

R-PDSO-F2

1

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

DO-219AB

64.5 V

44.4 V

e3

30

260

SILICON

49.1 V

IEC-61000-4-5

SMF40A-HE3-08

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1000 W

2.5 V

46.75 V

AVALANCHE

.1 uA

1

40 V

SMALL OUTLINE

40 V

150 Cel

-55 Cel

Matte Tin (Sn)

R-PDSO-F2

1

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

DO-219AB

64.5 V

44.4 V

e3

30

260

SILICON

49.1 V

AEC-Q101; IEC-61000-4-5

SMF40A-HM3-18

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1000 W

2.5 V

46.75 V

AVALANCHE

.1 uA

1

40 V

SMALL OUTLINE

40 V

150 Cel

-55 Cel

Matte Tin (Sn)

R-PDSO-F2

1

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

DO-219AB

64.5 V

44.4 V

e3

30

260

SILICON

49.1 V

AEC-Q101; IEC-61000-4-5

SMF58A-HM3-08

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1000 W

2.5 V

67.6 V

AVALANCHE

.1 uA

1

58 V

SMALL OUTLINE

58 V

150 Cel

-55 Cel

Matte Tin (Sn)

R-PDSO-F2

1

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

DO-219AB

95 V

64.4 V

e3

30

260

SILICON

70.8 V

AEC-Q101; IEC-61000-4-5

SMF58A-HM3-18

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1000 W

2.5 V

67.6 V

AVALANCHE

.1 uA

1

58 V

SMALL OUTLINE

58 V

150 Cel

-55 Cel

Matte Tin (Sn)

R-PDSO-F2

1

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

DO-219AB

95 V

64.4 V

e3

30

260

SILICON

70.8 V

AEC-Q101; IEC-61000-4-5

SMF5V0A-HE3-18

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1000 W

2.5 V

6.75 V

AVALANCHE

5 uA

1

5 V

SMALL OUTLINE

5 V

150 Cel

-55 Cel

Matte Tin (Sn)

R-PDSO-F2

1

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

DO-219AB

9.2 V

6.4 V

e3

30

260

SILICON

7.1 V

AEC-Q101; IEC-61000-4-5

ESD207B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

3.65 V

e4

SILICON

ESD0P8RFLE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

50 V

150 Cel

-55 Cel

GOLD

R-XBCC-N4

1

UNIDIRECTIONAL

12 V

e4

SILICON

15 V

ESD1P0RFSH6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

70 V

150 Cel

-55 Cel

R-PDSO-G6

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

15 V

ESD1P0RFWH6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

70 V

150 Cel

-55 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

12 V

e3

SILICON

15 V

ESD5V0S1U03WE6327HTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

6.7 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-55 Cel

R-PDSO-G2

UNIDIRECTIONAL

11 V

5.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

8 V

IEC-61000-4-2, 4-4, 4-5

ESD5V0S2U06E6327HTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

600 W

6.7 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

11 V

5.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

8 V

ESD5V0S5USH6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

130 W

6.7 V

AVALANCHE

5

SMALL OUTLINE

Transient Suppressors

5.3 V

125 Cel

-55 Cel

R-PDSO-G6

UNIDIRECTIONAL

9.3 V

5.7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

7.7 V

ESD5V3L1U02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

125 Cel

-55 Cel

R-XBCC-N2

UNIDIRECTIONAL

10 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD5V3S1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

80 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

125 Cel

-55 Cel

R-XBCC-N2

BIDIRECTIONAL

11 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD5V3U4RRSH6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

6.3 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

6 V

125 Cel

-55 Cel

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

15 V

6.3 V

e3

SILICON

ESD8V0R1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

17 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

14 V

150 Cel

-55 Cel

R-XBCC-N2

BIDIRECTIONAL

23 V

8.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

14 V

AEC-Q101

ESD8V0R1B02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

17 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

14 V

150 Cel

-55 Cel

R-XBCC-N2

BIDIRECTIONAL

23 V

8.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

14 V

AEC-Q101

ESD0P2RF02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD0P2RF02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD0P4RFLE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

50 V

150 Cel

-55 Cel

GOLD

R-XBCC-N4

1

UNIDIRECTIONAL

6 V

e4

SILICON

9 V

ESD102U2099ELE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

SQUARE

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

S-PBCC-N4

UNIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD102U405LE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

750 W

AVALANCHE

4

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

GOLD

R-PBCC-N5

1

UNIDIRECTIONAL

e4

SILICON

7.4 V

ESD110B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

58 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

18.5 V

125 Cel

-40 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

44 V

e4

SILICON

29 V

ESD18VU1B02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

18.5 V

85 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

SILICON

ESD205B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

30 W

8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.5 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

BIDIRECTIONAL

LOW CAPACITANCE

8.5 V

e4

SILICON

ESD206B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

6 V

e4

SILICON

10 V

ESD3V3S1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

SILICON

ESD3V3U4ULCE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

9

YES

RECTANGULAR

UNSPECIFIED

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-40 Cel

GOLD

R-XBCC-N9

1

UNIDIRECTIONAL

11 V

e4

SILICON

ESD3V3XU1USE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

R-PBCC-N2

UNIDIRECTIONAL

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD5V3S1B02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

125 Cel

-40 Cel

R-PBCC-N2

BIDIRECTIONAL

26 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD5V5S1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

150 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

BIDIRECTIONAL

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

10 V

ESD8V0L2B03LE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

8.5 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

14 V

125 Cel

-55 Cel

GOLD

R-XBCC-N3

1

BIDIRECTIONAL

26 V

8.5 V

e4

SILICON

AEC-Q101

ESD112B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

7 V

e4

SILICON

AK10-530C

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

THROUGH-HOLE

2

NO

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

530 V

125 Cel

-55 Cel

GOLD

3

BIDIRECTIONAL

560 V

e4

10

260

SILICON

619 V

IEC-61000-4-2, 4-4, 4-5; UL RECOGNIZED

LCE85-B

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

1500 W

9.92 V

AVALANCHE

1

LONG FORM

Transient Suppressors

8.5 V

175 Cel

-55 Cel

Matte Tin (Sn)

O-PALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

5 W

LOW CAPACITANCE

DO-201AD

14.4 V

9.34 V

e3

40

260

SILICON

10.5 V

SP3012-03UTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

125 Cel

-40 Cel

MATTE TIN

R-PDSO-N6

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

MO-229

e3

SILICON

IEC-61000-4-2, 4-4, 4-5

SP3012-04HTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

125 Cel

-40 Cel

MATTE TIN

R-PDSO-G6

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

MO-178AB

e3

SILICON

IEC-61000-4-2, 4-4, 4-5

P6KE150AR0G

Taiwan Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

LONG FORM

128 V

175 Cel

-55 Cel

MATTE TIN

O-PALF-W2

UNIDIRECTIONAL

ISOLATED

5 W

EXCELLENT CLAMPING CAPABILITY

DO-204AC

143 V

e3

10

260

SILICON

158 V

UL RECOGNIZED

P6KE400AR0G

Taiwan Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

LONG FORM

342 V

175 Cel

-55 Cel

MATTE TIN

O-PALF-W2

UNIDIRECTIONAL

ISOLATED

5 W

EXCELLENT CLAMPING CAPABILITY

DO-204AC

380 V

e3

10

260

SILICON

420 V

UL RECOGNIZED

SMBJ10AM4G

Taiwan Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

SMALL OUTLINE

10 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

UNIDIRECTIONAL

3 W

EXCELLENT CLAMPING CAPABILITY

DO-214AA

11.1 V

e3

30

260

SILICON

12.3 V

SMBJ130AM4G

Taiwan Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1

SMALL OUTLINE

130 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

UNIDIRECTIONAL

3 W

EXCELLENT CLAMPING CAPABILITY

DO-214AA

144 V

e3

30

260

SILICON

159 V

CM1753-1004YT

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

YES

AVALANCHE

Transient Suppressors

UNIDIRECTIONAL

52 V

SILICON

PTVS15-058C-SH

Bourns

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

SQUARE

PLASTIC/EPOXY

SINGLE

66 V

AVALANCHE

10 uA

1

58 V

SMALL OUTLINE

58 V

125 Cel

-55 Cel

SILVER

S-PDSO-G2

BIDIRECTIONAL

110 V

64 V

e4

SILICON

70 V

IEC-61000-4-5; UL RECOGNIZED

PTVS15-076C-SH

Bourns

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

SQUARE

PLASTIC/EPOXY

SINGLE

92 V

AVALANCHE

10 uA

1

76 V

SMALL OUTLINE

76 V

125 Cel

-55 Cel

SILVER

S-PDSO-G2

BIDIRECTIONAL

150 V

85 V

e4

SILICON

95 V

IEC-61000-4-5; UL RECOGNIZED

SMCJ100A-HRAT7

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1500 W

3.5 V

117 V

AVALANCHE

1 uA

1

100 V

SMALL OUTLINE

100 V

150 Cel

-65 Cel

R-PDSO-C2

UNIDIRECTIONAL

6.5 W

EXCELLENT CLAMPING CAPABILITY; HIGH RELIABILITY

DO-214AB

162 V

111 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

123 V

MIL-PRF-19500; MIL-STD-750; UL RECOGNIZED

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.