VARIABLE CAPACITANCE DIODE Varactor Diodes 155

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

BBY52-02W-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

7 V

1

1.85 pF

260

BBY57-02V-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

10 V

1

17.5 pF

260

BBY53-02W-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

6 V

1

5.3 pF

260

BBY58-02W-E6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

10 V

150 Cel

-55 Cel

1

18.3 pF

260

BB555-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

1

18.7 pF

260

BB555-E7912

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

1

18.7 pF

260

BB555-02VE7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

1

18.7 pF

260

BB555-02VE7912

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

1

18.7 pF

260

BB131,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

30 V

TIN

1

12 pF

e3

30

260

BB179BLX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

Tin (Sn)

19.1 pF

e3

BB182,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

Tin (Sn)

52 pF

e3

BB182,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

Tin (Sn)

52 pF

e3

BB182,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

Tin (Sn)

52 pF

e3

BB659-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

1

38.3 pF

260

BB565-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

1

20 pF

260

BB565-E7908

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

1

20 pF

260

BB659CE7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

30 V

1

39 pF

260

BB659CE7912

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

30 V

1

39 pF

260

BB659C-02VE7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

30 V

1

39 pF

260

BB659C-02VE7912

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

30 V

1

39 pF

260

BB664-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

1

41.8 pF

260

BB689-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

1

56.5 pF

260

BB689-E7908

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

1

56.5 pF

260

BB689-E7903

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

1

56.5 pF

260

BB857-E7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

1

6.6 pF

260

JDV2S10FS(TPL3)

Toshiba

VARIABLE CAPACITANCE DIODE

YES

ABRUPT

SMALL OUTLINE

Varactors

10 V

1SV282(TPH3,F)

Toshiba

VARIABLE CAPACITANCE DIODE

YES

ABRUPT

SMALL OUTLINE

Varactors

34 V

35.5 pF

BB171X

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

32 V

125 Cel

-55 Cel

R-PDSO-G2

1

57 pF

8.77 %

32 V

260

SILICON

20.6

IEC-60134

SMV1206-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-F2

Not Qualified

.25 W

11.6 pF

8.62 %

22 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.45

BB149,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

18.75 pF

4 %

e3

SILICON

8.2

BB149A,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

30 V

TIN

21.26 pF

e3

BB178,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

32 V

TIN

e3

BB178,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

32 V

TIN

e3

BB179,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

TIN

18.22 pF

e3

BB179,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

TIN

18.22 pF

e3

BB179B,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

TIN

18.22 pF

e3

BB179B,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

TIN

18.22 pF

e3

BB181,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

30 V

TIN

1

e3

30

260

BB187,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

TIN

e3

BB187,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

TIN

e3

BB198,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

20 V

MATTE TIN

1

26.75 pF

e3

SMV2025-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

.02 uA

1

19 V

CHIP CARRIER

20 V

175 Cel

-55 Cel

R-PBCC-N2

.25 W

4.65 pF

9.68 %

20 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.2

BB659C-02V-H7902

Infineon Technologies

VARIABLE CAPACITANCE DIODE

YES

Varactors

30 V

MATTE TIN

1

39 pF

e3

260

SMV1770-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

YES

Varactors

12 V

1

23.6 pF

260

SILICON

BB833E6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

S BAND

1

SMALL OUTLINE

TIN

R-PDSO-G2

1

Not Qualified

9.3 pF

8.11 %

35 V

e3

SILICON

11

BB545E7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-G2

1

20 pF

LOW INDUCTANCE

7.5 %

e3

SILICON

6.3

BB55502VH7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-F2

18.7 pF

LOW INDUCTANCE

6.67 %

30 V

SILICON

6

BB555H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-F2

18.7 pF

LOW INDUCTANCE

6.67 %

30 V

SILICON

6

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.