2 Varactor Diodes 82

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio	Reference Standard
BB179,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V	125 Cel	-55 Cel	TIN	R-PDSO-F2		Not Qualified		19.74 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE			30 V	e3			SILICON	8.45
BB179B,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V	125 Cel	-55 Cel	TIN	R-PDSO-F2		Not Qualified		19.11 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		4.66 %	32 V	e3			SILICON	8.45
BB182,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V	125 Cel	-55 Cel	TIN	R-PDSO-F2		Not Qualified		57 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		8.77 %	32 V	e3			SILICON	20.6
BB187,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V	125 Cel	-55 Cel	TIN	R-PDSO-F2		Not Qualified		29.3 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE			32 V	e3			SILICON	11
BB208-03,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	10 V	125 Cel	-55 Cel	TIN	R-PDSO-G2	1	Not Qualified		10.1 pF					e3	30	260	SILICON	3.7
BB208-03,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	10 V	125 Cel	-55 Cel	TIN	R-PDSO-G2	1	Not Qualified		10.1 pF					e3	30	260	SILICON	3.7
BB208-02,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	10 V	125 Cel	-55 Cel	TIN	R-PDSO-F2	1	Not Qualified		10.1 pF					e3	30	260	SILICON	3.7
BB202LX,315	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		CHIP CARRIER	Varactors	6 V	85 Cel	-55 Cel	TIN	R-PBCC-N2		Not Qualified		30.85 pF			8.59 %		e3			SILICON	2.5
BB184,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	13 V	125 Cel	-55 Cel	TIN	R-PDSO-F2		Not Qualified		14 pF	2% MATCHED SETS OF 5 DIODES ARE AVAILABLE		9.29 %	13 V	e3			SILICON	6
BB184,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	13 V	125 Cel	-55 Cel	TIN	R-PDSO-F2		Not Qualified		14 pF	2% MATCHED SETS OF 5 DIODES ARE AVAILABLE		9.29 %	13 V	e3			SILICON	6
BB179LX,315	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-N2		Not Qualified		19.75 pF			7.848 %		e3			SILICON	8.45
BB178LX,315	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CHIP CARRIER	Varactors	32 V	125 Cel	-55 Cel	TIN	R-PBCC-N2		Not Qualified		38.5 pF			10 %		e3			SILICON	13.5
SMV1763-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		SMALL OUTLINE	Varactors				Matte Tin (Sn)	R-PDSO-F2	1	Not Qualified	.25 W	6.7 pF	LOW NOISE		7.46 %	10 V	e3	40	260	SILICON	2.3
BBY51-02LE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE	HYPERABRUPT			1		CHIP CARRIER	Varactors	7 V			MATTE TIN	R-XBCC-N2		Not Qualified		5.4 pF			6.48 %	7 V	e3		260	SILICON	1.55
BBY51-02WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	7 V			MATTE TIN	R-PDSO-F2	1	Not Qualified		5.4 pF			6.48 %	7 V	e3		260	SILICON	1.55
BBY55-02VE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	16 V			MATTE TIN	R-PDSO-F2	1	Not Qualified		18.6 pF			5.66 %	16 V	e3		260	SILICON	2
BBY55-02WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	16 V			MATTE TIN	R-PDSO-F2	1	Not Qualified		18.6 pF			5.66 %	16 V	e3		260	SILICON	2
BBY59-02VE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	15 V			MATTE TIN	R-PDSO-F2	1	Not Qualified		27.8 pF			4.32 %	15 V	e3		260	SILICON	3.4
BBY65-02VE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	15 V			MATTE TIN	R-PDSO-F2	1	Not Qualified		29.5 pF			4.41 %	15 V	e3		260	SILICON	10
MMVL109T1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G2	1	Not Qualified	.2 W	29 pF	HIGH RELIABILITY		10.34 %	30 V	e3	30	260	SILICON	5
MMVL3102T1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G2	1	Not Qualified	.2 W	22 pF	HIGH RELIABILITY		11.11 %	30 V	e3	30	260	SILICON	4.5
MMVL809T1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			TIN	R-PDSO-G2	1	Not Qualified	.2 W	5.3 pF	HIGH RELIABILITY		15.09 %	20 V	e3	30	260	SILICON	1.8
MV209G	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN SILVER COPPER	O-PBCY-T2		Not Qualified	.2 W	29 pF	HIGH RELIABILITY	TO-226AC	10.34 %	30 V	e1		260	SILICON	5
MV2101G	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	450	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN SILVER COPPER	O-PBCY-T2		Not Qualified	.28 W	6.8 pF	HIGH Q, HIGH RELIABILITY	TO-92	10 %	30 V	e1		260	SILICON	2.5
MV2109G	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN SILVER COPPER	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH Q, HIGH RELIABILITY	TO-92	10 %	30 V	e1		260	SILICON	2.5
MV2109RLRAG	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN SILVER COPPER	O-PBCY-T2		Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e1		260	SILICON	2.5
SMV2023-011LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	22 V			Matte Tin (Sn)	R-PDSO-G2	1	Not Qualified	.25 W	4.9 pF	LOW NOISE		10.2 %	22 V	e3	40	260	SILICON	4.2
BB565H7903XTMA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				20 pF	LOW INDUCTANCE		7.5 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	6.3
BB565H7908XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				20 pF	LOW INDUCTANCE		7.5 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	6.3
BB565H7912XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				20 pF	LOW INDUCTANCE		7.5 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	6.3
BB689H7908XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				56.5 pF	CAPACITANCE MATCHED TO 2%		9.33 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	14.5
BBY58-02V-E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	10 V	150 Cel	-55 Cel		R-PDSO-F2	1			18.3 pF			4.89 %	10 V			260	SILICON	1.15	AEC-Q101
BB187LX,315	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY		1		CHIP CARRIER			125 Cel	-55 Cel		R-PBCC-N2				31.75 pF	2% MATCHED SETS OF 5 DIODES ARE AVAILABLE		7.71 %	32 V				SILICON	11
1SV305,H3F	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY	.003 uA	1	10 V	SMALL OUTLINE		10 V	125 Cel			R-PDSO-F2				18.3 pF			5.46 %	10 V				SILICON	2.8

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.