3 Varactor Diodes 26

Reset All

Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BBY5805WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3				18.3 pF	LOW INDUCTANCE		4.89 %	10 V				SILICON	1.15
BBY5806WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3				18.3 pF	LOW INDUCTANCE		4.89 %	10 V				SILICON	1.15
BBY6605WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G3	1			68.7 pF	HIGH Q		4 %	12 V	e3			SILICON	5
BB200,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE			85 Cel	-55 Cel	TIN	R-PDSO-G3		Not Qualified		70 pF		TO-236AB	6 %	18 V	e3			SILICON	5
BB804,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE	Varactors	18 V	125 Cel	-55 Cel	MATTE TIN	R-PDSO-G3		Not Qualified		44.25 pF		TO-236AB	5.08 %	18 V	e3		260	SILICON	1.65
BBY31,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G3		Not Qualified		16.5 pF			11.11 %	30 V	e3	NOT SPECIFIED	NOT SPECIFIED	SILICON
BB207,235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE	Varactors	15 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1	Not Qualified		81 pF		TO-236AB	6.17 %		e3	30	260	SILICON	2.6
MMBV109LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G3	1	Not Qualified	.2 W	29 pF	HIGH RELIABILITY	TO-236AB	10.34 %	30 V	e3	30	260	SILICON	5
MMBV409LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			TIN	R-PDSO-G3	1	Not Qualified	.225 W	29 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10.34 %	20 V	e3	30	260	SILICON	1.5
MMBV105GLT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	250	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	150 Cel	-55 Cel	TIN	R-PDSO-G3	1	Not Qualified	.225 W	2.15 pF	HIGH RELIABILITY	TO-236AB	30.23 %	30 V	e3	30	260	SILICON	4
MMBV3102LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel		TIN	R-PDSO-G3	1	Not Qualified	.225 W	22 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	11.1 %	30 V	e3	30	260	SILICON	4.5
MMBV809LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	75	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			TIN	R-PDSO-G3	1	Not Qualified	.225 W	5.3 pF	HIGH RELIABILITY	TO-236AB	15.09 %	20 V	e3	30	260	SILICON	1.8
MMBV609LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	250	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	VERY HIGH FREQUENCY		2		SMALL OUTLINE	Varactors	20 V	125 Cel		TIN	R-PDSO-G3	1	Not Qualified	.225 W	29 pF	HIGH Q	TO-236AB	10.34 %	20 V	e3	30	260	SILICON	1.8
MMBV109LT3G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G3	1	Not Qualified	.2 W	29 pF	HIGH RELIABILITY	TO-236AB	10.34 %	30 V	e3		260	SILICON	5
MMBV2101LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	450	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G3	1	Not Qualified	.225 W	6.8 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e3	30	260	SILICON	2.5
MMBV2107LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	350	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G3	1	Not Qualified	.225 W	22 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e3	30	260	SILICON	2.5
MMBV2108LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G3	1	Not Qualified	.225 W	27 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e3	30	260	SILICON	2.5
MMBV432LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	VERY HIGH FREQUENCY		2		SMALL OUTLINE	Varactors	14 V			TIN	R-PDSO-G3	1	Not Qualified	.225 W	45.55 pF	HIGH Q, 1% MATCHING GUARANTEED	TO-236AB	5.6 %	14 V	e3	30	260	SILICON	1.5
MMBV809LT3G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	75	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			TIN	R-PDSO-G3	1	Not Qualified	.225 W	5.3 pF	HIGH RELIABILITY	TO-236AB	15.09 %	20 V	e3		260	SILICON	1.8
MV104RLRAG	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT			2		CYLINDRICAL	Varactors	32 V			TIN SILVER COPPER	O-PBCY-T3		Not Qualified	.28 W	39.5 pF	1% MATCHING GUARANTEED	TO-92	6.33 %	32 V	e1		260	SILICON	2.5
MMBV2105LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V	150 Cel		TIN	R-PDSO-G3	1	Not Qualified	.225 W	15 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e3	30	260	SILICON	2.5
1SV228(TPH3,F)	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	VERY HIGH FREQUENCY		2		SMALL OUTLINE			125 Cel			R-PDSO-G3				30.5 pF			6.56 %	15 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.1
BBY5305WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	ULTRA HIGH FREQUENCY		2		SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3				5.3 pF			9.43 %	6 V				SILICON	1.8
BBY6605WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3				68.7 pF	HIGH Q		4 %	12 V				SILICON	5
BBY5705WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE						R-PDSO-G3				17.5 pF	HIGH Q, LOW INDUCTANCE		5.98 %	10 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	3
KVX2162-23-0/TR	Microchip Technology	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY TO L BAND	.05 uA	1		SMALL OUTLINE		22 V	125 Cel	-55 Cel		R-PDSO-G3				10 pF	HIGH RELIABILITY		10 %	22 V				SILICON

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.