DUAL Varactor Diodes 96

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio	Reference Standard
BB171X	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE		32 V	125 Cel	-55 Cel		R-PDSO-G2	1			57 pF		8.77 %	32 V			260	SILICON	20.6	IEC-60134
SMV1206-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-F2		Not Qualified	.25 W	11.6 pF		8.62 %	22 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	4.45
BB149,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2				18.75 pF		4 %		e3			SILICON	8.2
BB833E6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		S BAND		1		SMALL OUTLINE					TIN	R-PDSO-G2	1	Not Qualified		9.3 pF		8.11 %	35 V	e3			SILICON	11
BB545E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2	1			20 pF	LOW INDUCTANCE	7.5 %		e3			SILICON	6.3
BB55502VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				18.7 pF	LOW INDUCTANCE	6.67 %	30 V				SILICON	6
BB555H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				18.7 pF	LOW INDUCTANCE	6.67 %	30 V				SILICON	6
BB56502VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				20 pF	LOW INDUCTANCE	7.5 %					SILICON	6.3
BB565H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				20 pF	LOW INDUCTANCE	7.5 %					SILICON	6.3
BB639CE7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2	1			39 pF		7.01 %	35 V	e3			SILICON	9.5
BB644E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	MATTE TIN	R-PDSO-G2				41.8 pF		6.59 %	30 V	e3			SILICON	11
BB659CH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				39 pF		7.01 %	35 V				SILICON	9.5
BB659H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				38.3 pF	LOW INDUCTANCE	5.26 %	30 V				SILICON	9.8
BB66402VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				41.8 pF		6.59 %	30 V				SILICON	11
BB664H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				41.8 pF		6.59 %	30 V				SILICON	11
BB669E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2				56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %					SILICON	14.5
BB68902VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %					SILICON	14.5
BB689H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %					SILICON	14.5
BB831E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		L BAND		1		SMALL OUTLINE			125 Cel	-55 Cel	MATTE TIN	R-PDSO-G2				8.8 pF	CAPACITANCE MATCHED TO 3%	11.36 %		e3			SILICON	7.8
BB857H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				6.6 pF		9.09 %	30 V				SILICON	9.7
BBY5202WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				1.85 pF	LOW INDUCTANCE	22.22 %	7 V				SILICON	1.1
BBY5302WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-F2				5.3 pF		9.43 %	6 V				SILICON	1.8
BBY5502WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				18.6 pF	LOW INDUCTANCE	5.66 %	16 V				SILICON	2
BBY5802WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY5803WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2				18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY5805WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3				18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY5806WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3				18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY6605WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G3	1			68.7 pF	HIGH Q	4 %	12 V	e3			SILICON	5
BBY57-02WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	10 V				R-PDSO-F2	1	Not Qualified		17.5 pF		5.98 %	10 V			260	SILICON	3
BB174LXYL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel		R-PDSO-N2				19.75 pF		7.85 %					SILICON	8.45	IEC-60134
BB173LXYL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	32 V	125 Cel	-55 Cel		R-PDSO-N2				38.5 pF		10 %	32 V				SILICON	13.5	IEC-60134
SMV1430-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	3500	PLASTIC/EPOXY	SINGLE	ABRUPT	S BAND		1		SMALL OUTLINE					MATTE TIN	R-PDSO-F2	1	Not Qualified	.25 W	1.01 pF	LOW NOISE		30 V	e3		260	SILICON	3.8
BBY56-02WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	10 V				R-PDSO-F2	1	Not Qualified		40 pF		7.5 %	10 V			260	SILICON	2.15
BB135,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2	1	Not Qualified		19.25 pF			30 V	e3	30	260	SILICON	8.9
BB141,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-F2	NOT APPLICABLE	Not Qualified		4.2 pF				e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	1.65
BB143,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-F2	NOT APPLICABLE	Not Qualified		5.3 pF				e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	2.1
BB145,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-F2	NOT APPLICABLE	Not Qualified		6.9 pF			6 V	e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	2
BB148,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2		Not Qualified		39.3 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		30 V	e3			SILICON	14.5
BB149,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2		Not Qualified		18.75 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE	4 %	30 V	e3			SILICON	8.2
BB149A,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2		Not Qualified		19.74 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE	7.7 %	30 V	e3			SILICON	8.45
BB152,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V	125 Cel	-55 Cel	TIN	R-PDSO-G2		Not Qualified		57 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE	8.77 %	32 V	e3			SILICON	20.6
BB153,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	32 V	125 Cel	-55 Cel	TIN	R-PDSO-G2		Not Qualified		38.5 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE	10 %	32 V	e3			SILICON	13.5
BB153,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	32 V	125 Cel	-55 Cel	TIN	R-PDSO-G2		Not Qualified		38.5 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE	10 %	32 V	e3			SILICON	13.5
BB156,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	10 V	125 Cel	-55 Cel	TIN	R-PDSO-G2	1	Not Qualified		16 pF		10 %		e3	30	260	SILICON	2.7
BB156,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	10 V	125 Cel	-55 Cel	Tin (Sn)	R-PDSO-G2	1	Not Qualified		16 pF		10 %		e3	30	260	SILICON	2.7
BB178,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	32 V	125 Cel	-55 Cel	TIN	R-PDSO-F2		Not Qualified		38.5 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		32 V	e3			SILICON	13.5
BB178,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	32 V	125 Cel	-55 Cel	TIN	R-PDSO-F2		Not Qualified		38.5 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		32 V	e3			SILICON	13.5
BB179,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V	125 Cel	-55 Cel	TIN	R-PDSO-F2		Not Qualified		19.74 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		30 V	e3			SILICON	8.45

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.