Infineon Technologies Varactor Diodes 69

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	No. of Elements	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BBY52-02W-E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	7 V					1		1.85 pF					260
BBY57-02V-E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	10 V					1		17.5 pF					260
BBY53-02W-E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	6 V					1		5.3 pF					260
BBY58-02W-E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	10 V	150 Cel	-55 Cel			1		18.3 pF					260
BB555-E7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	35 V					1		18.7 pF					260
BB555-E7912	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	35 V					1		18.7 pF					260
BB555-02VE7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	35 V					1		18.7 pF					260
BB555-02VE7912	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	35 V					1		18.7 pF					260
BB659-E7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	35 V					1		38.3 pF					260
BB565-E7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	35 V					1		20 pF					260
BB565-E7908	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	35 V					1		20 pF					260
BB659CE7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	30 V					1		39 pF					260
BB659CE7912	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	30 V					1		39 pF					260
BB659C-02VE7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	30 V					1		39 pF					260
BB659C-02VE7912	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	30 V					1		39 pF					260
BB664-E7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	35 V					1		41.8 pF					260
BB689-E7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	35 V					1		56.5 pF					260
BB689-E7908	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	35 V					1		56.5 pF					260
BB689-E7903	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	35 V					1		56.5 pF					260
BB857-E7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	35 V					1		6.6 pF					260
BB659C-02V-H7902	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES								Varactors	30 V			MATTE TIN		1		39 pF				e3	260
BB833E6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		S BAND	1	SMALL OUTLINE					TIN	R-PDSO-G2	1	Not Qualified	9.3 pF		8.11 %	35 V	e3		SILICON	11
BB545E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2	1		20 pF	LOW INDUCTANCE	7.5 %		e3		SILICON	6.3
BB55502VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			18.7 pF	LOW INDUCTANCE	6.67 %	30 V			SILICON	6
BB555H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			18.7 pF	LOW INDUCTANCE	6.67 %	30 V			SILICON	6
BB56502VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			20 pF	LOW INDUCTANCE	7.5 %				SILICON	6.3
BB565H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			20 pF	LOW INDUCTANCE	7.5 %				SILICON	6.3
BB639CE7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2	1		39 pF		7.01 %	35 V	e3		SILICON	9.5
BB644E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel	MATTE TIN	R-PDSO-G2			41.8 pF		6.59 %	30 V	e3		SILICON	11
BB659CH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			39 pF		7.01 %	35 V			SILICON	9.5
BB659H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			38.3 pF	LOW INDUCTANCE	5.26 %	30 V			SILICON	9.8
BB66402VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			41.8 pF		6.59 %	30 V			SILICON	11
BB664H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			41.8 pF		6.59 %	30 V			SILICON	11
BB669E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2			56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %				SILICON	14.5
BB68902VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %				SILICON	14.5
BB689H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %				SILICON	14.5
BB831E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		L BAND	1	SMALL OUTLINE			125 Cel	-55 Cel	MATTE TIN	R-PDSO-G2			8.8 pF	CAPACITANCE MATCHED TO 3%	11.36 %		e3		SILICON	7.8
BB857H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			6.6 pF		9.09 %	30 V			SILICON	9.7
BBY5202LE6327XTMA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	SINGLE	HYPERABRUPT		1	CHIP CARRIER			150 Cel	-55 Cel		R-XBCC-N2			1.85 pF		22.22 %	7 V			SILICON	1.1
BBY5202WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			1.85 pF	LOW INDUCTANCE	22.22 %	7 V			SILICON	1.1
BBY5302LE6327XTMA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	1	CHIP CARRIER			125 Cel	-55 Cel		R-XBCC-N2			5.3 pF		9.43 %	6 V			SILICON	1.8
BBY5302WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	1	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-F2			5.3 pF		9.43 %	6 V			SILICON	1.8
BBY5502WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			18.6 pF	LOW INDUCTANCE	5.66 %	16 V			SILICON	2
BBY5802WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2			18.3 pF	LOW INDUCTANCE	4.89 %	10 V			SILICON	1.15
BBY5803WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2			18.3 pF	LOW INDUCTANCE	4.89 %	10 V			SILICON	1.15
BBY5805WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3			18.3 pF	LOW INDUCTANCE	4.89 %	10 V			SILICON	1.15
BBY5806WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3			18.3 pF	LOW INDUCTANCE	4.89 %	10 V			SILICON	1.15
BBY6605WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G3	1		68.7 pF	HIGH Q	4 %	12 V	e3		SILICON	5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.