NXP Semiconductors Varactor Diodes 52

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

BB131,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

30 V

TIN

1

12 pF

e3

30

260

BB179BLX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

Tin (Sn)

19.1 pF

e3

BB182,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

Tin (Sn)

52 pF

e3

BB182,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

Tin (Sn)

52 pF

e3

BB182,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

Tin (Sn)

52 pF

e3

BB171X

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

32 V

125 Cel

-55 Cel

R-PDSO-G2

1

57 pF

8.77 %

32 V

260

SILICON

20.6

IEC-60134

BB149,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

18.75 pF

4 %

e3

SILICON

8.2

BB149A,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

30 V

TIN

21.26 pF

e3

BB178,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

32 V

TIN

e3

BB178,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

32 V

TIN

e3

BB179,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

TIN

18.22 pF

e3

BB179,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

TIN

18.22 pF

e3

BB179B,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

TIN

18.22 pF

e3

BB179B,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

TIN

18.22 pF

e3

BB181,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

30 V

TIN

1

e3

30

260

BB187,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

TIN

e3

BB187,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

TIN

e3

BB198,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

YES

Varactors

20 V

MATTE TIN

1

26.75 pF

e3

BB174LXYL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

R-PDSO-N2

19.75 pF

7.85 %

SILICON

8.45

IEC-60134

BB173LXYL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

32 V

125 Cel

-55 Cel

R-PDSO-N2

38.5 pF

10 %

32 V

SILICON

13.5

IEC-60134

BB135,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

1

Not Qualified

19.25 pF

30 V

e3

30

260

SILICON

8.9

BB141,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-F2

NOT APPLICABLE

Not Qualified

4.2 pF

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

1.65

BB143,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-F2

NOT APPLICABLE

Not Qualified

5.3 pF

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.1

BB145,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-F2

NOT APPLICABLE

Not Qualified

6.9 pF

6 V

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

2

BB148,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

39.3 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

SILICON

14.5

BB149,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

18.75 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

4 %

30 V

e3

SILICON

8.2

BB149A,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

19.74 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

7.7 %

30 V

e3

SILICON

8.45

BB152,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

57 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

8.77 %

32 V

e3

SILICON

20.6

BB153,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

32 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

38.5 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

10 %

32 V

e3

SILICON

13.5

BB153,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

32 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

38.5 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

10 %

32 V

e3

SILICON

13.5

BB156,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

1

Not Qualified

16 pF

10 %

e3

30

260

SILICON

2.7

BB156,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

125 Cel

-55 Cel

Tin (Sn)

R-PDSO-G2

1

Not Qualified

16 pF

10 %

e3

30

260

SILICON

2.7

BB178,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

32 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

38.5 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

e3

SILICON

13.5

BB178,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

32 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

38.5 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

e3

SILICON

13.5

BB179,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.74 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

SILICON

8.45

BB179,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.74 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

SILICON

8.45

BB179B,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

19.11 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

4.66 %

32 V

e3

SILICON

8.45

BB182,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

57 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

8.77 %

32 V

e3

SILICON

20.6

BB187,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

29.3 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

e3

SILICON

11

BB200,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

SMALL OUTLINE

85 Cel

-55 Cel

TIN

R-PDSO-G3

Not Qualified

70 pF

TO-236AB

6 %

18 V

e3

SILICON

5

BB804,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.02 uA

2

16 V

SMALL OUTLINE

Varactors

18 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

Not Qualified

44.25 pF

TO-236AB

5.08 %

18 V

e3

260

SILICON

1.65

BBY31,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.01 uA

1

28 V

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G3

Not Qualified

16.5 pF

11.11 %

30 V

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

BB208-03,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

1

Not Qualified

10.1 pF

e3

30

260

SILICON

3.7

BB208-03,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

1

Not Qualified

10.1 pF

e3

30

260

SILICON

3.7

BB208-02,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

1

Not Qualified

10.1 pF

e3

30

260

SILICON

3.7

BB207,235

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

SMALL OUTLINE

Varactors

15 V

125 Cel

-55 Cel

TIN

R-PDSO-G3

1

Not Qualified

81 pF

TO-236AB

6.17 %

e3

30

260

SILICON

2.6

BB202LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

CHIP CARRIER

Varactors

6 V

85 Cel

-55 Cel

TIN

R-PBCC-N2

Not Qualified

30.85 pF

8.59 %

e3

SILICON

2.5

BB184,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

13 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

Not Qualified

14 pF

2% MATCHED SETS OF 5 DIODES ARE AVAILABLE

9.29 %

13 V

e3

SILICON

6

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.