BOTTOM Zener Diodes 13

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Maximum Voltage Temperature Coefficient Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Knee Impedance Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

BZT52C5V1LP-7B

Diodes Incorporated

ZENER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

5.1 V

ZENER

1

CHIP CARRIER

Voltage Reference Diodes

5.88 %

150 Cel

60 ohm

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

HIGH RELIABILITY

e4

30

260

SILICON

BZT52C6V8LPQ-7

Diodes Incorporated

ZENER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

4.5 mV/Cel

6.8 V

ZENER

2 uA

1

4 V

CHIP CARRIER

6.56 %

80 ohm

150 Cel

15 ohm

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

UNIDIRECTIONAL

.25 W

e4

SILICON

AEC-Q101; IATF 16949

ICL8069CCZQ

Maxim Integrated

ZENER DIODE

BOTTOM

WIRE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

.0615 mV/Cel

1.23 V

ZENER

1

CYLINDRICAL

TIN LEAD

O-PBCY-W2

Not Qualified

LOW NOISE

e0

SILICON

ICL8069DCZQ

Maxim Integrated

ZENER DIODE

BOTTOM

WIRE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

.123 mV/Cel

1.23 V

ZENER

1

CYLINDRICAL

TIN LEAD

O-PBCY-W2

Not Qualified

LOW NOISE

e0

SILICON

NZD3V3MUT5G

Onsemi

ZENER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

3.3 V

1.1 V

ZENER

10 uA

1

1 V

CHIP CARRIER

4.99 %

1000 ohm

150 Cel

100 ohm

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.2 W

e4

30

260

SILICON

NZD4V3MUT5G

Onsemi

ZENER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

4.3 V

1.1 V

ZENER

5 uA

1

1 V

CHIP CARRIER

4.99 %

1000 ohm

150 Cel

100 ohm

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.2 W

e4

30

260

SILICON

NZD6V8MUT5G

Onsemi

ZENER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

6.8 V

1.1 V

ZENER

.5 uA

1

3.5 V

CHIP CARRIER

5 %

60 ohm

150 Cel

40 ohm

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.2 W

e4

30

260

SILICON

NZD8V2MUT5G

Onsemi

ZENER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

8.2 V

1.1 V

ZENER

.5 uA

1

5 V

CHIP CARRIER

5 %

60 ohm

150 Cel

30 ohm

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.2 W

e4

30

260

SILICON

1N2813BPBFREE

Central Semiconductor

ZENER DIODE

BOTTOM

PIN/PEG

2

NO

ROUND

METAL

830 mA

SINGLE

10.5 mV/Cel

15 V

1.5 V

ZENER

5 uA

1

11.4 V

FLANGE MOUNT

5 %

80 ohm

175 Cel

1.4 ohm

-65 Cel

MATTE TIN OVER NICKEL

O-MBFM-P2

UNIDIRECTIONAL

ANODE

50 W

HIGH RELIABILITY

TO-3

e3

SILICON

GDZ16LP3-7

Diodes Incorporated

ZENER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

16 V

ZENER

1

CHIP CARRIER

5 %

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

e3

260

SILICON

GDZ18LP3-7

Diodes Incorporated

ZENER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

18 V

ZENER

1

CHIP CARRIER

5 %

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

e3

260

SILICON

GDZ4V1LP3-7

Diodes Incorporated

ZENER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

4.1 V

ZENER

1

CHIP CARRIER

5.3 %

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

e3

260

SILICON

BZT52C13LPQ-7B

Diodes Incorporated

ZENER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

11 mV/Cel

13 V

ZENER

.1 uA

1

8 V

CHIP CARRIER

8.9 %

170 ohm

150 Cel

30 ohm

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

UNIDIRECTIONAL

.25 W

e4

SILICON

AEC-Q101; IATF 16949

Zener Diodes

Zener diodes are electronic components that are designed to operate in the reverse breakdown region of their P-N junction, providing a stable and predictable voltage output. They are commonly used in electronic circuits as voltage regulators, voltage references, and surge protectors.

Zener diodes operate based on the properties of their P-N junction, which is designed to have a narrow depletion region and a low breakdown voltage. When a reverse voltage is applied to the diode, the depletion region widens, allowing a small reverse current to flow. As the voltage across the diode increases, the reverse current increases exponentially, maintaining a stable voltage across the diode.

Zener diodes offer several advantages over other types of voltage regulators, such as simplicity, low cost, and high efficiency. They do not require any external components, such as capacitors or inductors, and they can provide a stable output voltage over a wide range of input voltages and temperatures.

Zener diodes are commonly used in electronic circuits that require a stable voltage source, such as power supplies, battery chargers, and voltage regulators. They come in different package sizes and voltage ratings, depending on the application and the required performance.