Logic Gates

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Part	Manufacturer	Logic IC Type	Temperature Grade	Terminal Form	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Schmitt Trigger	Surface Mount	No. of Functions	Technology	Screening Level	No. of Inputs	Packing Method	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Load Capacitance (CL)	Package Style (Meter)	Package Equivalence Code	Propagation Delay (tpd)	Maximum I (ol)	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Minimum Supply Voltage (Vsup)	Maximum Power Supply Current (ICC)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Family
74AUP2G34FW4-7	Diodes Incorporated	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE		PLASTIC/EPOXY	NO	YES	2	CMOS		1	TR	3	1.2/3.3	30 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,14	20.8 ns	1.7 Amp	Gates	.35 mm	125 Cel		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	S-PDSO-N6	1	3.6 V	.4 mm	1 mm	Not Qualified	.8 V			e4	30	260	1 mm	AUP/ULP/V
SN54AC02VTD1	Texas Instruments	NOR GATE		NO LEAD	14	DIE	RECTANGULAR	50k Rad(Si)	UNSPECIFIED		YES	4	CMOS		2	TUBE	5			UNCASED CHIP										UPPER	R-XUUC-N14		5.5 V				1.5 V				NOT SPECIFIED	NOT SPECIFIED		AC
SN54AC02VTD2	Texas Instruments	NOR GATE		NO LEAD	14	DIE	RECTANGULAR	50k Rad(Si)	UNSPECIFIED		YES	4	CMOS		2	TUBE	5			UNCASED CHIP										UPPER	R-XUUC-N14		5.5 V				1.5 V				NOT SPECIFIED	NOT SPECIFIED		AC
NLVVHC1G132DFT1G	Onsemi	NAND GATE	MILITARY	GULL WING	5	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	YES	1	CMOS	AEC-Q100	2	TR	3	2/5.5	50 pF	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP5/6,.08	19.6 ns	8 Amp	Gates	.65 mm	125 Cel		-55 Cel	MATTE TIN	DUAL	R-PDSO-G5	1	5.5 V	1.1 mm	1.25 mm	Not Qualified	2 V	.04 mA		e3	30	260	2 mm	AHC/VHC/H/U/V
SN74LVC1G32DPKR	Texas Instruments	OR GATE	INDUSTRIAL	NO LEAD	5	SON	RECTANGULAR		PLASTIC/EPOXY		YES	1	CMOS		2		1.8			SMALL OUTLINE		8 ns				85 Cel		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-N5	1	5.5 V				1.65 V			e4	30	260		LVC/LCX/Z
MC74HC30ADTG	Onsemi	NAND GATE	MILITARY	GULL WING	14	TSSOP	RECTANGULAR		PLASTIC/EPOXY		YES	1	CMOS		8		5			SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		265 ns			.65 mm	125 Cel		-55 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G14	1	6 V	1.2 mm	4.4 mm		2 V			e4	30	260	5 mm	HC/UH
SN74AHCT14-W	Texas Instruments	INVERTER	INDUSTRIAL	NO LEAD		DIE	RECTANGULAR		UNSPECIFIED		YES	6	CMOS		1		5			UNCASED CHIP		9 ns				85 Cel		-40 Cel		UPPER	R-XUUC-N		5.5 V				4.5 V							AHCT/VHCT/VT
74AUP1G04FW5-7	Diodes Incorporated	INVERTER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE		PLASTIC/EPOXY		YES	1	CMOS		1		1.2			SMALL OUTLINE, VERY THIN PROFILE		27 ns			.35 mm	125 Cel		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	S-PDSO-N6		3.6 V	.5 mm	1 mm		.8 V			e4		260	1 mm	AUP/ULP/V
74AUP1G07FW5-7	Diodes Incorporated	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE		PLASTIC/EPOXY		YES	1	CMOS		1		1.2			SMALL OUTLINE, VERY THIN PROFILE		20.7 ns			.35 mm	125 Cel	OPEN-DRAIN	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	S-PDSO-N6		3.6 V	.5 mm	1 mm		.8 V			e4		260	1 mm	AUP/ULP/V
74AUP1G32FW5-7	Diodes Incorporated	OR GATE	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE		PLASTIC/EPOXY		YES	1	CMOS		2		1.2			SMALL OUTLINE, VERY THIN PROFILE		23.7 ns			.35 mm	125 Cel		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	S-PDSO-N6		3.6 V	.5 mm	1 mm		.8 V			e4		260	1 mm	AUP/ULP/V
NLVVHC1G132DFT2G	Onsemi	NAND GATE	MILITARY	GULL WING	5	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	YES	1	CMOS	AEC-Q100	2	TR	3		50 pF	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP5/6,.08	19.6 ns	8 Amp	Gate	.65 mm	125 Cel		-55 Cel	MATTE TIN	DUAL	R-PDSO-G5	1	5.5 V	1.1 mm	1.25 mm		2 V	.04 mA		e3	30	260	2 mm	AHC/VHC/H/U/V
74AUP1G06FX4-7	Diodes Incorporated	INVERTER	AUTOMOTIVE	BALL	6	VFBGA	RECTANGULAR		PLASTIC/EPOXY	NO	YES	1	CMOS		1	TR	3	1.2/3.3	30 pF	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,20	21.3 ns	1.7 Amp	Gates	.5 mm	125 Cel	OPEN-DRAIN	-40 Cel	NICKEL PALLADIUM GOLD	BOTTOM	R-PBGA-B6	1	3.6 V	.4 mm	.9 mm	Not Qualified	.8 V			e4	30	260	1.4 mm	AUP/ULP/V
74AUP1G08FX4-7	Diodes Incorporated	AND GATE	AUTOMOTIVE	BALL	6	VFBGA	RECTANGULAR		PLASTIC/EPOXY	NO	YES	1	CMOS		2	TR	3	1.2/3.3	30 pF	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,20	24 ns	1.7 Amp	Gates	.5 mm	125 Cel		-40 Cel	NICKEL PALLADIUM GOLD	BOTTOM	R-PBGA-B6	1	3.6 V	.4 mm	.9 mm	Not Qualified	.8 V			e4	30	260	1.4 mm	AUP/ULP/V
74AUP1G09FX4-7	Diodes Incorporated	AND GATE	AUTOMOTIVE	BALL	6	VFBGA	RECTANGULAR		PLASTIC/EPOXY	YES	YES	1	CMOS		2	TR	3	1.2/3.3	30 pF	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,20	24 ns	1.7 Amp	Gates	.5 mm	125 Cel	OPEN-DRAIN	-40 Cel	NICKEL PALLADIUM GOLD	BOTTOM	R-PBGA-B6	1	3.6 V	.4 mm	.9 mm	Not Qualified	.8 V			e4	30	260	1.4 mm	AUP/ULP/V
74AUP1G14FS3-7	Diodes Incorporated	INVERTER	AUTOMOTIVE	NO LEAD	4	HVSON	SQUARE		PLASTIC/EPOXY	YES	YES	1	CMOS		1	TR	3	1.2/3.3	30 pF	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	LCC5(UNSPEC)	22.5 ns	1.7 Amp	Gates	.48 mm	125 Cel		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	S-PDSO-N4		3.6 V	.35 mm	.8 mm	Not Qualified	.8 V			e4	30	260	.8 mm	AUP/ULP/V
74AUP1G14FX4-7	Diodes Incorporated	INVERTER	AUTOMOTIVE	BALL	6	VFBGA	RECTANGULAR		PLASTIC/EPOXY	YES	YES	1	CMOS		1	TR	3	1.2/3.3	30 pF	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,20	22.5 ns	1.7 Amp	Gates	.5 mm	125 Cel		-40 Cel	NICKEL PALLADIUM GOLD	BOTTOM	R-PBGA-B6	1	3.6 V	.4 mm	.9 mm	Not Qualified	.8 V			e4	30	260	1.4 mm	AUP/ULP/V
74AUP1G17FX4-7	Diodes Incorporated	BUFFER	AUTOMOTIVE	BALL	6	VFBGA	RECTANGULAR		PLASTIC/EPOXY	YES	YES	1	CMOS		1	TR	3	1.2/3.3	30 pF	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,20	20.1 ns	1.7 Amp	Gates	.5 mm	125 Cel		-40 Cel	NICKEL PALLADIUM GOLD	BOTTOM	R-PBGA-B6	1	3.6 V	.4 mm	.9 mm	Not Qualified	.8 V			e4	30	260	1.4 mm	AUP/ULP/V
74AUP1G86FX4-7	Diodes Incorporated	XOR GATE	AUTOMOTIVE	BALL	6	VFBGA	RECTANGULAR		PLASTIC/EPOXY	NO	YES	1	CMOS		2	TR	3	1.2/3.3	30 pF	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,20	26.6 ns	1.7 Amp	Gates	.5 mm	125 Cel		-40 Cel	NICKEL PALLADIUM GOLD	BOTTOM	R-PBGA-B6	1	3.6 V	.4 mm	.9 mm	Not Qualified	.8 V			e4	30	260	1.4 mm	AUP/ULP/V
NLV74HC86ADTR2G	Onsemi	XOR GATE	MILITARY	GULL WING	14	TSSOP	RECTANGULAR		PLASTIC/EPOXY	NO	YES	4	CMOS	AEC-Q100	2	TR	5	2/6	50 pF	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	150 ns	4 Amp	Gates	.65 mm	125 Cel		-55 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G14	1	6 V	1.2 mm	4.4 mm	Not Qualified	2 V			e4	30	260	5 mm	HC/UH
NLVVHC1GT32DFT1G	Onsemi	OR GATE	MILITARY	GULL WING	5	TSSOP	RECTANGULAR		PLASTIC/EPOXY	NO	YES	1	CMOS	AEC-Q100	2	TR	5	3.3/5	50 pF	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP5/6,.08	15.5 ns	8 Amp	Gate	.65 mm	125 Cel		-55 Cel	MATTE TIN	DUAL	R-PDSO-G5	1	5.5 V	1.1 mm	1.25 mm	Not Qualified	3 V	.04 mA		e3	30	260	2 mm	AHC/VHC/H/U/V
NLVVHC1GT32DFT2G	Onsemi	OR GATE	MILITARY	GULL WING	5	TSSOP	RECTANGULAR		PLASTIC/EPOXY	NO	YES	1	CMOS	AEC-Q100	2	TR	5	3.3/5	50 pF	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP5/6,.08	15.5 ns	8 Amp	Gate	.65 mm	125 Cel		-55 Cel	MATTE TIN	DUAL	R-PDSO-G5	1	5.5 V	1.1 mm	1.25 mm	Not Qualified	3 V	.04 mA		e3	30	260	2 mm	AHC/VHC/H/U/V
NL17SG07AMUTCG	Onsemi	INVERTER	MILITARY	NO LEAD	6	VSON	RECTANGULAR		PLASTIC/EPOXY	NO	YES	1	CMOS		1	TR	3	1.2/3.3	30 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,20	20 ns	.3 Amp	Gates	.5 mm	125 Cel	OPEN-DRAIN	-55 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-N6	1	3.6 V	.55 mm	1 mm	Not Qualified	.9 V			e4	30	260	1.45 mm	LVP
NLVVHC1G86DTT1G	Onsemi	XOR GATE	MILITARY	GULL WING	5	TSSOP	RECTANGULAR		PLASTIC/EPOXY	NO	YES	1	CMOS	AEC-Q100	2	TR	5	2/5.5	50 pF	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	19.5 ns	8 Amp	Gates	.95 mm	125 Cel		-55 Cel	MATTE TIN	DUAL	R-PDSO-G5	1	5.5 V	1.1 mm	1.5 mm	Not Qualified	2 V	.04 mA		e3	30	260	3 mm	AHC/VHC/H/U/V
TC74LCX00FT(EL)	Toshiba	NAND GATE										4			2		2.7					6 ns											3.6 V				2 V				NOT SPECIFIED	NOT SPECIFIED
74LV05AT14-13	Diodes Incorporated	INVERTER	AUTOMOTIVE	GULL WING	14	TSSOP	RECTANGULAR		PLASTIC/EPOXY		YES	6	CMOS		1		3.3			SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		19.5 ns			.65 mm	125 Cel	OPEN-DRAIN	-40 Cel	MATTE TIN	DUAL	R-PDSO-G14	1	5.5 V	1.2 mm	4.4 mm		2 V			e3	30	260	5 mm	LV/LV-A/LVX/H
74LV86AS14-13	Diodes Incorporated	XOR GATE	AUTOMOTIVE	GULL WING	14	SOP	RECTANGULAR		PLASTIC/EPOXY		YES	4	CMOS		2		3.3			SMALL OUTLINE		27.5 ns			1.27 mm	125 Cel		-40 Cel	MATTE TIN	DUAL	R-PDSO-G14	1	5.5 V	1.73 mm	3.9 mm		2 V			e3	30	260	8.635 mm	LV/LV-A/LVX/H
SN74LVC1G17DPKR	Texas Instruments	BUFFER	INDUSTRIAL	NO LEAD	5	SON	RECTANGULAR		PLASTIC/EPOXY		YES	1	CMOS		1		3.3			SMALL OUTLINE		11 ns				85 Cel		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-N5	1	5.5 V				1.65 V			e4	30	260		LVC/LCX/Z
74LVC2G06FX4-7	Diodes Incorporated	INVERTER	AUTOMOTIVE	BALL	6	VFBGA	RECTANGULAR		PLASTIC/EPOXY		YES	2	CMOS		1		3.3			GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8.2 ns			.5 mm	125 Cel	OPEN-DRAIN	-40 Cel	NICKEL PALLADIUM GOLD	BOTTOM	R-PBGA-B6	1	5.5 V	.4 mm	.9 mm		1.65 V			e4	30	260	1.4 mm	LVC/LCX/Z
SN74LVC1G02DSF2	Texas Instruments	NOR GATE	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE		PLASTIC/EPOXY		YES	1	CMOS		2		3.3			SMALL OUTLINE, VERY THIN PROFILE		9 ns	32 Amp		.35 mm	125 Cel		-40 Cel	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)	DUAL	S-PDSO-N6	1	5.5 V	.4 mm	1 mm		1.65 V			e4	NOT SPECIFIED	260	1 mm	LVC/LCX/Z
NL17SG00AMUTCG	Onsemi	NAND GATE	MILITARY	NO LEAD	6	VSON	RECTANGULAR		PLASTIC/EPOXY		YES	1	CMOS		2		3			SMALL OUTLINE, VERY THIN PROFILE		24.4 ns			.5 mm	125 Cel		-55 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-N6	1	3.6 V	.55 mm	1 mm		.9 V			e4	30	260	1.45 mm	17SG
NL17SG02AMUTCG	Onsemi	NOR GATE	MILITARY	NO LEAD	6	VSON	RECTANGULAR		PLASTIC/EPOXY		YES	1	CMOS		2		3			SMALL OUTLINE, VERY THIN PROFILE		20.3 ns			.5 mm	125 Cel		-55 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-N6	1	3.6 V	.55 mm	1 mm		.9 V			e4	30	260	1.45 mm	17SG
NL17SG04CMUTCG	Onsemi	INVERTER	MILITARY	NO LEAD	6	VSON	SQUARE		PLASTIC/EPOXY	NO	YES	1	CMOS		1	TR	3	1.2/3.3	30 pF	SMALL OUTLINE, VERY THIN PROFILE	SOLCC6,.04,14	22.3 ns	.3 Amp	Gates	.35 mm	125 Cel		-55 Cel	Nickel/Gold/Palladium (Ni/Au/Pd)	DUAL	S-PDSO-N6	1	3.6 V	.55 mm	1 mm	Not Qualified	.9 V				30	260	1 mm	17SG
NL17SG17AMUTCG	Onsemi	BUFFER	MILITARY	NO LEAD	6	VSON	RECTANGULAR		PLASTIC/EPOXY		YES	1	CMOS		1		3			SMALL OUTLINE, VERY THIN PROFILE		58.1 ns			.5 mm	125 Cel		-55 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-N6	1	3.6 V	.55 mm	1 mm		.9 V			e4	30	260	1.45 mm	17SG
NL17SG17DFT2G	Onsemi	BUFFER	MILITARY	GULL WING	5	TSSOP	RECTANGULAR		PLASTIC/EPOXY		YES	1	CMOS		1		3			SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		58.1 ns			.65 mm	125 Cel		-55 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G5	1	3.6 V	1.1 mm	1.25 mm		.9 V			e3	30	260	2 mm	17SG
74AUP2G04FW3-7	Diodes Incorporated	INVERTER	AUTOMOTIVE	NO LEAD	6	SON	RECTANGULAR		PLASTIC/EPOXY		YES	2	CMOS		1		3			SMALL OUTLINE		23 ns			.3 mm	125 Cel		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-N6	1	3.6 V	.35 mm	.9 mm		.8 V			e4	30	260	1 mm	AUP/ULP/V
74AUP2G06FW4-7	Diodes Incorporated	INVERTER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE		PLASTIC/EPOXY		YES	2	CMOS		1		3			SMALL OUTLINE, VERY THIN PROFILE		25.8 ns			.35 mm	125 Cel	OPEN-DRAIN	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	S-PDSO-N6	1	3.6 V	.4 mm	1 mm		.8 V			e4	30	260	1 mm	AUP/ULP/V
74AUP2G07FW3-7	Diodes Incorporated	BUFFER	AUTOMOTIVE	NO LEAD	6	SON	RECTANGULAR		PLASTIC/EPOXY		YES	2	CMOS		1		3			SMALL OUTLINE		25.8 ns			.3 mm	125 Cel	OPEN-DRAIN	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-N6	1	3.6 V	.35 mm	.9 mm		.8 V			e4	30	260	1 mm	AUP/ULP/V
74AUP2G07FZ4-7	Diodes Incorporated	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	RECTANGULAR		PLASTIC/EPOXY		YES	2	CMOS		1		3			SMALL OUTLINE, VERY THIN PROFILE		25.8 ns			.5 mm	125 Cel	OPEN-DRAIN	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-N6	1	3.6 V	.4 mm	1 mm		.8 V			e4	30	260	1.4 mm	AUP/ULP/V
74AUP2G17FW4-7	Diodes Incorporated	BUFFER	AUTOMOTIVE	NO LEAD	6	VSON	SQUARE		PLASTIC/EPOXY		YES	2	CMOS		1		3			SMALL OUTLINE, VERY THIN PROFILE		20 ns			.35 mm	125 Cel		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	S-PDSO-N6	1	3.6 V	.4 mm	1 mm		.8 V			e4	30	260	1 mm	AUP/ULP/V
SN54F00J	Texas Instruments	NAND GATE	MILITARY	THROUGH-HOLE	14	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	NO	4	TTL		2	TUBE	5	5	50 pF	IN-LINE	DIP14,.3	6.5 ns	1 Amp	Gates	2.54 mm	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T14		5.5 V	5.08 mm	7.62 mm	Not Qualified	4.5 V	10.2 mA		e0	NOT SPECIFIED	NOT SPECIFIED	19.56 mm	F/FAST
SN54F02J	Texas Instruments	NOR GATE	MILITARY	THROUGH-HOLE	14	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	NO	4	TTL		2	TUBE	5	5	50 pF	IN-LINE	DIP14,.3	6.5 ns	1 Amp	Gates	2.54 mm	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T14		5.5 V	5.08 mm	7.62 mm	Not Qualified	4.5 V	13 mA		e0	NOT SPECIFIED	NOT SPECIFIED	19.56 mm	F/FAST
SN54F10J	Texas Instruments	NAND GATE	MILITARY	THROUGH-HOLE	14	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	NO	3	TTL		3	TUBE	5	5	50 pF	IN-LINE	DIP14,.3	6.5 ns	1 Amp	Gates	2.54 mm	125 Cel		-55 Cel	TIN LEAD	DUAL	R-GDIP-T14		5.5 V	5.08 mm	6.67 mm	Not Qualified	4.5 V	7.7 mA		e0			19.56 mm	F/FAST
SN54F11J	Texas Instruments	AND GATE	MILITARY	THROUGH-HOLE	14	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	NO	3	TTL		3	TUBE	5	5	50 pF	IN-LINE	DIP14,.3	7.5 ns	20 Amp	Gates	2.54 mm	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T14		5.5 V	5.08 mm	7.62 mm	Not Qualified	4.5 V	9.7 mA		e0	NOT SPECIFIED	NOT SPECIFIED	19.56 mm	F/FAST
SN74F51N	Texas Instruments	AND-OR-INVERT GATE	COMMERCIAL	THROUGH-HOLE	14	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	NO	2	TTL		6		5	5	50 pF	IN-LINE	DIP14,.3	4.5 ns	20 Amp	Gates	2.54 mm	70 Cel		0 Cel		DUAL	R-PDIP-T14		5.5 V	5.08 mm	7.62 mm	Not Qualified	4.5 V	7.5 mA	ASYMMETRICAL INPUTS		NOT SPECIFIED	NOT SPECIFIED	19.305 mm	F/FAST
5422W	Texas Instruments	NAND GATE	MILITARY	FLAT	14	DFP	RECTANGULAR		CERAMIC, GLASS-SEALED		YES	2	TTL		4		5		15 pF	FLATPACK		15 ns			1.27 mm	125 Cel	OPEN-COLLECTOR	-55 Cel		DUAL	R-GDFP-F14		5.5 V	2.03 mm	6.29 mm	Not Qualified	4.5 V	11 mA					9.21 mm	TTL/H/L
HCF4001BEY	STMicroelectronics	NOR GATE	MILITARY	THROUGH-HOLE	14	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	NO	4	CMOS		2	TUBE	5	5/15	50 pF	IN-LINE	DIP14,.3	200 ns		Gates	2.54 mm	125 Cel		-55 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDIP-T14		20 V	5.1 mm	7.62 mm	Not Qualified	3 V			e4				4000/14000/40000
HCF40106BEY	STMicroelectronics	INVERTER	MILITARY	THROUGH-HOLE	14	DIP	RECTANGULAR		PLASTIC/EPOXY	YES	NO	6	CMOS		1	TUBE	5	5/15	50 pF	IN-LINE	DIP14,.3	280 ns		Gates	2.54 mm	125 Cel		-55 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDIP-T14		20 V	5.1 mm	7.62 mm	Not Qualified	3 V			e4				4000/14000/40000
HCF40107BEY	STMicroelectronics	NAND GATE	MILITARY	THROUGH-HOLE	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	NO	2	CMOS		2	TUBE	5	5/15	50 pF	IN-LINE	DIP8,.3	200 ns		Gates	2.54 mm	125 Cel	OPEN-DRAIN	-55 Cel	MATTE TIN	DUAL	R-PDIP-T8		20 V	4.8 mm	7.62 mm	Not Qualified	3 V			e3				4000/14000/40000

Logic Gates

Logic gates are electronic circuits that perform basic logical operations on one or more inputs to produce a single output. They are the building blocks of digital circuits and are used to implement digital logic functions, such as AND, OR, NOT, XOR, and NAND.

Logic gates are designed using various technologies, including transistor-transistor logic (TTL), complementary metal-oxide-semiconductor (CMOS), and field-programmable gate arrays (FPGAs). They can be classified into three main types based on their operation: combinational logic gates, sequential logic gates, and programmable logic gates.

Combinational logic gates are logic gates that produce an output based solely on the current input values. These gates include the AND gate, OR gate, NOT gate, XOR gate, and NAND gate. The output of a combinational logic gate depends on the input values and the logic function implemented by the gate.

Sequential logic gates are logic gates that have memory elements and can store information. These gates include the SR flip-flop, D flip-flop, JK flip-flop, and T flip-flop. The output of a sequential logic gate depends on the current input values and the previous state of the gate.

Programmable logic gates are logic gates that can be programmed to implement different logic functions. These gates include programmable logic arrays (PLAs), programmable array logic (PALs), and field-programmable gate arrays (FPGAs). Programmable logic gates can be reprogrammed to adapt to changing system requirements.

Logic gates are used in various applications, including digital signal processing, control systems, and memory systems. They are essential components of digital systems and can be found in many electronic devices, such as computers, mobile phones, and digital cameras.