DDR1 DRAM DRAM 227

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
IS43R16800E-6TLI	Integrated Silicon Solution	DDR1 DRAM	INDUSTRIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	220 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	167 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH				.003 Amp	2,4,8	22.22 mm	.7 ns
UPD48288118AFF-E24-DW1-A	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			SEPARATE	1.8	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	16MX18	16M	0 Cel	TIN BISMUTH	BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6				2,4,8	18.5 mm	.3 ns
UPD48288118AFF-E24-DW1	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			SEPARATE	1.8	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V		NOT SPECIFIED	NOT SPECIFIED		2,4,8	18.5 mm	.3 ns
MT46H64M32LFCX-6IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		9 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			13 mm	5 ns
MT46V16M16CY-5B:M	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	175 mA	16777216 words	2,4,8	YES	COMMON	2.6	2.6	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e1			.004 Amp	2,4,8	12.5 mm	.7 ns
MT46V16M16P-5B:M	Micron Technology	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	175 mA	16777216 words	2,4,8	YES	COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G66	3	2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e3	30	260	.004 Amp	2,4,8	22.22 mm	.7 ns
MT46V16M16P-5BIT:M	Micron Technology	DDR1 DRAM	INDUSTRIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	175 mA	16777216 words	2,4,8	YES	COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e3	30	260	.004 Amp	2,4,8	22.22 mm	.7 ns
MT46V16M16TG-5BIT:M	Micron Technology	DDR1 DRAM	INDUSTRIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		2.6		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel		16MX16	16M	-40 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm		268435456 bit	2.5 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
MT46V32M8P-5BL:M	Micron Technology	DDR1 DRAM		66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	33554432 words	2,4,8	YES	COMMON	2.6		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46		.65 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm		268435456 bit	2.5 V	AUTO/SELF REFRESH	e3	30	260	.004 Amp	2,4,8	22.22 mm	.7 ns
IS43LR32160C-6BLI	Integrated Silicon Solution	DDR1 DRAM	INDUSTRIAL	90	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	130 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1.2 mm	166 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH				.00001 Amp	2,4,8,16	13 mm	5.5 ns
MT46H128M32L2KQ-5IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H256M32L4JV-5WT:B	Micron Technology	DDR1 DRAM	OTHER	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	268435456 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX32	256M	-25 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168		1.95 V	1 mm	200 MHz	12 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	12 mm	5 ns
MT46H128M16LFB7-6IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B60		1.95 V	1 mm		10 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					10 mm	5 ns
MT46V64M8BN-6IT:FTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64MX8	64M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1	30	260			12.5 mm	.7 ns
MT46V128M4FN-6:FTR	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX4	128M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					12.5 mm	.7 ns
MT46H16M32LFCM-5IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	16777216 words	2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	200 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8	13 mm	5 ns
MT46H32M16LFBF-5IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	130 mA	33554432 words	2,4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	200 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8	9 mm	5 ns
MT46H16M32LFCM-6LIT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			13 mm	6 ns
MT46H64M16LFCK-5IT:A	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	130 mA	67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	200 MHz	10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	11.5 mm	5 ns
MT46H64M16LFCK-5LIT:A	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	130 mA	67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	200 MHz	10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	11.5 mm	5 ns
CBTV4020EE/G,118	NXP Semiconductors	DDR1 DRAM		72			SQUARE	PLASTIC/EPOXY		YES			GULL WING										SMALL OUTLINE										DUAL		S-PDSO-G72						Not Qualified
MT46H16M16LFBF-6IT:ATR	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					9 mm	5 ns
MT46H16M32LFCM-6IT:BTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	6 ns
MT46H32M16LFBF-6IT:BTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					9 mm	6 ns
MT46V16M16P-5BIT:KTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		2.6		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel		16MX16	16M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e3					22.22 mm	.7 ns
MT46V32M16P-5B:FTR	Micron Technology	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.6		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		32MX16	32M	0 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	.7 ns
MT46V32M16P-5BIT:FTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.6		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel		32MX16	32M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e3					22.22 mm	.7 ns
MT46V32M16P-6T:FTR	Micron Technology	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		32MX16	32M	0 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G66	3	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	.7 ns
MT46V32M16TG-6T:FTR	Micron Technology	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		32MX16	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					22.22 mm	.7 ns
MT46V32M8P-6T:GTR	Micron Technology	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		32MX8	32M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G66	3	2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	.7 ns
MT46V64M8FN-6IT:FTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64MX8	64M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					12.5 mm	.7 ns
MT46V64M8P-6T:DTR	Micron Technology	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		64MX8	64M	0 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G66	3	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	.7 ns
MT46V64M8P-6T:FTR	Micron Technology	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		64MX8	64M	0 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G66	3	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	.7 ns
MT46H128M16LFB7-5IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B60		1.95 V	1 mm		10 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					10 mm	5 ns
MT46H128M32L2KQ-6IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H256M32L4JV-5IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX32	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H256M32L4JV-6WT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX32	256M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168		1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H64M32LFCX-5IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		9 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5 ns
MT46H64M32LFMA-5IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		64MX32	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.7 mm		12 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H16M32LFB5-6AT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5 ns
MT46H16M32LFB5-6IT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	105 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	166 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	13 mm	5 ns
MT46H32M16LFBF-6AT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					9 mm	5 ns
MT46H32M16LFBF-6IT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	166 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	9 mm	5 ns
MT46V32M8P-5BIT:K	Micron Technology	DDR1 DRAM	INDUSTRIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.6	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e3			.004 Amp	2,4,8	22.22 mm	.7 ns
MT46H4M32LFB5-5IT:K	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	4194304 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	200 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	13 mm	5 ns
MT46H4M32LFB5-6IT:K	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	100 mA	4194304 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	166 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	13 mm	5 ns
MT46H8M16LFBF-5:K	Micron Technology	DDR1 DRAM	COMMERCIAL	60	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	95 mA	8388608 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	200 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	9 mm	5 ns
MT46H8M16LFBF-5IT:K	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	95 mA	8388608 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	200 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	9 mm	5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.