DDR3 DRAM DRAM 74

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT41J512M8THU-187E:A	Micron Technology	DDR3 DRAM	OTHER	82	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	445 mA	536870912 words		YES	COMMON	1.5	1.5	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm	533 MHz	12.5 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1			.035 Amp		15 mm
MT41J64M16TW-093:J	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M		0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		8 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH						14 mm
W632GG6NB-12	Winbond Electronics	DDR3 DRAM	OTHER	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words				1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	95 Cel		128MX16	128M		0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
W632GG6NB12I	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words				1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	95 Cel		128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
W632GG6NB12J	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words				1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
IS43TR16256B-125KBLI-TR	Integrated Silicon Solution	DDR3 DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	276 mA	268435456 words	4,8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		256MX16	256M	1.425 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm	800 MHz	9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1	10	260	.029 Amp	4,8	13 mm
IS43TR16256A-125KBLI-TR	Integrated Silicon Solution	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4, 8		COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	1.425 V	-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH				.057 Amp	4, 8	13 mm
MT44K16M36RB-093E:BTR	Micron Technology	DDR3 DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2840 mA	16777216 words	2,4	YES	COMMON	1.35		36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40		1 mm	100 Cel	3-STATE	16MX36	16M		0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm	1075 MHz	13.5 mm		603979776 bit	1.28 V		e1			.225 Amp	2,4	13.5 mm
MT44K16M36RB-093EIT:BTR	Micron Technology	DDR3 DRAM	INDUSTRIAL	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2840 mA	16777216 words	2,4	YES	COMMON	1.35		36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40		1 mm	100 Cel	3-STATE	16MX36	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm	1075 MHz	13.5 mm		603979776 bit	1.28 V		e1	30	260	.225 Amp	2,4	13.5 mm
MT41J64M16JT-15EIT:GTR	Micron Technology	DDR3 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			64MX16	64M			Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		8 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260			14 mm	.125 ns
IS43TR16128C-15HBL	Integrated Silicon Solution	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	e1	10	260			13 mm
MT8KTF51264AZ-1G9P1	Micron Technology	DDR3 DRAM	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX64	512M		0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		2.7 mm		34359738368 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
MT18KSF1G72PDZ-1G6P1	Micron Technology	DDR3 DRAM	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G		0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			133.35 mm
MT41J128M16HA-15E:DTR	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT41J256M16HA-093:ETR	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT41J512M8RH-093:ETR	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1					10.5 mm
AS4C256M16D3A-12BIN	Alliance Memory	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96	3	1.575 V	1 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH						13 mm
AS4C256M16D3B-12BIN	Alliance Memory	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT41J256M16HA-125:ETR	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		256MX16	256M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260			14 mm
AS4C256M16D3B-12BINTR	Alliance Memory	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	55 mA	268435456 words	4,8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	1.425 V	-40 Cel		BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm	800 MHz	9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH				.032 Amp	4,8	13.5 mm
IS46TR16640CL-107MBLA2	Integrated Silicon Solution	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	105 Cel		64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH						13 mm
W631GG6NB-12	Winbond Electronics	DDR3 DRAM	OTHER	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	220 mA	67108864 words	8	YES	COMMON	1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	64MX16	64M		0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm	800 MHz	7.5 mm		1073741824 bit	1.425 V					.04 Amp	8	13 mm	20 ns
W631GG6NB09I	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	270 mA	67108864 words	8	YES	COMMON	1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm	1066 MHz	7.5 mm		1073741824 bit	1.425 V					.05 Amp	8	13 mm	20 ns
W631GG6NB12I	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	220 mA	67108864 words	8	YES	COMMON	1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm	800 MHz	7.5 mm		1073741824 bit	1.425 V					.04 Amp	8	13 mm	20 ns
W631GG6NB11I	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	240 mA	67108864 words	8	YES	COMMON	1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm	933 MHz	7.5 mm		1073741824 bit	1.425 V					.045 Amp	8	13 mm	20 ns
W631GG6NB-09	Winbond Electronics	DDR3 DRAM	OTHER	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	270 mA	67108864 words	8	YES	COMMON	1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	64MX16	64M		0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm	1066 MHz	7.5 mm		1073741824 bit	1.425 V					.05 Amp	8	13 mm	20 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.