DDR4 DRAM MODULE DRAM 47

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length
MTA9ASF51272AZ-2G1A1	Micron Technology	DDR4 DRAM MODULE	OTHER	284	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		512MX72	512M		0 Cel	DUAL	1	R-XDMA-N284	1.26 V	31.38 mm		2.61 mm	38654705664 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ADF2G72PDZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,24	.6 mm	95 Cel		2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	18.9 mm	1600 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.25 mm
MTA36ASF2G72PZ-2G6F1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8		COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,24		95 Cel		2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1333 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA16ATF2G64AZ-3G2J1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel		2GX64	2G	1.14 V	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1612 MHz	3.9 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED		8	133.35 mm
MTA16ATF2G64HZ-3G2J1	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel		2GX64	2G		0 Cel	DUAL	1	R-XDMA-N260	1.26 V	30.13 mm		3.7 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					69.6 mm
MTA4ATF51264AZ-3G2J1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	4,8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,24	.6 mm	95 Cel		512MX64	512M	1.14 V	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1612.903 MHz	2.7 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED		4,8	133.35 mm
MTA9ASF2G72PZ-3G2B1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES			72	MICROELECTRONIC ASSEMBLY			95 Cel		2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288		31.4 mm		3.9 mm	154618822656 bit		AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ASF2G72PZ-3G2J3	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1600 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA16ATF4G64AZ-3G2B1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words					64	MICROELECTRONIC ASSEMBLY			95 Cel		4GX64	4G		0 Cel	DUAL	1	R-XDMA-N288					274877906944 bit
MTA4ATF1G64AZ-3G2B1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words					64	MICROELECTRONIC ASSEMBLY			95 Cel		1GX64	1G		0 Cel	DUAL	1	R-XDMA-N288					68719476736 bit
MTA9ASF1G72PZ-2G6B1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	1GX72	1G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1333 MHz	3.9 mm	77309411328 bit	1.14 V					8	133.35 mm
MTA18ASF2G72PZ-2G6D1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3600 mA	2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1333 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.45 Amp	8	133.35 mm
MTA18ASF2G72PKTZ-2G6B1	Micron Technology	DDR4 DRAM MODULE	INDUSTRIAL	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel		2GX72	2G		-40 Cel	DUAL	1	R-XDMA-N288	1.26 V	30.15 mm		4 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					80 mm
MTA18ASF2G72PDZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1600 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA18ASF2G72XF1Z-2G6V21AB	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel		2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		5.8 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED			133.35 mm
MTA36ASF8G72PZ-3G2B2	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel		8GX72	8G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	618475290624 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA4ATF1G64HZ-3G2B1	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES	COMMON		64	MICROELECTRONIC ASSEMBLY			95 Cel		1GX64	1G		0 Cel	DUAL	1	R-XDMA-N260			1600 MHz		68719476736 bit		AUTO/SELF REFRESH
MTA9ASF1G72PZ-3G2E2	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1710 mA	1073741824 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	1GX72	1G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1612 MHz	3.9 mm	77309411328 bit	1.14 V				.198 Amp	8	133.35 mm
MTA8ATF2G64HZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES			64	MICROELECTRONIC ASSEMBLY			95 Cel		2GX64	2G		0 Cel	DUAL	1	R-XDMA-N260					137438953472 bit		AUTO/SELF REFRESH
MTA18ASF2G72PDZ-3G2J3	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1600 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA72ASS16G72PSZ-3S2B1	Micron Technology	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS		17179869184 words			COMMON	1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel		16GX72	16G		0 Cel	DUAL		R-XDMA-N288			1600 MHz		1236950581248 bit
MTA18ASF2G72HBZ-3G2E1	Micron Technology	DDR4 DRAM MODULE		260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1989 mA	2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			105 Cel		2GX72	2G		-40 Cel	ZIG-ZAG	1	R-XZMA-N260		30.15 mm	1600 MHz	3.7 mm	154618822656 bit		AUTO/SELF REFRESH; WD-MAX			.468 Amp		69.6 mm
MTA4ATF1G64HZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES	COMMON		64	MICROELECTRONIC ASSEMBLY			95 Cel		1GX64	1G		0 Cel	DUAL	1	R-XDMA-N260			1600 MHz		68719476736 bit		AUTO/SELF REFRESH	30	260
MTA16ATF4G64HZ-3G2E1	Micron Technology	DDR4 DRAM MODULE		260	DIMM			UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1808 mA	4294967296 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel		4GX64	4G		0 Cel	DUAL	1	R-XDMA-N260			1600 MHz		274877906944 bit		AUTO/SELF REFRESH			.608 Amp
MTA36ASF8G72LZ-3G2B1	Micron Technology	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5058 mA	8589934592 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel		8GX72	8G		0 Cel	DUAL	1	R-XDMA-N288			1600 MHz		618475290624 bit		AUTO/SELF REFRESH			1.548 Amp
MTA18ASF2G72HZ-2G6E1	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1881 mA	2147483648 words	4,8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel	3-STATE	2GX72	2G		0 Cel	DUAL	1	R-XDMA-N260	1.26 V	30.15 mm	1333 MHz	3.7 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.45 Amp	4,8	69.6 mm
MTA8ATF2G64HZ-3G2E2	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1480 mA	2147483648 words		YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM260,20	.5 mm	95 Cel		2GX64	2G		0 Cel	DUAL	1	R-XDMA-N260		30.15 mm	1600 MHz	3.7 mm	137438953472 bit		AUTO/SELF REFRESH; WD-MAX			.304 Amp		69.6 mm
MTA36ASF4G72PZ-2G6B2	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3996 mA	4294967296 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	4GX72	4G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1333 MHz	3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.792 Amp	8	133.35 mm
MTA9ASF1G72PZ-2G9E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1665 mA	1073741824 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	1GX72	1G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1466 MHz	3.9 mm	77309411328 bit	1.14 V				.198 Amp	8	133.35 mm
MTA18ASF2G72PZ-2G9E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3870 mA	2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1466 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.396 Amp	8	133.35 mm
MTA36ASF4G72PZ-3G2E7	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4536 mA	4294967296 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	4GX72	4G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1612 MHz	3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.792 Amp	8	133.35 mm
MTA8ATF1G64AZ-2G3A1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel		1GX64	1G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1204 MHz	2.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA8ATF1G64AZ-2G6E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel		1GX64	1G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1333 MHz	2.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA8ATF1G64AZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel		1GX64	1G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1612 MHz	2.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA18ASF2G72PDZ-2G6E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1333 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA18ASF2G72PDZ-2G9E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1466 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA18ASF2G72PZ-3G2E2	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4140 mA	2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1600 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.396 Amp	8	133.35 mm
MTA18ASF2G72PDZ-2G3D1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1204 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA36ASF4G72PZ-2G3D1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	4GX72	4G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1204 MHz	3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				8	133.35 mm
MTA36ASF4G72PZ-2G9E2	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4266 mA	4294967296 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	4GX72	4G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.55 mm	1466 MHz	3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.792 Amp	8	133.35 mm
MTA18ADF2G72AZ-3G2R1	Micron Technology	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1737 mA	2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel		2GX72	2G		0 Cel	DUAL	1	R-XDMA-N288	1.26 V	18.9 mm	1612.9 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.54 Amp	8	133.35 mm
MTA8ATF2G64AZ-3G2F1	Micron Technology	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1336 mA	2147483648 words		YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel		2GX64	2G		0 Cel	DUAL	1	R-XDMA-N288		31.25 mm	1600 MHz		137438953472 bit		AUTO/SELF REFRESH			.304 Amp		133.35 mm
MTA18ASF4G72AZ-3G2F1	Micron Technology	DDR4 DRAM MODULE		288				UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES			72				95 Cel		4GX72	4G		0 Cel	DUAL	1	R-XDMA-N288			1600 MHz		309237645312 bit		AUTO/SELF REFRESH
MTA18ADF4G72PZ-3G2F1	Micron Technology	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1845 mA	4294967296 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel		4GX72	4G		0 Cel	DUAL	1	R-XDMA-N288			1600 MHz		309237645312 bit		AUTO/SELF REFRESH			.756 Amp
MTA18ASF4G72HZ-3G2F1	Micron Technology	DDR4 DRAM MODULE		260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1845 mA	4294967296 words		YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel		4GX72	4G		0 Cel	ZIG-ZAG	1	R-XZMA-N260		30.15 mm	1612.9 MHz	3.7 mm	309237645312 bit		AUTO/SELF REFRESH; WD-MAX			.684 Amp		69.6 mm
MTA16ATF4G64HZ-3G2F1	Micron Technology	DDR4 DRAM MODULE		260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES			64	MICROELECTRONIC ASSEMBLY	DIMM260,20	.5 mm	95 Cel		4GX64	4G		0 Cel	DUAL	1	R-XDMA-N260		30.15 mm		3.7 mm	274877906944 bit		AUTO REFRESH AND SELF REFRESH; WIDTH MAX					69.6 mm
MTA36ASF4G72PBZ-3G2E1	Micron Technology	DDR4 DRAM MODULE		288	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		SYNCHRONOUS	4698 mA	4294967296 words		YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY			105 Cel		4GX72	4G		-40 Cel	DUAL	1	R-XDMA-N288	1.26 V		1600 MHz		309237645312 bit	1.14 V				.72 Amp

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.