SYNCHRONOUS DRAM DRAM 387

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT48LC32M8A2P-75IT:DTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		33554432 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		32MX8	32M	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48H16M16LFBF-75:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54		1.95 V	1 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					9 mm	6 ns
MT48LC32M16A2P-75:CTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		33554432 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		32MX16	32M	0 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48LC4M32LFB5-8IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		3.6 V	1 mm		8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e1					13 mm	7 ns
MT48H16M32LFCM-6IT:B	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	105 mA	16777216 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	166 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	1,2,4,8	13 mm	5 ns
MT48H32M16LFBF-6:B	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	100 mA	33554432 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54		1.95 V	1 mm	166 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	1,2,4,8	9 mm	5 ns
MT48H16M32LFCM-75IT:ATR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	6 ns
MT48H8M16LFB4-8ITTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1					8 mm	7 ns
MT48H8M16LFB4-8IT:JTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1					8 mm	6 ns
MT48LC16M16A2BG-75IT:DTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54		3.6 V	1 mm		8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e1					14 mm	5.4 ns
MT48LC16M16A2FG-75IT:DTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B54		3.6 V	1 mm		8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0					14 mm	5.4 ns
MT48LC16M16A2P-75IT:DTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	270 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC16M16A2TG-75IT:DTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	270 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC16M16A2TG-7E:DTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.4 ns
MT48LC16M8A2TG-75:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.4 ns
MT48LC2M32B2TG-6:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel		2MX32	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	30	235			22.22 mm	5.5 ns
MT48LC4M16A2P-75IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		4MX16	4M	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48LC4M16A2TG-75:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	30	235			22.22 mm	5.4 ns
MT48LC4M16A2TG-7E:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.4 ns
MT48LC4M32B2F5-7IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		3.6 V	1 mm		8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0					13 mm	5.5 ns
MT48LC4M32B2TG-7:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		4MX32	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.5 ns
MT48LC4M32B2TG-7IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel		4MX32	4M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.5 ns
MT48LC4M32LFF5-8IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		3.6 V	1 mm		8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0					13 mm	7 ns
MT48LC8M16A2P-75IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		8MX16	8M	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48LC8M16A2TG-75:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		8MX16	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.4 ns
MT48LC8M16A2TG-75IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		8MX16	8M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.4 ns
MT48LC8M16A2TG-7E:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		8MX16	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.4 ns
MT48LC8M8A2TG-75:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.4 ns
IS42S16160J-6BL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	54	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		3.6 V	1.2 mm		8 mm		268435456 bit	3 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	e1		260			8 mm	5.4 ns
IS42S16160J-7BL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	54	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		3.6 V	1.2 mm		8 mm		268435456 bit	3 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	e1		260			8 mm	5.4 ns
IS42S32800J-7BL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	90	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	170 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32		.8 mm	70 Cel	3-STATE	8MX32	8M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.2 mm	143 MHz	8 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e1	10	260	.004 Amp	1,2,4,8	13 mm	5.4 ns
IS42S32800J-7TL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	170 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3		32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		.5 mm	70 Cel	3-STATE	8MX32	8M	0 Cel	Tin (Sn)	DUAL	1	R-PDSO-G86	3	3.6 V	1.2 mm	143 MHz	10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e3	10	260	.004 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC16M8A2BB-6AAAT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words		YES		3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	105 Cel		16MX8	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		3.6 V	1.2 mm		8 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e1	30	260			16 mm	5.4 ns
MT48LC16M8A2BB-6AAIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX8	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		3.6 V	1.2 mm		8 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e1	30	260			16 mm	5.4 ns
MT48LC16M8A2P-6AAIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		16MX8	16M	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48LC8M16A2B4-6AAIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words		YES		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B54		3.6 V	1 mm		8 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e1	30	260			8 mm	5.4 ns
MT48LC8M16A2P-6AAIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		8MX16	8M	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48LC32M16A2P-75IT:CTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		33554432 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		32MX16	32M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.4 ns
MT48H4M32LFB5-6IT:K	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	100 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	166 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1			.0002 Amp	1,2,4,8	13 mm	5 ns
MT48H4M32LFB5-75:K	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	90 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	133 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1			.0002 Amp	1,2,4,8	13 mm	5.4 ns
MT48H4M32LFB5-75IT:K	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	90 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	133 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1			.0002 Amp	1,2,4,8	13 mm	5.4 ns
MT48H8M16LFB4-6IT:K	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	80 mA	8388608 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		1.95 V	1 mm	166 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1			.0002 Amp	1,2,4,8	8 mm	5 ns
MT48H8M16LFB4-75:K	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	70 mA	8388608 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		1.95 V	1 mm	133 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1			.0002 Amp	1,2,4,8	8 mm	5.4 ns
MT48H8M16LFB4-75IT:K	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	70 mA	8388608 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		1.95 V	1 mm	133 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.0002 Amp	1,2,4,8	8 mm	5.4 ns
MT48H4M16LFB4-8IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	80 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		1.9 V	1 mm	125 MHz	8 mm	Not Qualified	67108864 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.00001 Amp	1,2,4,8	8 mm	6 ns
MT48H4M16LFB4-8	Micron Technology	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	80 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		1.9 V	1 mm	125 MHz	8 mm	Not Qualified	67108864 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.00001 Amp	1,2,4,8	8 mm	6 ns
MT48H4M16LFF4-10IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	80 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54		1.9 V	1 mm	104 MHz	8 mm	Not Qualified	67108864 bit	1.7 V	AUTO/SELF REFRESH	e0			.00001 Amp	1,2,4,8	8 mm	7 ns
MT48H4M16LFF4-10	Micron Technology	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	80 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54		1.9 V	1 mm	104 MHz	8 mm	Not Qualified	67108864 bit	1.7 V	AUTO/SELF REFRESH	e0			.00001 Amp	1,2,4,8	8 mm	7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.