SYNCHRONOUS DRAM MODULE DRAM 16

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT16LSDF6464HG-13ED2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4560 mA	67108864 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N144				143 MHz		Not Qualified	4294967296 bit						.032 Amp		5.4 ns
MT9LSDT1672G-133G2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2790 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	55 Cel	3-STATE	16MX72	16M	0 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	1207959552 bit						.018 Amp		5.4 ns
MT8LSDT1664AY-133G3	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2480 mA	16777216 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	1073741824 bit						.016 Amp		5.4 ns
MT16LSDT3264AY-133G3	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4960 mA	33554432 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	2147483648 bit						.032 Amp		5.4 ns
MT18HTS25672RHZ-80EH1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3123 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	256MX72	256M	0 Cel	MATTE TIN	ZIG-ZAG	1	R-XZMA-N200	1	1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e3				67.6 mm	.4 ns
MT16LSDF6464HY-13EG1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY			.8 mm	65 Cel		64MX64	64M	0 Cel	Gold (Au)	ZIG-ZAG	1	R-XZMA-N144		3.6 V	31.88 mm		3.8 mm		4294967296 bit	3 V	AUTO/SELF REFRESH; WD-MAX	e4	30	260		67.585 mm	5.4 ns
MT16LSDF3264HY-13EG4	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				65 Cel		32MX64	32M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N144		3.6 V	31.88 mm		3.8 mm		2147483648 bit	3 V	AUTO/SELF REFRESH; WD-MAX	e4				67.585 mm	5.4 ns
MT4LSDT864HG-13EG2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				65 Cel		8MX64	8M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-N144		3.6 V	25.53 mm		3.8 mm		536870912 bit	3 V	AUTO/SELF REFRESH; WD-MAX	e0				67.585 mm	5.4 ns
MT4LSDT864HY-133G2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				65 Cel		8MX64	8M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N144		3.6 V	25.53 mm		3.8 mm		536870912 bit	3 V	AUTO/SELF REFRESH; WD-MAX	e4				67.585 mm	5.4 ns
MT16LSDT6464AY-13ED2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH	e4					5.4 ns
MT16LSDF6464HY-133D2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				65 Cel		64MX64	64M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N144		3.6 V	3.8 mm		31.75 mm	Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH	e4				67.585 mm	5.4 ns
MT8LSDT6464HIY-133C1	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				85 Cel		64MX64	64M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N144		3.6 V	3.8 mm		31.75 mm	Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH	e4				67.585 mm	5.4 ns
MT36LSDF12872G-133D1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	9663676416 bit	3 V	AUTO/SELF REFRESH	e0					5.4 ns
MT18LSDT6472G-133D2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY				55 Cel		64MX72	64M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH	e0					5.4 ns
MT16LSDF6464HY-133G1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY			.8 mm	65 Cel		64MX64	64M	0 Cel		ZIG-ZAG	1	R-XZMA-N144		3.6 V	31.88 mm		3.8 mm		4294967296 bit	3 V	AUTO/SELF REFRESH; WD-MAX		30	260		67.585 mm	5.4 ns
MT4LSDT1664AY-13ED1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY			1.27 mm	65 Cel		16MX64	16M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	25.53 mm		3.18 mm		1073741824 bit	3 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED		133.125 mm	5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.