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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT8VDDT6464AY-40BF4	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3600 mA	67108864 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M		DUAL		R-PDMA-N184			200 MHz		Not Qualified	4294967296 bit						.04 Amp		.7 ns
MT18VDDF12872G-40BD3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		8100 mA	134217728 words		COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M		DUAL		R-PDMA-N184			200 MHz		Not Qualified	9663676416 bit						.09 Amp		.7 ns
MT18VDDF12872Y-40BF1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		8100 mA	134217728 words		COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M		DUAL		R-PDMA-N184			200 MHz		Not Qualified	9663676416 bit						.09 Amp		.7 ns
MT36VDDF25672Y-40BF3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		12420 mA	268435456 words		COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	256MX72	256M		DUAL		R-PDMA-N184			200 MHz		Not Qualified	19327352832 bit						.18 Amp		.7 ns
MT4VDDT3264AY-40BF1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1920 mA	33554432 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M		DUAL		R-PDMA-N184			200 MHz		Not Qualified	2147483648 bit						.02 Amp		.7 ns
MT16VDDT12864AY-40BF2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		5520 mA	134217728 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX64	128M		DUAL		R-PDMA-N184			200 MHz		Not Qualified	8589934592 bit						.08 Amp		.7 ns
MT18VDDT12872AY-40BJ1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4095 mA	134217728 words		COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M		DUAL		R-PDMA-N184			200 MHz		Not Qualified	9663676416 bit								.7 ns
MT8VDDF6464AY-40BJ1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M		DUAL	1	R-XDMA-N184	3.6 V	25.53 mm				4294967296 bit	2.3 V	AUTO/SELF REFRESH		30	260		133.35 mm
MT18VDDT12872AY-40BF1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4095 mA	134217728 words	YES	COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	GOLD	DUAL	1	R-XDMA-N184	2.7 V	31.9 mm	200 MHz	4 mm	Not Qualified	9663676416 bit	2.5 V	AUTO/SELF REFRESH; WD-MAX	e4				133.35 mm	.7 ns
MT18VDDF12872G-335D3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		7290 mA	134217728 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	Gold (Au)	DUAL		R-PDMA-N184			166 MHz		Not Qualified	9663676416 bit			e4			.09 Amp		.7 ns
MT18VDDF12872Y-335F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		128MX72	128M	Gold (Au)	DUAL	1	R-XDMA-N184	2.7 V	28.73 mm		3.99 mm	Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH; WD-MAX	e4	30	260		133.35 mm
MT18VDDT12872AY-335F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		128MX72	128M	Gold (Au)	DUAL	1	R-XDMA-N184	2.7 V	31.9 mm		4 mm	Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH; WD-MAX	e4	30	260		133.35 mm
MT16VDDT12864AY-335F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4640 mA	134217728 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX64	128M		DUAL		R-PDMA-N184			167 MHz		Not Qualified	8589934592 bit						.08 Amp		.7 ns
MT36VDDF12872G-335G3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		10440 mA	134217728 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M		DUAL		R-PDMA-N184			166 MHz		Not Qualified	9663676416 bit								.7 ns
MT9VDDT6472AY-335F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3645 mA	67108864 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64MX72	64M	GOLD	DUAL	1	R-XDMA-N184	2.7 V	3.18 mm	167 MHz	31.75 mm	Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4			.045 Amp	133.35 mm	.7 ns
MT8VDDT3264AY-40BG6	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3760 mA	33554432 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M		DUAL		R-PDMA-N184			200 MHz		Not Qualified	2147483648 bit						.032 Amp		.7 ns
MT8VDDT3264AG-40BG6	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3760 mA	33554432 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M		DUAL		R-PDMA-N184			200 MHz		Not Qualified	2147483648 bit						.032 Amp		.7 ns
MT8VDDT3264AY-335G6	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3280 mA	33554432 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	GOLD	DUAL	1	R-XDMA-N184	2.7 V		167 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	e4			.032 Amp		.7 ns
MT18VDVF12872DY-335F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5220 mA	134217728 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	GOLD	DUAL	1	R-XDMA-N184	2.7 V		166 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e4					.7 ns
MT18VDVF12872Y-40BD4	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.6		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	GOLD	DUAL	1	R-XDMA-N184	2.7 V	4 mm		18.29 mm	Not Qualified	9663676416 bit	2.5 V	AUTO/SELF REFRESH	e4				133.35 mm
MT9VDDF6472Y-335F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3645 mA	67108864 words	YES	COMMON	2.5	2.5	8	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX8	64M	GOLD	DUAL	1	R-XDMA-N184	2.7 V	28.73 mm	167 MHz	3.175 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH; WD-MAX	e4			.045 Amp	133.35 mm	.7 ns
MT9VDDT6472AY-40BF1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4050 mA	67108864 words	YES	COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64MX72	64M	GOLD	DUAL	1	R-XDMA-N184	2.7 V	31.75 mm	200 MHz	3.18 mm	Not Qualified	4831838208 bit	2.5 V	AUTO/SELF REFRESH	e4			.045 Amp	133.35 mm	.7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.