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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT8VDDT6464HDY-40BF2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1940 mA	67108864 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	4294967296 bit						.04 Amp		.7 ns
MT18VDDF12872HY-40BF1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		6210 mA	134217728 words		COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	9663676416 bit						.09 Amp		.7 ns
MT16HTF12864HZ-667G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1976 mA	134217728 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N200				333 MHz		Not Qualified	8589934592 bit						.112 Amp		.45 ns
MT8VDDT6464HDY-40BJ1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1940 mA	67108864 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	4294967296 bit						.04 Amp		.7 ns
MT9HTF6472RHZ-667G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1260 mA	67108864 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N200				333 MHz		Not Qualified	4831838208 bit						.063 Amp		.45 ns
MT4VDDT3264HIY-335J1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1620 mA	33554432 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	32MX64	32M	-40 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	2147483648 bit								.7 ns
MT4VDDT3264HY-335J1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1620 mA	33554432 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	2147483648 bit								.7 ns
MT8VDDT6464HY-335J1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3240 mA	67108864 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	4294967296 bit						.04 Amp		.7 ns
MT16HTS25664HY-667A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2336 mA	268435456 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			333 MHz		Not Qualified	17179869184 bit			e3			.112 Amp
MT16VDDF12864HY-40BJ1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		5520 mA	134217728 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			200 MHz		Not Qualified	8589934592 bit			e3			.08 Amp		.7 ns
MT18HTS25672RHZ-80EH1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3123 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	256MX72	256M	0 Cel	MATTE TIN	ZIG-ZAG	1	R-XZMA-N200	1	1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e3				67.6 mm	.4 ns
MT4HTF3264HZ-667G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1400 mA	33554432 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			333 MHz		Not Qualified	2147483648 bit			e3			.028 Amp		.45 ns
MT4HTF3264HZ-800G1	Micron Technology	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1480 mA	33554432 words	YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	DUAL	1	R-PDMA-N200	1	3.6 V	30.15 mm	400 MHz	2.45 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e3			.028 Amp	67.6 mm	.4 ns
MT4HTF6464HZ-800H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	67108864 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel	MATTE TIN	ZIG-ZAG	1	R-XZMA-N200	1	1.9 V	30.15 mm	400 MHz	2.45 mm	Not Qualified	4294967296 bit	1.7 V	SELF REFRESH; WD-MAX	e3			.028 Amp	67.6 mm
MT8HTF12864HZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2240 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	MATTE TIN	ZIG-ZAG	1	R-XZMA-N200	1	1.9 V	30.15 mm	333 MHz	3.8 mm	Not Qualified	8589934592 bit	1.7 V	SELF REFRESH; WD-MAX	e3			.056 Amp	67.6 mm
MT8HTF12864HZ-800H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2680 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	MATTE TIN	ZIG-ZAG	1	R-XZMA-N200	1	1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	8589934592 bit	1.7 V	SELF REFRESH; WD-MAX	e3			.056 Amp	67.6 mm
MT16HTF51264HZ-800C1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	34359738368 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e4				67.6 mm	.4 ns
MT16HTF25664HIZ-667H1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3440 mA	268435456 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M	-40 Cel	Gold (Au)	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm	333 MHz	3.8 mm	Not Qualified	17179869184 bit	1.7 V	SELF REFRESH; WD-MAX	e4			.112 Amp	67.6 mm
MT16VDDF12864HY-40BF2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5520 mA	134217728 words	YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200			31.9 mm	200 MHz	3.8 mm	Not Qualified	8589934592 bit		AUTO/SELF REFRESH; WD-MAX	e4			.08 Amp	67.6 mm	.7 ns
MT4VDDT3264HY-335F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1620 mA	33554432 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		2.7 V	31.9 mm	167 MHz	2.45 mm	Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH; WD-MAX	e4				67.6 mm	.7 ns
MT4VDDT3264HY-40BJ1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1920 mA	33554432 words	YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		2.7 V	31.9 mm	200 MHz	2.45 mm	Not Qualified	2147483648 bit	2.5 V	AUTO/SELF REFRESH; WD-MAX	e4				67.6 mm	.7 ns
MT16HTF25664HZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3440 mA	268435456 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N200				333 MHz		Not Qualified	17179869184 bit				30	260	.112 Amp
MT16HTF25664HZ-800H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3760 mA	268435456 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e4			.112 Amp	67.6 mm
MT8HTF12864HDZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1430 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.45 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		3.6 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e4			.056 Amp	67.6 mm	.4 ns
MT8HTF12864HDZ-800H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1790 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.45 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		3.6 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	8589934592 bit	1.7 V	SELF REFRESH; WD-MAX	e4			.056 Amp	67.6 mm	.4 ns
MT9HTF12872RHZ-80EH1	Micron Technology		COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1890 mA	134217728 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N200				400 MHz		Not Qualified	9663676416 bit				30	260	.063 Amp		.4 ns
MT8HTF6464HDY-667D3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1480 mA	67108864 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V	3.8 mm	333 MHz	30.5 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e4			.056 Amp	67.6 mm	.45 ns
MT8HTF6464HDY-53ED3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1380 mA	67108864 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				266 MHz		Not Qualified	4294967296 bit						.056 Amp		.5 ns
MT4HTF3264HY-53ED3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1360 mA	33554432 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N200				267 MHz		Not Qualified	2147483648 bit						.028 Amp		.5 ns
MT16VDDF12864HG-335D2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3280 mA	134217728 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N200		2.7 V		167 MHz		Not Qualified	8589934592 bit	2.3 V	AUTO/SELF REFRESH	e0			.08 Amp		.7 ns
MT16HTS51264HY-667A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2824 mA	536870912 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	3.8 mm	333 MHz	30 mm	Not Qualified	34359738368 bit	1.7 V	AUTO/SELF REFRESH	e4			.128 Amp	67.6 mm	.45 ns
MT16VDDF12864HY-335F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4640 mA	134217728 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		2.7 V		167 MHz		Not Qualified	8589934592 bit	2.3 V	AUTO/SELF REFRESH	e4			.08 Amp		.7 ns
MT8VDDT6464HDG-40BF2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1940 mA	67108864 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	4294967296 bit						.04 Amp		.7 ns
MT8VDDT6464HDG-335F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1640 mA	67108864 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	4294967296 bit						.04 Amp		.7 ns
MT8VDDT3264HY-335G3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3280 mA	33554432 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	2147483648 bit								.7 ns
MT4VDDT3264HG-335F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1620 mA	33554432 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	2147483648 bit								.7 ns
MT16VDDF6464HY-335G2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4080 mA	67108864 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	4294967296 bit						.064 Amp		.7 ns
MT16VDDF6464HG-335G2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4080 mA	67108864 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	4294967296 bit						.064 Amp		.7 ns
MT9VDDT6472HY-335F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3645 mA	67108864 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		2.7 V	3.8 mm	166 MHz	31.75 mm	Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4			.045 Amp	67.6 mm	.7 ns
MT18VDDF12872HY-335F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	Gold (Au)	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e4	30	260
MT8HTF6464HDY-53EB3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1680 mA	67108864 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	65 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				267 MHz		Not Qualified	4294967296 bit						.04 Amp		.5 ns
MT16HTF12864HY-667B3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3360 mA	134217728 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	65 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N200				333 MHz		Not Qualified	8589934592 bit						.08 Amp		.45 ns
MT8HTF6464HDY-667B3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1760 mA	67108864 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	65 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				333 MHz		Not Qualified	4294967296 bit						.04 Amp		.45 ns
MT8HTF12864HDY-667E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2160 mA	134217728 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N200				333 MHz		Not Qualified	8589934592 bit						.056 Amp		.45 ns
MT4HTF6464HY-667E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1400 mA	67108864 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				333 MHz		Not Qualified	4294967296 bit						.028 Amp		.45 ns
MT18HTS25672RHZ-80EM1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm		3.8 mm		19327352832 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX					67.6 mm
MT8HTF12864HDZ-800M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel		DUAL	1	R-XDMA-N200		1.9 V	30.15 mm		3.8 mm		8589934592 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX					67.6 mm
MT9HTF12872RHZ-80EM1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm		3.8 mm		9663676416 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX					67.6 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.