240 DRAM 110

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

MT36KDZS2G72PZ-1G4E1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2147483648 words

YES

1.35

72

MICROELECTRONIC ASSEMBLY

.8 mm

70 Cel

2GX72

2G

0 Cel

DUAL

1

R-XDMA-N240

1.45 V

18.9 mm

6.19 mm

154618822656 bit

1.283 V

SELF REFRESH; WD-MAX

NOT SPECIFIED

NOT SPECIFIED

133.35 mm

MT36KSF1G72PZ-1G4K1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1073741824 words

YES

1.5

72

MICROELECTRONIC ASSEMBLY

1 mm

70 Cel

1GX72

1G

0 Cel

DUAL

1

R-XDMA-N240

1.575 V

30.5 mm

4 mm

77309411328 bit

1.425 V

AUTO/SELF REFRESH; WD-MAX

133.35 mm

MT9KSF25672AZ-1G4K1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

268435456 words

YES

1.35

72

MICROELECTRONIC ASSEMBLY

1 mm

70 Cel

256MX72

256M

0 Cel

DUAL

1

R-XDMA-N240

1.45 V

30.5 mm

2.7 mm

19327352832 bit

1.283 V

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

133.35 mm

MT18KBZS1G72AKZ-1G6E1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1073741824 words

YES

1.35

72

MICROELECTRONIC ASSEMBLY

.6 mm

70 Cel

1GX72

1G

0 Cel

DUAL

1

R-XDMA-N240

1.45 V

17.91 mm

3.8 mm

77309411328 bit

1.283 V

AUTO/SELF REFRESH; WD-MAX

82 mm

MT36HTF1G72FZ-667C1D6

Micron Technology

DDR DRAM MODULE

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1073741824 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

1 mm

1GX72

1G

DUAL

1

R-XDMA-N240

1.9 V

30.5 mm

5.1 mm

77309411328 bit

1.7 V

AUTO/SELF REFRESH; WD-MAX

133.35 mm

MT36HTF51272FZ-667H1D6

Micron Technology

240

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

4480 mA

536870912 words

COMMON

1.5,1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

3-STATE

512MX72

512M

GOLD

DUAL

R-PDMA-N240

333 MHz

Not Qualified

38654705664 bit

e4

MT9HTF12872PZ-667H1

Micron Technology

COMMERCIAL

240

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1665 mA

134217728 words

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

GOLD

DUAL

R-PDMA-N240

333 MHz

Not Qualified

9663676416 bit

e4

.063 Amp

.45 ns

MT9JSF25672AZ-1G9K1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

268435456 words

YES

1.5

72

MICROELECTRONIC ASSEMBLY

70 Cel

256MX72

256M

0 Cel

DUAL

1

R-XDMA-N240

1.575 V

30.5 mm

2.7 mm

19327352832 bit

1.425 V

SELF REFRESH; WD-MAX

133.35 mm

MT42L128M64D2MC-18WT:A

Micron Technology

LPDDR2 DRAM

240

VFBGA

SQUARE

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

134217728 words

YES

1.8

64

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

128MX64

128M

BOTTOM

1

S-PBGA-B240

1.95 V

.8 mm

14 mm

8589934592 bit

1.7 V

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

14 mm

MT36HTF51272PZ-80EH1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

6150 mA

536870912 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

70 Cel

3-STATE

512MX72

512M

0 Cel

Gold (Au)

DUAL

1

R-XDMA-N240

1.9 V

4 mm

400 MHz

30.175 mm

Not Qualified

38654705664 bit

1.7 V

AUTO/SELF REFRESH

e4

.252 Amp

133.35 mm

.45 ns

MT36HVS51272PZ-80EH1

Micron Technology

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

6246 mA

536870912 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

85 Cel

3-STATE

512MX72

512M

0 Cel

GOLD

DUAL

1

R-XDMA-N240

1.9 V

4 mm

400 MHz

17.9 mm

Not Qualified

38654705664 bit

1.7 V

AUTO/SELF REFRESH

e4

.252 Amp

133.35 mm

MT4HTF3264AY-53ED3

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1360 mA

33554432 words

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

70 Cel

3-STATE

32MX64

32M

0 Cel

DUAL

R-PDMA-N240

267 MHz

Not Qualified

2147483648 bit

.5 ns

MT16HTF6464AY-40EB2

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1880 mA

67108864 words

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

70 Cel

3-STATE

64MX64

64M

0 Cel

DUAL

R-PDMA-N240

200 MHz

Not Qualified

4294967296 bit

.08 Amp

.6 ns

MT16HTF12864AY-53ED4

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1856 mA

134217728 words

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

70 Cel

3-STATE

128MX64

128M

0 Cel

DUAL

R-PDMA-N240

266 MHz

Not Qualified

8589934592 bit

.112 Amp

.5 ns

MT18HTF12872AY-667D4

Micron Technology

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

3240 mA

134217728 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

85 Cel

3-STATE

128MX72

128M

0 Cel

GOLD

DUAL

1

R-XDMA-N240

1.9 V

333 MHz

Not Qualified

9663676416 bit

1.7 V

AUTO/SELF REFRESH

e4

MT36HTF25672PY-667D1

Micron Technology

DDR DRAM MODULE

OTHER

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

268435456 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

85 Cel

256MX72

256M

0 Cel

GOLD

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

19327352832 bit

1.7 V

AUTO/SELF REFRESH

e4

45 ns

MT9HTF12872PZ-80EH1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1890 mA

134217728 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

Gold (Au)

DUAL

1

R-XDMA-N240

1.9 V

30.5 mm

400 MHz

30.175 mm

Not Qualified

9663676416 bit

1.7 V

AUTO/SELF REFRESH

e4

.063 Amp

133.35 mm

.4 ns

MT18HTF12872PY-667D2

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

70 Cel

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

30.15 mm

Not Qualified

9663676416 bit

1.7 V

AUTO/SELF REFRESH

30

260

133.35 mm

MT18HTF25672AZ-667H1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1728 mA

268435456 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

70 Cel

3-STATE

256MX72

256M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

30.5 mm

333 MHz

30 mm

Not Qualified

19327352832 bit

1.7 V

AUTO/SELF REFRESH

.126 Amp

133.35 mm

.45 ns

MT18HTF25672PZ-667H1

Micron Technology

DDR DRAM MODULE

OTHER

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

3330 mA

268435456 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

85 Cel

3-STATE

256MX72

256M

0 Cel

GOLD

DUAL

1

R-XDMA-N240

1.9 V

30.5 mm

333 MHz

30.175 mm

Not Qualified

19327352832 bit

1.7 V

AUTO/SELF REFRESH

e4

.126 Amp

133.35 mm

.45 ns

MT16JTF25664AY-1G4D1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

4640 mA

268435456 words

COMMON

1.5,3.3

64

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

70 Cel

3-STATE

256MX64

256M

0 Cel

DUAL

R-PDMA-N240

667 MHz

Not Qualified

17179869184 bit

.16 Amp

MT4HTF6464AY-667E1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1400 mA

67108864 words

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

70 Cel

3-STATE

64MX64

64M

0 Cel

DUAL

R-PDMA-N240

333 MHz

Not Qualified

4294967296 bit

.028 Amp

.45 ns

MT16HTF25664AY-667E1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

268435456 words

YES

1.8

64

MICROELECTRONIC ASSEMBLY

70 Cel

256MX64

256M

0 Cel

GOLD

DUAL

1

R-XDMA-N240

1.9 V

4 mm

30.175 mm

Not Qualified

17179869184 bit

1.7 V

AUTO/SELF REFRESH

e4

133.35 mm

MT18HTF6472Y-40EB2

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

4140 mA

67108864 words

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

R-PDMA-N240

200 MHz

Not Qualified

4831838208 bit

.09 Amp

.6 ns

MT16HTF25664AZ-800M1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

268435456 words

YES

1.8

64

MICROELECTRONIC ASSEMBLY

1 mm

70 Cel

256MX64

256M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

30.5 mm

4 mm

17179869184 bit

1.7 V

AUTO/SELF REFRESH; WD-MAX

133.35 mm

MT18HTF25672AZ-80EM1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

268435456 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

1 mm

70 Cel

256MX72

256M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

30.5 mm

4 mm

19327352832 bit

1.7 V

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

133.35 mm

MT36HTF51272PZ-80EM1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

536870912 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

1 mm

70 Cel

512MX72

512M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

30.5 mm

4 mm

38654705664 bit

1.7 V

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

133.35 mm

MT8HTF12864AZ-800M1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

1.8

64

MICROELECTRONIC ASSEMBLY

70 Cel

128MX64

128M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

30.5 mm

2.7 mm

8589934592 bit

1.7 V

SELF REFRESH; WD-MAX

133.35 mm

MT9HTF12872AZ-80EM1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

70 Cel

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

30.5 mm

2.7 mm

9663676416 bit

1.7 V

AUTO/SELF REFRESH; WD-MAX

133.35 mm

MT9HTF12872PZ-80EM1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

1 mm

70 Cel

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

30.5 mm

2.7 mm

9663676416 bit

1.7 V

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

30

260

133.35 mm

MT18HVF25672PDZ-667H1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

268435456 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

70 Cel

256MX72

256M

0 Cel

GOLD

DUAL

1

R-XDMA-N240

1.9 V

4 mm

17.9 mm

Not Qualified

19327352832 bit

1.7 V

AUTO/SELF REFRESH

e4

133.35 mm

MT18HTF25672PDZ-667H1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1728 mA

268435456 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

70 Cel

3-STATE

256MX72

256M

0 Cel

GOLD

DUAL

1

R-XDMA-N240

1.9 V

30.5 mm

333 MHz

4 mm

Not Qualified

19327352832 bit

1.7 V

SELF CONTAINED REFRESH; WD-MAX

e4

.126 Amp

133.35 mm

.45 ns

MT4JTF12864AZ-1G4D1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1780 mA

134217728 words

COMMON

1.5

1.5,3.3

64

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

70 Cel

3-STATE

128MX64

128M

0 Cel

Gold (Au)

DUAL

1

R-XDMA-N240

1.575 V

30.5 mm

667 MHz

2.7 mm

Not Qualified

8589934592 bit

1.425 V

WD-MAX

e4

.048 Amp

133.35 mm

MT16HTF12864AY-667D4

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1976 mA

134217728 words

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

70 Cel

3-STATE

128MX64

128M

0 Cel

DUAL

R-PDMA-N240

333 MHz

Not Qualified

8589934592 bit

.112 Amp

.45 ns

MT36HTF51272PZ-667H1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

5160 mA

536870912 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

70 Cel

3-STATE

512MX72

512M

0 Cel

Gold (Au)

DUAL

1

R-XDMA-N240

1.9 V

30.5 mm

333 MHz

30.175 mm

Not Qualified

38654705664 bit

1.7 V

AUTO/SELF REFRESH

e4

.252 Amp

133.35 mm

.4 ns

MT18HVF25672PZ-667H1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

3330 mA

268435456 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

70 Cel

3-STATE

256MX72

256M

0 Cel

Gold (Au)

DUAL

1

R-XDMA-N240

1.9 V

18.05 mm

333 MHz

17.9 mm

Not Qualified

19327352832 bit

1.7 V

AUTO/SELF REFRESH

e4

.126 Amp

133.35 mm

.45 ns

MT18KSF1G72PDZ-1G6N1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1073741824 words

YES

1.35

72

MICROELECTRONIC ASSEMBLY

1 mm

70 Cel

1GX72

1G

0 Cel

DUAL

1

R-XDMA-N240

1.45 V

30.5 mm

4 mm

77309411328 bit

1.283 V

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

133.35 mm

MT72KSZS2G72PZ-1G1D1

Micron Technology

DDR3L DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

7130 mA

2147483648 words

YES

COMMON

1.35

1.35

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

70 Cel

3-STATE

2GX72

2G

0 Cel

Gold (Au)

DUAL

1

R-XDMA-N240

1.45 V

4 mm

533 MHz

30.175 mm

Not Qualified

154618822656 bit

1.283 V

AUTO/SELF REFRESH

e4

.864 Amp

133.35 mm

.3 ns

MT72JSZS2G72PZ-1G1D1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

6732 mA

2147483648 words

YES

COMMON

1.5

1.5

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

70 Cel

3-STATE

2GX72

2G

0 Cel

DUAL

1

R-XDMA-N240

1.575 V

30.5 mm

533 MHz

30 mm

Not Qualified

154618822656 bit

1.425 V

AUTO/SELF REFRESH

133.35 mm

MT8HTF12864AZ-800H1

Micron Technology

DDR2 DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1680 mA

134217728 words

YES

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

70 Cel

3-STATE

128MX64

128M

0 Cel

Gold (Au)

DUAL

1

R-XDMA-N240

400 MHz

Not Qualified

8589934592 bit

AUTO/SELF REFRESH

e4

.4 ns

MT9JSF25672AZ-1G1D1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2880 mA

268435456 words

YES

COMMON

1.5

1.5

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

70 Cel

3-STATE

256MX72

256M

0 Cel

DUAL

1

R-XDMA-N240

1.575 V

533 MHz

Not Qualified

19327352832 bit

1.425 V

AUTO/SELF REFRESH

.108 Amp

.3 ns

MT36KDZS1G72PZ-1G4D1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

7236 mA

1073741824 words

YES

COMMON

1.35

1.35

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

70 Cel

3-STATE

1GX72

1G

0 Cel

Gold (Au)

DUAL

1

R-XDMA-N240

1.45 V

667 MHz

Not Qualified

77309411328 bit

1.283 V

AUTO/SELF REFRESH

e4

.432 Amp

MT4HTF6464AZ-667H1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

920 mA

67108864 words

YES

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

70 Cel

3-STATE

64MX64

64M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N240

1

1.9 V

30.5 mm

333 MHz

30.175 mm

Not Qualified

4294967296 bit

1.7 V

AUTO/SELF REFRESH

e3

.028 Amp

133.35 mm

.45 ns

MT18KDF2G72AZ-1G6A1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2147483648 words

YES

1.35

72

MICROELECTRONIC ASSEMBLY

1 mm

70 Cel

2GX72

2G

0 Cel

DUAL

1

R-XDMA-N240

1.45 V

18.9 mm

4 mm

154618822656 bit

1.235 V

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

133.35 mm

MT72JSZS4G72LZ-1G9N1A7

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

4294967296 words

YES

1.5

72

MICROELECTRONIC ASSEMBLY

1 mm

70 Cel

4GX72

4G

0 Cel

DUAL

1

R-XDMA-N240

1.575 V

30.5 mm

7.55 mm

309237645312 bit

1.425 V

SELF REFRESH; WD-MAX

133.35 mm

MT9KSF51272AZ-1G6P1

Micron Technology

DDR DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

536870912 words

YES

1.35

72

MICROELECTRONIC ASSEMBLY

1 mm

70 Cel

512MX72

512M

0 Cel

DUAL

1

R-XDMA-N240

1.45 V

30.5 mm

2.7 mm

38654705664 bit

1.283 V

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

133.35 mm

MT18KSF1G72PZ-1G6P1

Micron Technology

DDR3L DRAM MODULE

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1073741824 words

YES

1.35

72

MICROELECTRONIC ASSEMBLY

1 mm

70 Cel

1GX72

1G

0 Cel

DUAL

1

R-XDMA-N240

1.45 V

30.5 mm

4 mm

77309411328 bit

1.283 V

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

133.35 mm

MT8KTF51264AZ-1G9P1

Micron Technology

DDR3 DRAM

COMMERCIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

536870912 words

YES

1.35

64

MICROELECTRONIC ASSEMBLY

1 mm

70 Cel

512MX64

512M

0 Cel

DUAL

1

R-XDMA-N240

1.45 V

30.5 mm

2.7 mm

34359738368 bit

1.283 V

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

133.35 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.