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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT48LC4M32LFF5-10:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	120 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX32	8M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		3.6 V	1 mm	100 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.00045 Amp	1,2,4,8	13 mm	7 ns
MT48LC4M32LFF5-10IT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	120 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		3.6 V	1 mm	100 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.00045 Amp	1,2,4,8	13 mm	7 ns
MT48LC4M32LFF5-8IT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-40 Cel	Tin/Lead/Silver (Sn/Pb/Ag)	BOTTOM	1	R-PBGA-B90		3.6 V	1 mm	125 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0	30	235	.00045 Amp	1,2,4,8	13 mm	7 ns
MT48V4M32LFB5-8:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		2.7 V	1 mm	125 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1			.00045 Amp	1,2,4,8	13 mm	7 ns
MT48V4M32LFB5-8IT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	2.7 V	1 mm	125 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1			.00045 Amp	1,2,4,8	13 mm	7 ns
MT48V4M32LFF5-10:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	120 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX32	8M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		2.7 V	1 mm	100 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.00045 Amp	1,2,4,8	13 mm	7 ns
MT48V4M32LFF5-10IT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	120 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		2.7 V	1 mm	100 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.00045 Amp	1,2,4,8	13 mm	7 ns
MT48V4M32LFF5-8IT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		2.7 V	1 mm	125 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.00045 Amp	1,2,4,8	13 mm	7 ns
MT48H4M32LFB56:K	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	100 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B90		1.95 V	1 mm	166 MHz	13 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1			.0002 Amp	1,2,4,8	8 mm	5.4 ns
MT48LC4M32LFF5-8:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX32	8M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		3.6 V	1 mm	125 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.00045 Amp	1,2,4,8	13 mm	7 ns
MT48H16M32LFCM-6LIT:B	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	105 mA	16777216 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	166 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	1,2,4,8	13 mm	5 ns
MT46H16M32LFCM-75IT	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	120 mA	16777216 words	2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	133 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8	13 mm	6 ns
MT48LC2M32B2B5-7:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	225 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		3.6 V	1 mm	143 MHz	8 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e1			.002 Amp	1,2,4,8	13 mm	5.5 ns
MT48LC2M32B2B5-7IT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	225 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		3.6 V	1 mm	143 MHz	8 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e1			.002 Amp	1,2,4,8	13 mm	5.5 ns
MT48LC4M32B2B5-6AAIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		4194304 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-40 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1 mm		8 mm		134217728 bit	3 V	AUTO/SELF REFRESH						13 mm	5.4 ns
MT48LC2M32B2B5-7ITGTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2097152 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX32	2M	-40 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1 mm		8 mm		67108864 bit	3 V	AUTO/SELF REFRESH						13 mm	5.5 ns
MT48H16M32LFCM-75:ATR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		10 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	6 ns
MT48LC8M32B2B5-7TR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		3.6 V	1 mm		8 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e1					13 mm	6 ns
MT46H64M32LFCX-6IT:BTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		9 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5 ns
MT46H64M32LFCM-6IT:ATR	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		10 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5 ns
MT48H16M32LFB5-75IT:CTR	Micron Technology	DDR DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5.4 ns
MT48H16M32LFCM-75:BTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		10 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5.4 ns
AS4C16M32MS-7BCN	Alliance Memory	SYNCHRONOUS DRAM	OTHER	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-25 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH						13 mm	5.4 ns
IS42S32800J-7BL-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		YES		3.3		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		8MX32	8M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.2 mm		8 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e1	10	260			13 mm	5.4 ns
MT48LC4M32B2B5-6A:LTR	Micron Technology	SYNCHRONOUS DRAM		90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	180 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32		.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1 mm	167 MHz	8 mm		134217728 bit	3 V	AUTO/SELF REFRESH				.0025 Amp	1,2,4,8	13 mm	5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.