BGA DRAM 28

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT46H16M16LFBF-6AT:H	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	85 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY	BGA60,9X10,32	DRAMs	.8 mm	105 Cel	3-STATE	16MX16	16M	-40 Cel		BOTTOM	1	R-PBGA-B60		1.95 V		166 MHz		Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH				.00001 Amp	2,4,8,16		5 ns
MT46H8M16LFBF-6AT:K	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	BGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	90 mA	8388608 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY	BGA60,9X10,32	DRAMs	.8 mm	105 Cel	3-STATE	8MX16	8M	-40 Cel		BOTTOM	1	R-PBGA-B60		1.95 V		166 MHz		Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH				.00001 Amp	2,4,8,16		5 ns
UPD48288209AFF-E24-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			COMMON	1.8	1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	32MX9	32M		TIN BISMUTH	BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6				2,4,8	18.5 mm
UPD48288236AFF-E18-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			8388608 words	2,4,8		COMMON		1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	8MX36	8M		TIN BISMUTH	BOTTOM		R-PBGA-B144				533 MHz		Not Qualified	301989888 bit			e6
UPD48288236AFF-E33-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			8388608 words	2,4,8		COMMON		1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	8MX36	8M			BOTTOM		R-PBGA-B144				300 MHz		Not Qualified	301989888 bit
MT49H16M18BM-33	Micron Technology	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	16MX18	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1		260			18.5 mm	.3 ns
MT49H16M18CFM-5IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	597 mA	16777216 words			SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	200 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0			.026 Amp	2,4,8	18.5 mm	.5 ns
MT40A4G4DVN-062H:E	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4294967296 words		YES		1.2		4	GRID ARRAY				95 Cel		4GX4	4G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V					17179869184 bit	1.14 V	AUTO/SELF REFRESH
MT40A8G4CLU-062H:E	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8589934592 words		YES		1.2		4	GRID ARRAY				95 Cel		8GX4	8G	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V					34359738368 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260
MT40A8G4CLU-075H:E	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8589934592 words		YES		1.2		4	GRID ARRAY				95 Cel		8GX4	8G	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V					34359738368 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260
MT47H64M16HR-25EXIT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	BGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	ASYNCHRONOUS	260 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84				400 MHz		Not Qualified	1073741824 bit		SELF REFRESH		30	260	.007 Amp	4,8		.4 ns
MT46V16M16CY-5BXIT:M	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		2.6		16	GRID ARRAY				85 Cel		16MX16	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V					268435456 bit	2.5 V	AUTO/SELF REFRESH	e1
EDF8132A3MA-JD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	178	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		32	GRID ARRAY			.8 mm	85 Cel		256MX32	256M	-30 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B178		1.3 V	.85 mm		10.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1					11.5 mm
MT41K256M16HA-125XIT:E	Micron Technology	DDR3L DRAM		96	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY						256MX16	256M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.45 V					4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260
MT47H64M16HR-25EXIT:HTR	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	ASYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY				85 Cel		64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V					1073741824 bit	1.7 V	SELF REFRESH	e1
MT40A4G4DVN-075H:E	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4294967296 words		YES		1.2		4	GRID ARRAY				95 Cel		4GX4	4G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V					17179869184 bit	1.14 V	AUTO/SELF REFRESH
MT53D1024M32D4DT-053AAT:D	Micron Technology	DDR4 DRAM			BGA		UNSPECIFIED	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words						32	GRID ARRAY						1GX32	1G			BOTTOM	1	X-PBGA-B							34359738368 bit				NOT SPECIFIED	NOT SPECIFIED
MT40A4G4DVN-062H:ETR	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4294967296 words		YES		1.2		4	GRID ARRAY				95 Cel		4GX4	4G	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V					17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260
MT40A8G4CLU-062H:ETR	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8589934592 words		YES		1.2		4	GRID ARRAY				95 Cel		8GX4	8G	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V					34359738368 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260
MT40A8G4CLU-075H:ETR	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8589934592 words		YES		1.2		4	GRID ARRAY				95 Cel		8GX4	8G	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V					34359738368 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260
S27KL0642GABHM020	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words				3		1	GRID ARRAY				125 Cel		64MX1	64M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V		200 MHz			67108864 bit	2.7 V								35 ns
S27KS0642GABHM023	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words				1.8		1	GRID ARRAY				125 Cel		64MX1	64M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V		200 MHz			67108864 bit	1.7 V								35 ns
S70KL1282GABHM020	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words			COMMON	3		1	GRID ARRAY				125 Cel		128MX1	128M	-40 Cel		BOTTOM	1	R-PBGA-B240	3	3.6 V		200 MHz			134217728 bit	2.7 V								35 ns
S27KS0642GABHM020	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words				1.8		1	GRID ARRAY				125 Cel		64MX1	64M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V		200 MHz			67108864 bit	1.7 V								35 ns
S70KS1282GABHM023	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words				1.8		1	GRID ARRAY				125 Cel		128MX1	128M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V		200 MHz			134217728 bit	1.7 V								35 ns
S27KL0642GABHM023	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words						1	GRID ARRAY				125 Cel		64MX1	64M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V		200 MHz			67108864 bit	2.7 V								35 ns
S70KL1282GABHM023	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words				3		1	GRID ARRAY				125 Cel		128MX1	128M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V		200 MHz			134217728 bit	2.7 V								35 ns
S70KS1282GABHM020	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words				1.8		1	GRID ARRAY				125 Cel		128MX1	128M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V		200 MHz			134217728 bit	1.7 V								35 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.