FBGA DRAM 10

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
MT48H8M32LFB5-75AT:H	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	85 mA	8388608 words	1,2,4,8,FP	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	105 Cel		8MX32	8M	-40 Cel		BOTTOM	R-PBGA-B90		133 MHz	Not Qualified	268435456 bit				.00001 Amp	1,2,4,8	5.4 ns
IS42S32800G-6BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	350 mA	8388608 words	1,2,4,8,FP	COMMON	3.3	3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-40 Cel		BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	268435456 bit				.003 Amp	1,2,4,8	5.4 ns
IS42S32400F-6BL-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	180 mA	4194304 words	1,2,4,8,FP	COMMON	3.3	3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		BOTTOM	R-PBGA-B90		166 MHz	Not Qualified	134217728 bit				.002 Amp	1,2,4,8	5.4 ns
IS42S16800F-7BL-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	54	FBGA	4096	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	100 mA	8388608 words	1,2,4,8,FP	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	0 Cel		BOTTOM	S-PBGA-B54		143 MHz	Not Qualified	134217728 bit				.002 Amp	1,2,4,8	5.4 ns
IS42S83200G-7BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	130 mA	33554432 words	1,2,4,8,FP	COMMON	3.3	3.3	8	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel		BOTTOM	S-PBGA-B54		143 MHz	Not Qualified	268435456 bit				.004 Amp	1,2,4,8	5.4 ns
MT42L64M32D1LF-18IT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	220 mA		4,8,16	COMMON		1.2,1.8		GRID ARRAY, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE			-40 Cel		BOTTOM	S-PBGA-B168		533 MHz	Not Qualified	2147483648 bit				.000025 Amp	4,8,16	5.5 ns
MT47H512M8WTR-3:C	Micron Technology	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		536870912 words		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel	MATTE TIN	BOTTOM	R-PBGA-B63	1		Not Qualified	4294967296 bit	e3
MT47H256M8THN-3:H	Micron Technology	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	192 mA	268435456 words		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM	R-PBGA-B63		333 MHz	Not Qualified	2147483648 bit		30	260	.014 Amp
MT47H512M4THN-3:H	Micron Technology	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	192 mA	536870912 words		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM	R-PBGA-B63		333 MHz	Not Qualified	2147483648 bit		30	260	.014 Amp
MT46H256M32L4SA-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	168	FBGA	8192	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	90 mA	268435456 words	2,4,8,16	COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX32	256M	-25 Cel		BOTTOM	S-PBGA-B168		208 MHz	Not Qualified	8589934592 bit		30	260	.00001 Amp	2,4,8,16	5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.