LFBGA DRAM 14

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
IS43TR16512A-15HBLI	Integrated Silicon Solution	DDR3 DRAM		96	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm			512MX16	512M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.575 V	1.4 mm		10 mm		8589934592 bit	1.425 V	AUTO/SELF REFRESH	e1				14 mm
MT48H16M32L2B5-10IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1				13 mm
MT48H16M32L2B5-10	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1				13 mm
MT48H16M32L2B5-8IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1				13 mm	8.5 ns
MT48H16M32L2B5-8	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1				13 mm
MT48H16M32L2F5-10IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M		-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90	1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0				13 mm
MT48H16M32L2F5-10	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M		0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90	1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0				13 mm
MT48H16M32L2F5-8IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M		-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90	1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0				13 mm	8.5 ns
MT48H16M32L2F5-8	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M		0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90	1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0				13 mm
MT41J512M8THU-15E:A	Micron Technology	DDR3 DRAM	OTHER	82	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82	1.575 V	1.35 mm		12.5 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1				15 mm
MT47H32M8BP-37V:B	Micron Technology	DDR2 DRAM	OTHER	60	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	280 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX8	32M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	1.9 V	1.3 mm	266 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1	260	.005 Amp	4,8	12 mm	.5 ns
MT47H16M16BG-37V:B	Micron Technology	DDR2 DRAM	OTHER	84	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	280 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	1.9 V	1.3 mm	266 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1		.006 Amp	4,8	14 mm	.5 ns
MT41J512M8THU-187E:A	Micron Technology	DDR3 DRAM	OTHER	82	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	445 mA	536870912 words		YES	COMMON	1.5	1.5	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82	1.575 V	1.35 mm	533 MHz	12.5 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1		.035 Amp		15 mm
IS43TR16512S2DL-125KBLI	Integrated Silicon Solution	DDR3L DRAM	INDUSTRIAL	96	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	246 mA	536870912 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	512MX16	512M	1.283 V	-40 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1.4 mm	800 MHz	9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH		260	.044 Amp	4,8	13 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.