8192 DRAM 707

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT16LSDF6464HG-13ED2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		4560 mA	67108864 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N144			143 MHz		Not Qualified	4294967296 bit						.032 Amp			5.4 ns
MT46V16M16P5B:FTR	Micron Technology	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING			16777216 words	2,4,8		COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	16MX16	16M	0 Cel		DUAL		R-PDSO-G66			200 MHz		Not Qualified	268435456 bit							2,4,8
MT8VDDT6464AY-40BF4	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		3600 mA	67108864 words			COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N184			200 MHz		Not Qualified	4294967296 bit						.04 Amp			.7 ns
MT8VDDT6464HDY-40BF2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1940 mA	67108864 words			COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200			200 MHz		Not Qualified	4294967296 bit						.04 Amp			.7 ns
MT18VDDF12872G-40BD3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		8100 mA	134217728 words			COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N184			200 MHz		Not Qualified	9663676416 bit						.09 Amp			.7 ns
MT18VDDF12872Y-40BF1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		8100 mA	134217728 words			COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N184			200 MHz		Not Qualified	9663676416 bit						.09 Amp			.7 ns
MT36VDDF25672Y-40BF3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		12420 mA	268435456 words			COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL		R-PDMA-N184			200 MHz		Not Qualified	19327352832 bit						.18 Amp			.7 ns
MT18VDDF12872HY-40BF1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		6210 mA	134217728 words			COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N200			200 MHz		Not Qualified	9663676416 bit						.09 Amp			.7 ns
MT8VDDT12832UY-6F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1640 mA	67108864 words			COMMON	2.5	2.5	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	64MX32	64M	0 Cel		DUAL		R-PDMA-N100			167 MHz		Not Qualified	2147483648 bit						.04 Amp			.7 ns
MT16JSF51264HZ-1G1D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		2656 mA	536870912 words			COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL		R-PDMA-N204			533 MHz		Not Qualified	34359738368 bit						.192 Amp
MT4VDDT3264AY-40BF1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1920 mA	33554432 words			COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N184			200 MHz		Not Qualified	2147483648 bit						.02 Amp			.7 ns
MT16HTF12864HZ-667G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1976 mA	134217728 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N200			333 MHz		Not Qualified	8589934592 bit						.112 Amp			.45 ns
MT16HTF25664AZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		2296 mA	268435456 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N240			333 MHz		Not Qualified	17179869184 bit						.112 Amp
MT16HTF25664AZ-800H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		2736 mA	268435456 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N240			400 MHz		Not Qualified	17179869184 bit						.112 Amp
MT16VDDT12864AY-40BF2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		5520 mA	134217728 words			COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N184			200 MHz		Not Qualified	8589934592 bit						.08 Amp			.7 ns
MT8VDDT6464HDY-40BJ1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1940 mA	67108864 words			COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200			200 MHz		Not Qualified	4294967296 bit						.04 Amp			.7 ns
MT8JSF25664HDZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		2040 mA	268435456 words			COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N204			667 MHz		Not Qualified	17179869184 bit						.096 Amp
MT9HTF6472RHZ-667G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1260 mA	67108864 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N200			333 MHz		Not Qualified	4831838208 bit						.063 Amp			.45 ns
MT4VDDT3264HIY-335J1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1620 mA	33554432 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	32MX64	32M	-40 Cel		DUAL		R-PDMA-N200			167 MHz		Not Qualified	2147483648 bit									.7 ns
MT4VDDT3264HY-335J1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1620 mA	33554432 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N200			167 MHz		Not Qualified	2147483648 bit									.7 ns
MT16KSF51264HZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD			536870912 words			COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL		R-PDMA-N204			667 MHz		Not Qualified	34359738368 bit
MT8VDDT6464HY-335J1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		3240 mA	67108864 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200			167 MHz		Not Qualified	4294967296 bit						.04 Amp			.7 ns
MT18VDDT12872AY-40BJ1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		4095 mA	134217728 words			COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N184			200 MHz		Not Qualified	9663676416 bit									.7 ns
MT46V64M8CY-5BAIT:J	Micron Technology	DDR1 DRAM		60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	2.6		8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32		1 mm	85 Cel		64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	200 MHz	8 mm		536870912 bit	2.5 V	AUTO/SELF REFRESH; TERM PITCH-MAX	e1	30	260		2,4,8	12.5 mm
IS42S83200G-7BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS		BALL		130 mA	33554432 words	1,2,4,8,FP		COMMON	3.3	3.3	8	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel		BOTTOM		S-PBGA-B54			143 MHz		Not Qualified	268435456 bit						.004 Amp	1,2,4,8		5.4 ns
MT8KTF25664AZ-1G6K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1248 mA	268435456 words			COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N240			800 MHz		Not Qualified	17179869184 bit						.096 Amp			.225 ns
MT8KTF51264AZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1760 mA	536870912 words			COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL		R-PDMA-N240			800 MHz		Not Qualified	34359738368 bit						.144 Amp			.225 ns
MT8KTF12864HZ-1G4G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1960 mA	134217728 words			COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N204			667 MHz		Not Qualified	8589934592 bit						.096 Amp
MT8KTF51264HZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1760 mA	536870912 words			COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL		R-PDMA-N204			800 MHz		Not Qualified	34359738368 bit						.144 Amp
MT8KTF51264HZ-1G9E5	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		2008 mA	536870912 words			COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL		R-PDMA-N204			933 MHz		Not Qualified	34359738368 bit						.144 Amp
MT42L64M32D1LF-18IT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS		BALL		220 mA		4,8,16		COMMON		1.2,1.8		GRID ARRAY, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE			-40 Cel		BOTTOM		S-PBGA-B168			533 MHz		Not Qualified	2147483648 bit						.000025 Amp	4,8,16		5.5 ns
MT48H16M16LFBF-75IT:H	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	85 mA	16777216 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	1.95 V	1 mm	133 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	1,2,4,8	9 mm	5.4 ns
MT46H128M16LFCK-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	130 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	1.95 V	1 mm	208 MHz	10 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	11.5 mm	5 ns
MT46H128M16LFCK-6IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	115 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	1.95 V	1 mm	166 MHz	10 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	11.5 mm	5 ns
MT46H128M32L2KQ-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	128MX32	128M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm	208 MHz	12 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	12 mm	5 ns
MT46H128M32L2MC-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	240	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA240,27X27,20	DRAMs	.5 mm	85 Cel	3-STATE	128MX32	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B240	1.95 V	.8 mm	208 MHz	14 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	14 mm	5 ns
MT46H256M32L4JV-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	268435456 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX32	256M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.95 V	1 mm	208 MHz	12 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	12 mm	5 ns
MT46H256M32L4JV-6IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	140 mA	268435456 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX32	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	1 mm	166 MHz	12 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	12 mm	5 ns
MT46H64M32LFCM-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX32	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	1.95 V	1 mm	208 MHz	10 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1			.01 Amp	2,4,8,16	13 mm	5 ns
MT46H64M32LFCM-6IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	140 mA	67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX32	64M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90	1.95 V	1 mm	166 MHz	10 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.01 Amp	2,4,8,16	13 mm	5 ns
MT46H64M32LFMA-6IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	140 mA	67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	64MX32	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.7 mm	166 MHz	12 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1			.01 Amp	2,4,8,16	12 mm	5 ns
MT47R128M8CF-3:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	4,8	YES	COMMON	1.55	1.55	8	GRID ARRAY	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.5 V	SELF CONTAINED REFRESH	e1				4,8	10 mm	450 ns
MT47R256M4CF-3:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	4,8	YES	COMMON	1.55	1.55	4	GRID ARRAY	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.5 V	SELF CONTAINED REFRESH	e1				4,8	10 mm	450 ns
MT47R64M16HR-3:H	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words	4,8	YES	COMMON	1.55	1.55	16	GRID ARRAY	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.5 V	SELF CONTAINED REFRESH	e1			.007 Amp	4,8	12.5 mm	450 ns
MT46V32M16CV-5BIT:J	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	230 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.6	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	Tin/Lead/Silver (Sn/Pb/Ag)	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e0	30	235	.005 Amp	2,4,8	12.5 mm	.7 ns
MT41K128M8JP-15E:G	Micron Technology	DDR3L DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	490 mA	134217728 words	8	YES	COMMON	1.35	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm		3-STATE	128MX8	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm	667 MHz	8 mm	Not Qualified	1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1				8	11.5 mm	.255 ns
MT41K256M4JP-15E:G	Micron Technology	DDR3L DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	315 mA	268435456 words	8	YES	COMMON	1.35	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm		3-STATE	256MX4	256M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm	667 MHz	8 mm	Not Qualified	1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1				8	11.5 mm	.255 ns
MT41K64M16JT-15E:G	Micron Technology	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	275 mA	67108864 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm	667 MHz	8 mm	Not Qualified	1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1			.012 Amp	8	14 mm	.255 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.