COMMERCIAL DRAM 566

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT48H32M16LFCJ-75:ATR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		32MX16	32M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54		1.95 V	1 mm		10 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH	e1				11.5 mm	6 ns
MT48LC8M16A2P-7ELTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words	YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		8MX16	8M	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3				22.22 mm	5.4 ns
MT48LC8M32B2B5-7TR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		8MX32	8M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		3.6 V	1 mm		8 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e1				13 mm	6 ns
MT46H16M16LFBF-6:ATR	Micron Technology	DDR1 DRAM	COMMERCIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		16MX16	16M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm		8 mm		268435456 bit	1.7 V	AUTO/SELF REFRESH	e1				9 mm	5 ns
MT48LC2M32B2P-5:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words	YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		2MX32	2M	MATTE TIN	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm		67108864 bit	3 V	AUTO/SELF REFRESH	e3				22.22 mm	4.5 ns
MT48LC2M32B2P-6:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words	YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		2MX32	2M	Matte Tin (Sn)	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm		67108864 bit	3 V	AUTO/SELF REFRESH	e3	30	260		22.22 mm	5.5 ns
MT48LC4M16A2B4-7E:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	YES		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		4MX16	4M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		3.6 V	1 mm		8 mm		67108864 bit	3 V	AUTO/SELF REFRESH	e1				8 mm	5.4 ns
MT48LC16M16A2P-6A:DTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words	YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		16MX16	16M	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e3				22.22 mm	5.4 ns
MT48LC16M16A2P-7E:DTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words	YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		16MX16	16M	Matte Tin (Sn)	DUAL	1	R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260		22.22 mm	5.4 ns
MT48LC16M16A2P-7E:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words	YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		16MX16	16M	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260		22.22 mm	5.4 ns
MT48LC16M16A2TG-75:DTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words	YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		16MX16	16M	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e0				22.22 mm	5.4 ns
MT48LC16M8A2P-7E:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words	YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		16MX8	16M	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3				22.22 mm	5.4 ns
MT48LC16M8A2P-7E:LTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words	YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		16MX8	16M	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3				22.22 mm	5.4 ns
MT48LC8M16A2P-6A:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words	YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		8MX16	8M	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3				22.22 mm	5.4 ns
MT48H16M32LFCM-75:BTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		10 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH	e1				13 mm	5.4 ns
MT48H32M16LFBF-75:BTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		32MX16	32M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54		1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH	e1				9 mm	5.4 ns
MT48LC2M32B2P-5:JTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words	YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		2MX32	2M	MATTE TIN	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm		67108864 bit	3 V	AUTO/SELF REFRESH	e3				22.22 mm	4.5 ns
MT48LC2M32B2P-6A:JTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words	YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		2MX32	2M	Matte Tin (Sn)	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm		67108864 bit	3 V	AUTO/SELF REFRESH	e3	30	260		22.22 mm	5.4 ns
MT48LC8M16A2P-75:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words	YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		8MX16	8M	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260		22.22 mm	5.4 ns
MT48LC4M32B2P-6A:LTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words	YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		4MX32	4M	Matte Tin (Sn)	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260		22.22 mm	5.4 ns
MT48LC4M32B2P-7:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words	YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		4MX32	4M	MATTE TIN	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3				22.22 mm	5.5 ns
MT18KSF1G72AZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		1GX72	1G		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm		77309411328 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX					133.35 mm
MT8KTF25664HZ-1G6K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1248 mA	268435456 words	YES	COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm	800 MHz	3.8 mm	Not Qualified	17179869184 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX				.096 Amp	67.6 mm
MT18KSF1G72HZ-1G6E2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		1GX72	1G	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e4				67.6 mm
MT18KSF51272HZ-1G6K2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		512MX72	512M		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX					67.6 mm
MT36KSF2G72PZ-1G6N1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		2GX72	2G		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm		154618822656 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX					133.35 mm
MT36KSF2G72PZ-1G6P1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		2GX72	2G		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm		154618822656 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX					133.35 mm
MT16KTF1G64HZ-1G9E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		1GX64	1G		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		68719476736 bit	1.283 V	SELF REFRESH; WD-MAX					67.6 mm
MT16KTF1G64HZ-1G9P1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		1GX64	1G		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		68719476736 bit	1.283 V	SELF REFRESH; WD-MAX		30	260		67.6 mm
MT16KTF2G64HZ-1G6A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		2GX64	2G		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		137438953472 bit	1.283 V	SELF REFRESH; WD-MAX		30	260		67.6 mm
MT18KSF2G72HZ-1G6A2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		2GX72	2G		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		154618822656 bit	1.283 V	SELF REFRESH; WD-MAX					67.6 mm
MT46V16M16CY-5B:MTR	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		2.6		16	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		16MX16	16M	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		8 mm		268435456 bit	2.5 V	AUTO/SELF REFRESH	e1	30	260		12.5 mm	.7 ns
IS42S16160J-7BL-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	54	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	YES		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		16MX16	16M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		3.6 V	1.2 mm		8 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e1		260		8 mm	5.4 ns
MT4VDDT1664HY-335K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1080 mA	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N200		2.7 V	31.9 mm	167 MHz	2.45 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED		67.6 mm	.7 ns
MT4LSDT1664AY-13ED1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY			1.27 mm	65 Cel		16MX64	16M		DUAL	1	R-XDMA-N168		3.6 V	25.53 mm		3.18 mm		1073741824 bit	3 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED		133.125 mm	5.4 ns
MT48LC32M16A2TG-75:CTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words	YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		32MX16	32M	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		536870912 bit	3 V	AUTO/SELF REFRESH	e0	30	260		22.22 mm	5.4 ns
IS42S32800J-7BL-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES		3.3		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		8MX32	8M	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.2 mm		8 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e1	10	260		13 mm	5.4 ns
MT48LC16M16A2F4-6A:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		16MX16	16M	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B54		3.6 V	1 mm		8 mm		268435456 bit	3 V	AUTO REFRESH	e1	30	260		8 mm	5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.