Integrated Silicon Solution DRAM 79

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
IS43TR16256A-125KBLI-TR	Integrated Silicon Solution	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4, 8		COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	1.425 V	-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH				.057 Amp	4, 8	13 mm
IS43LD32128B-25BLI	Integrated Silicon Solution	LPDDR2 DRAM		134	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA134,10X17,25		.65 mm	85 Cel	3-STATE	128MX32	128M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	1.1 mm	400 MHz	10 mm		4294967296 bit	1.14 V	also operates with 1.8v nom supply			260		4,8,16	11.5 mm
IS43QR16256B-075UBLI	Integrated Silicon Solution	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	385 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1333.33 MHz	7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH			260	.062 Amp	8	13.5 mm
IS43QR16256B-075UBL	Integrated Silicon Solution	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	385 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	1.14 V	0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1333.33 MHz	7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH			260	.062 Amp	8	13.5 mm
IS43QR16512A-075VBLI	Integrated Silicon Solution	DDR4 DRAM	INDUSTRIAL	96	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	375 mA	536870912 words	4,8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	1	1.26 V	1.2 mm	1333 MHz	10 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.025 Amp	4,8	14 mm
IS43QR16512A-075VBL	Integrated Silicon Solution	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	375 mA	536870912 words	4,8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	512MX16	512M		0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1333 MHz	10 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH			260	.025 Amp	4,8	14 mm
IS43TR16256BL-107MBLI-TR	Integrated Silicon Solution	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	254 mA	268435456 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	934.5 MHz	9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.028 Amp	4,8	13 mm
IS43TR16256BL-125KBLI-TR	Integrated Silicon Solution	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	228 mA	268435456 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.028 Amp	4,8	13 mm
IS43TR16256BL-125KBL-TR	Integrated Silicon Solution	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			13 mm
IS46TR16256BL-125KBLA2-TR	Integrated Silicon Solution	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	228 mA	268435456 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	105 Cel		256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.028 Amp	4,8	13 mm
IS42SM16200D-6BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	3	3.6 V	1.2 mm		8 mm		33554432 bit	2.7 V	AUTO/SELF REFRESH	e1					8 mm	5.5 ns
IS42VM16200D-6BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	3	1.95 V	1.2 mm		8 mm		33554432 bit	1.7 V	AUTO/SELF REFRESH	e1					8 mm	5.5 ns
IS42VM16200D-75BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	3	1.95 V	1.2 mm		8 mm		33554432 bit	1.7 V	AUTO/SELF REFRESH	e1					8 mm	6 ns
IS42VS16160J-75TLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		1.8		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		16MX16	16M		-40 Cel		DUAL	1	R-PDSO-G54		1.9 V	1.2 mm		10.16 mm		268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	5.4 ns
IS43TR16128C-15HBL	Integrated Silicon Solution	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	e1	10	260			13 mm
IS42S16100H-7BL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	60	TFBGA	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	60 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,7X15,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX16	1M		0 Cel		BOTTOM	1	R-PBGA-B60		3.6 V	1.2 mm	143 MHz	6.4 mm	Not Qualified	16777216 bit	3 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH				.002 Amp	1,2,4,8	10.1 mm	5.5 ns
IS42S16400J-6TLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	150 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3	3.6 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e3			.002 Amp	1,2,4,8	22.22 mm	5.4 ns
IS43LD16640C-25BLI	Integrated Silicon Solution	LPDDR2 DRAM	INDUSTRIAL	134	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.65 mm	85 Cel		64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B134		1.3 V	1.1 mm		10 mm		1073741824 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	10	260			11.5 mm
IS43TR81024BL-107MBL	Integrated Silicon Solution	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		1GX8	1G		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78	3	1.45 V	1.2 mm		10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	10	260			14 mm
IS42S16160J-7BL-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	54	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		16MX16	16M		0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		3.6 V	1.2 mm		8 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e1		260			8 mm	5.4 ns
IS42S16160J-7TLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		16MX16	16M		-40 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	5.4 ns
IS43LD32640B-18BLI-TR	Integrated Silicon Solution	LPDDR2 DRAM	INDUSTRIAL	134	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.65 mm	85 Cel		64MX32	64M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	1.1 mm		10 mm		2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
IS43TR16512BL-125KBLI-TR	Integrated Silicon Solution	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	95 mA	536870912 words	4,8	YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32		.8 mm	95 Cel		512MX16	512M	1.283 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	10	260	.055 Amp	4,8	14 mm
IS43TR16128DL-107MBL	Integrated Silicon Solution	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	216 mA	134217728 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	128MX16	128M	1.283 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	934.58 MHz	9 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	10	260	.016 Amp	4,8	13 mm
IS42S32800J-7BL-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		3.3		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		8MX32	8M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.2 mm		8 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e1	10	260			13 mm	5.4 ns
IS42S16400J-6BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		3.6 V	1.2 mm	166 MHz	8 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e1			.002 Amp	1,2,4,8	8 mm	5.4 ns
IS43TR81024BL-107MBLI	Integrated Silicon Solution	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		1GX8	1G		-40 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
IS46TR16640CL-107MBLA2	Integrated Silicon Solution	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	105 Cel		64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH						13 mm
IS43LQ32256A-062BLI	Integrated Silicon Solution	LPDDR4 DRAM		200	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	16,32	NO	COMMON			32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	85 Cel		256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.95 V	1.1 mm	1600 MHz	10 mm		8589934592 bit	1.7 V	TERM PITCH-MAX; ALSO REQUIRE SUPPLY VOLTAGE 1.06V TO 1.17V					16,32	14.5 mm
IS43LQ16128A-062BLI	Integrated Silicon Solution	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	16,32	NO	COMMON			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel		128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.95 V	.85 mm	1600 MHz	10 mm		2147483648 bit	1.7 V	terminal pitch-max					16,32	14.5 mm
IS43QR16256B-083RBLI-TR	Integrated Silicon Solution	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	375 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.26 V	1.2 mm	1200.48 MHz	7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH		30	260	.058 Amp	8	13.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.