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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT28LV256-25PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	Tin/Lead (Sn/Pb)	DUAL			R-PDIP-T28		3.465 V	5.59 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	10 ms	262144 bit	3.135 V	AUTOMATIC WRITE	64	e0			.00002 Amp	36.95 mm	250 ns	3	YES
AT28LV256-25PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	Tin/Lead (Sn/Pb)	DUAL			R-PDIP-T28		3.465 V	5.59 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	10 ms	262144 bit	3.135 V	AUTOMATIC WRITE	64	e0			.00005 Amp	36.95 mm	250 ns	3	YES
AT28C256-15PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	10	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	Tin/Lead (Sn/Pb)	DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0	30	225	.0002 Amp	37.0205 mm	150 ns	5	YES
AT28C256-15PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	Tin/Lead (Sn/Pb)	DUAL			R-PDIP-T28		5.5 V	4.826 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0	30	240	.0002 Amp	37.0205 mm	150 ns	5	YES
AT28C256F-15PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD	DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	3 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0002 Amp	37.0205 mm	150 ns	5	YES
AT28HC256-12PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD	DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	37.0205 mm	120 ns	5	YES
AT28HC256-70PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD	DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				37.0205 mm	70 ns	5	YES
AT28HC256E-12PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD	DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	37.0205 mm	120 ns	5	YES
AT28C256E-15SC	Atmel	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD	DUAL			R-PDSO-G28	2	5.5 V	2.65 mm	100000 Write/Erase Cycles	7.5 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		240	.0002 Amp	17.9 mm	150 ns	5	YES
AT28BV256-20SC	Atmel	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN LEAD	DUAL			R-PDSO-G28	2	3.6 V	2.65 mm	10000 Write/Erase Cycles	7.5 mm	Not Qualified	10 ms	262144 bit	2.7 V	AUTOMATIC WRITE	64	e0		240	.00002 Amp	17.9 mm	200 ns	3	YES
AT28BV256-20SI	Atmel	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs	10	1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G28	2	3.6 V	2.65 mm	10000 Write/Erase Cycles	7.5 mm	Not Qualified	10 ms	262144 bit	2.7 V	AUTOMATIC WRITE	64	e0		240	.00005 Amp	17.9 mm	200 ns	3	YES
AT28BV256-20TI	Atmel	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD	DUAL			R-PDSO-G28	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	10 ms	262144 bit	2.7 V	AUTOMATIC WRITE	64	e0		240	.00005 Amp	11.8 mm	200 ns	3	YES
CAT28C256L15	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	100	2.54 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN	DUAL			R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e3			.00015 Amp	36.695 mm	150 ns	5	YES
CAT28C256LI-15	Catalyst Semiconductor	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN	DUAL			R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e3			.00015 Amp	36.695 mm	150 ns	5	YES
CAT28C64BL-12	Catalyst Semiconductor	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN	DUAL			R-PDIP-T28		5.5 V	5.08 mm	1000000 Write/Erase Cycles	15.24 mm	Not Qualified	5 ms	65536 bit	4.5 V		32	e3			.0001 Amp	36.695 mm	120 ns	5	YES
W27C512-45Z	Winbond Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words	5			8	IN-LINE				2.54 mm	70 Cel		64KX8	64K	0 Cel			DUAL			R-PDIP-T28		5.25 V	5.33 mm		15.24 mm	Not Qualified		524288 bit	4.75 V				NOT SPECIFIED	NOT SPECIFIED		37.08 mm	45 ns	12
AT28C64B-15TU-T	Microchip Technology	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE			10	.55 mm	85 Cel		8KX8	8K	-40 Cel		MATTE TIN	DUAL			R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm		10 ms	65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE		e3				11.8 mm	150 ns	5
AT28C256-15DM/883-815	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	125 Cel		32KX8	32K	-55 Cel		TIN LEAD	DUAL			R-GDIP-T28		5.5 V	5.72 mm		15.24 mm		10 ms	262144 bit	4.5 V			e0				37.215 mm	150 ns	5
AT28BV256-20SU-T	Microchip Technology	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3	YES		8	SMALL OUTLINE	SOP28,.4			1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G28	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	7.5 mm		10 ms	262144 bit	2.7 V	THE PART EXISTS IN EEPROM3V	64	e3	30	260	.00005 Amp	17.9 mm	200 ns	3
AT28HC256E-12SU-202	Microchip Technology	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		32KX8	32K	-40 Cel			DUAL			R-PDSO-G28		5.5 V	2.65 mm		7.5 mm		10 ms	262144 bit	4.5 V							17.9 mm	120 ns	5
AT28C256F-15DM/883-815	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES		8	IN-LINE	DIP28,.6		10	2.54 mm	125 Cel		32KX8	32K	-55 Cel	NO		DUAL	1		R-GDIP-T28		5.5 V	5.72 mm	10000 Write/Erase Cycles	15.24 mm		3 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64				.0003 Amp	37.215 mm	150 ns	5	YES
AT28HC256E-12SU-T	Microchip Technology	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	DUAL			R-PDSO-G28	3	5.5 V	2.65 mm		7.5 mm		10 ms	262144 bit	4.5 V			e3	30	260		17.9 mm	120 ns	5
AT28HC256E-90TU-T	Microchip Technology	EEPROM	INDUSTRIAL	28	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, THIN PROFILE				.55 mm	85 Cel		32KX8	32K	-40 Cel			DUAL			R-PDSO-G28		5.5 V	1.2 mm		8 mm		10 ms	262144 bit	4.5 V							11.8 mm	90 ns	5
AT28HC256F-90SU-T	Microchip Technology	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	DUAL			R-PDSO-G28	3	5.5 V	2.65 mm		7.5 mm		3 ms	262144 bit	4.5 V			e3	30	260		17.9 mm	90 ns	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.