32 EEPROM 23

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT28C16-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	2	5.5 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	1 ms	16384 bit	4.5 V	AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS		e0		225	.0001 Amp	13.97 mm	200 ns	5	YES
AT28C16-20JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	45 mA	2048 words		5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	2	5.5 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	1 ms	16384 bit	4.5 V	AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS		e0		225	.0001 Amp	13.97 mm	200 ns	5	YES
AT28LV256-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	2	3.465 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	3.135 V	AUTOMATIC WRITE	64	e0		225	.00002 Amp	13.97 mm	200 ns	3	YES
EPC1064VTC32	Altera	CONFIGURATION MEMORY	COMMERCIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	MOS		GULL WING		SYNCHRONOUS		65536 words	COMMON	3.3		3.3	1	FLATPACK, LOW PROFILE	TQFP32,.35SQ,32	OTP ROMs		.8 mm	70 Cel	3-STATE	64KX1	64K	0 Cel		TIN LEAD	QUAD			S-PQFP-G32	3	3.6 V	1.27 mm		4 MHz	7 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES		e0		220		7 mm
AT28C256-15JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225	.0002 Amp	13.97 mm	150 ns	5	YES
AT28C256-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225	.0002 Amp	13.97 mm	200 ns	5	YES
AT28HC256-12JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225	.0003 Amp	13.97 mm	120 ns	5	YES
AT28C010E-15TI	Atmel	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	EEPROMs		.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	NO	TIN LEAD	DUAL			R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms	1048576 bit	4.5 V	AUTOMATIC WRITE	128	e0		240	.0002 Amp	18.4 mm	150 ns	5	YES
AT28C64B-15JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	400 mA	8192 words		5			8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		8KX8	8K	-40 Cel		MATTE TIN	QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms	65536 bit	4.5 V			e3	40	245	.0001 Amp	13.97 mm	150 ns	5
AT28LV010-20JU-051	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		3.3			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel			QUAD			R-PQCC-J32		3.465 V	3.556 mm			11.43 mm		10 ms	1048576 bit	3.135 V				NOT SPECIFIED	NOT SPECIFIED		13.97 mm	200 ns	3
AT28LV010-20JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3			8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN	QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms	1048576 bit	3.135 V			e3			.00005 Amp	13.97 mm	200 ns	3
AT28LV010-20JU-319	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3			8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN	QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32	3	3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms	1048576 bit	3.135 V			e3	40	245	.00005 Amp	13.97 mm	200 ns	3
AT28LV010-20JU-630	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3			8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN	QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms	1048576 bit	3.135 V			e3			.00005 Amp	13.97 mm	200 ns	3
AT28LV010-20TU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3			8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		10	.5 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles		8 mm		10 ms	1048576 bit	3.135 V			e3			.00005 Amp	18.4 mm	200 ns	3
AT28LV010-20TU-319	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3			8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		10	.5 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles		8 mm		10 ms	1048576 bit	3.135 V			e3			.00005 Amp	18.4 mm	200 ns	3
AT28C256-15JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm		10 ms	262144 bit	4.5 V			e3	40	245		13.97 mm	150 ns	5
AT28C256E-15JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm			262144 bit	4.5 V			e3	40	245		13.97 mm	150 ns	5
AT28HC256E-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm			262144 bit	4.5 V			e3	40	245		13.97 mm	120 ns	5
AT28C010-12JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5			8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K	-40 Cel			DUAL			R-PDSO-G32		5.5 V	3.556 mm			11.43 mm		10 ms	1048576 bit	4.5 V							13.97 mm	120 ns	5
AT28C010E-12JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5			8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K	-40 Cel			DUAL			R-PDSO-G32		5.5 V	3.556 mm			11.43 mm		10 ms	1048576 bit	4.5 V							13.97 mm	120 ns	5
AT28HC64B-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES		8	SMALL OUTLINE	SOP8,.16		10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO		DUAL	1		R-PDSO-G32		5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms	65536 bit	4.5 V		64				.0001 Amp	13.97 mm	120 ns	5	YES
AT28HC64BF-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES		8	SMALL OUTLINE	SOP8,.16		10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN	DUAL	1		R-PDSO-G32	1	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms	65536 bit	4.5 V		64	e3	30	245	.0001 Amp	13.97 mm	120 ns	5	YES
AT28HC256E-90JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel		Matte Tin (Sn)	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm		10 ms	262144 bit	4.5 V	AUTOMATIC WRITE		e3	40	245		13.97 mm	90 ns	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.