48 EEPROM 16

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TC58NVG1S3ETA00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel		256MX8	256M	0 Cel	2K	YES	TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified	2147483648 bit	2.7 V		2K	e3		260	NAND TYPE	.00005 Amp	18.4 mm	25 ns	3	NO
TC58NVG2S0FTA00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		512MX8	512M	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm		4294967296 bit	2.7 V								18.4 mm		3
TH58NVG4S0FTA20	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		2GX8	2G	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm		17179869184 bit	2.7 V								18.4 mm		3
TH58NVG5S0FTA20	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		4GX8	4G	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm		34359738368 bit	2.7 V								18.4 mm		3
TH58NVG5S0FTAK0	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		4GX8	4G	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm		34359738368 bit	2.7 V								18.4 mm		3
XCF08PFS48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		40 mA	8388608 words	1.8		1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	20	.8 mm	85 Cel		8MX1	8M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	8 mm	Not Qualified	8388608 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e0	30	240	NOR TYPE	.001 Amp	9 mm
XCF08PVO48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		40 mA	8388608 words	1.8		1.5/3.3,1.8	1	SMALL OUTLINE	TSSOP48,.8,20	Flash Memories		.5 mm	85 Cel		8MX1	8M	-40 Cel			Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	12 mm	Not Qualified	8388608 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e0	30	225	NOR TYPE	.001 Amp	18.45 mm
XCF16PFS48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		40 mA	16777216 words	1.8		1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	20	.8 mm	85 Cel		16MX1	16M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles		8 mm	Not Qualified	16777216 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e0	30	240	NOR TYPE		9 mm
XCF32PFS48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		40 mA	33554432 words	1.8		1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	20	.8 mm	85 Cel		32MX1	32M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles		8 mm	Not Qualified	33554432 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e0	30	240	NOR TYPE		9 mm
XCF08PFSG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		40 mA	8388608 words	1.8		1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories		.8 mm	85 Cel		8MX1	8M	-40 Cel			Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)		BOTTOM		R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	8 mm	Not Qualified	8388608 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e2	30	260	NOR TYPE	.001 Amp	9 mm
XCF08PVOG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		40 mA	8388608 words	1.8		1.5/3.3,1.8	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories		.5 mm	85 Cel		8MX1	8M	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	12 mm	Not Qualified	8388608 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e3	30	260	NOR TYPE	.001 Amp	18.45 mm
XCF16PFSG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		40 mA	16777216 words	1.8		1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	20	.8 mm	85 Cel		16MX1	16M	-40 Cel			Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)		BOTTOM		R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles		8 mm	Not Qualified	16777216 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e2	30	260	NOR TYPE		9 mm
XCF16PVOG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		40 mA	16777216 words	1.8		1.5/3.3,1.8	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories	20	.5 mm	85 Cel		16MX1	16M	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles		12 mm	Not Qualified	16777216 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e3	30	260	NOR TYPE		18.45 mm
XCF32PFSG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		40 mA	33554432 words	1.8		1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	20	.8 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel			Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)		BOTTOM	HARDWARE	R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles	50 MHz	8 mm	Not Qualified	33554432 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e2	30	260	NOR TYPE		9 mm		1.8
XCF32PVOG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		40 mA	33554432 words	1.8		1.5/3.3,1.8	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories	20	.5 mm	85 Cel		32MX1	32M	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles		12 mm	Not Qualified	33554432 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e3	30	260	NOR TYPE	.001 Amp	18.45 mm
XQF32PVOG48M	Xilinx	CONFIGURATION MEMORY	MILITARY	48	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		40 mA	33554432 words	1.8		1.8/3.3,1.8	1	SMALL OUTLINE	TSSOP48,.8,20	Flash Memories	20	.5 mm	125 Cel		32MX1	32M	-55 Cel			NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G48	3	2 V		20000 Write/Erase Cycles			Not Qualified	33554432 bit	1.65 V			e4	30	260	NOR TYPE			30 ns

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.