DIE EEPROM 8

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Part	Manufacturer	Memory IC Type	Temperature Grade	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Endurance	Maximum Clock Frequency (fCLK)	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Standby Current	Programming Voltage (V)
SRI512-SBN18/1GE	STMicroelectronics	EEPROM	OTHER	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		32 words		3		16	UNCASED CHIP				85 Cel			32X16	32	-20 Cel		UPPER			X-XUUC-N	3.5 V			5 ms		512 bit	2.5 V			3
SRI512-W4/1GE	STMicroelectronics	EEPROM	OTHER	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		32 words		3		16	UNCASED CHIP				85 Cel			32X16	32	-20 Cel		UPPER			X-XUUC-N	3.5 V			5 ms		512 bit	2.5 V			3
M24LR04E-RUW20/2	STMicroelectronics	EEPROM	INDUSTRIAL	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words		2.5		32	UNCASED CHIP		8		85 Cel			128X32	128	-40 Cel		UPPER			X-XUUC-N	5.5 V		.4 MHz	5 ms	I2C	4096 bit	1.8 V
11AA010-I/WF16K	Microchip Technology	EEPROM	INDUSTRIAL	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	128 words		5	NO	8	UNCASED CHIP	DIE OR CHIP		200	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel	NO	UPPER	1	SOFTWARE	R-XUUC-N	5.5 V	1000000 Write/Erase Cycles	.1 MHz	10 ms	1-WIRE	1024 bit	2.5 V		.000005 Amp
11AA020-I/S16K	Microchip Technology	EEPROM	INDUSTRIAL	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words		5	NO	8	UNCASED CHIP	DIE OR CHIP		200	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel	NO	UPPER	1	SOFTWARE	R-XUUC-N	5.5 V	1000000 Write/Erase Cycles	.1 MHz	10 ms	1-WIRE	2048 bit	2.5 V		.000005 Amp
11AA020-I/W16K	Microchip Technology	EEPROM	INDUSTRIAL	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words		5	NO	8	UNCASED CHIP	DIE OR CHIP		200	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel	NO	UPPER	1	SOFTWARE	R-XUUC-N	5.5 V	1000000 Write/Erase Cycles	.1 MHz	10 ms	1-WIRE	2048 bit	2.5 V		.000005 Amp
11AA020-I/WF16K	Microchip Technology	EEPROM	INDUSTRIAL	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words		5	NO	8	UNCASED CHIP	DIE OR CHIP		200	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel	NO	UPPER	1	SOFTWARE	R-XUUC-N	5.5 V	1000000 Write/Erase Cycles	.1 MHz	10 ms	1-WIRE	2048 bit	2.5 V		.000005 Amp
25LC320/WF	Microchip Technology	EEPROM	COMMERCIAL	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	5 mA	4096 words	SEPARATE	5		8	UNCASED CHIP	DIE OR CHIP		200	70 Cel		3-STATE	4KX8	4K	0 Cel		UPPER	1	HARDWARE	R-XUUC-N	5.5 V	1000000 Write/Erase Cycles	10 MHz	5 ms	SPI	32768 bit	4.5 V	ALSO OPERATES WITH 2.5V MIN @ 5MHZ AND 1.8VMIN @3MHZ		5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.