QCCJ EEPROM 68

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
XC17V16PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD			S-PQCC-J44	3	3.6 V	4.57 mm		20 MHz	16.5862 mm	Not Qualified		16777216 bit	3 V		e0	30	225		.001 Amp	16.5862 mm
XC17V16PC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD			S-PQCC-J44	3	3.6 V	4.57 mm		20 MHz	16.5862 mm	Not Qualified		16777216 bit	3 V		e0	30	225		.001 Amp	16.5862 mm
XC18V02PC44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		262144 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		256KX8	256K	-40 Cel	TIN LEAD	QUAD			S-PQCC-J44	3	3.6 V	4.572 mm			16.5862 mm	Not Qualified		2097152 bit	3 V		e0					16.5862 mm	20 ns
XC17256EPCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Matte Tin (Sn)	QUAD			S-PQCC-J20	3	5.25 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified		262144 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245		.00005 Amp	8.9662 mm
XC18V01PCG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel	Matte Tin (Sn)	QUAD			S-PQCC-J20	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified		1048576 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V02PCG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel	Matte Tin (Sn)	QUAD			S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified		2097152 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	16.5862 mm	20 ns
XC18V04PCG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	Matte Tin (Sn)	QUAD			S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified		4194304 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	16.5862 mm	20 ns
XC18V512PCG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	20	1.27 mm	85 Cel		64KX8	64K	-40 Cel	Matte Tin (Sn)	QUAD			S-PQCC-J20	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified		524288 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC1701LPCG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Matte Tin (Sn)	QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified		1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245		.00005 Amp	8.9662 mm
XC1701L-PCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Matte Tin (Sn)	QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified		1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245		.00005 Amp	8.9662 mm
XC17128EPCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	128KX1	128K	0 Cel	Matte Tin (Sn)	QUAD			S-PQCC-J20	3	5.25 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified		131072 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245		.00005 Amp	8.9662 mm
AT28C64B-15JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	400 mA	8192 words		5		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		8KX8	8K	-40 Cel	MATTE TIN	QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms	65536 bit	4.5 V		e3	40	245		.0001 Amp	13.97 mm	150 ns	5
AT28LV010-20JU-051	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel		QUAD			R-PQCC-J32		3.465 V	3.556 mm			11.43 mm		10 ms	1048576 bit	3.135 V			NOT SPECIFIED	NOT SPECIFIED			13.97 mm	200 ns	3
AT28LV010-20JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms	1048576 bit	3.135 V		e3				.00005 Amp	13.97 mm	200 ns	3
AT28LV010-20JU-319	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32	3	3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms	1048576 bit	3.135 V		e3	40	245		.00005 Amp	13.97 mm	200 ns	3
AT28LV010-20JU-630	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms	1048576 bit	3.135 V		e3				.00005 Amp	13.97 mm	200 ns	3
AT28C256-15JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel	MATTE TIN	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm		10 ms	262144 bit	4.5 V		e3	40	245			13.97 mm	150 ns	5
AT28C256E-15JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel	MATTE TIN	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm			262144 bit	4.5 V		e3	40	245			13.97 mm	150 ns	5
AT28HC256E-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel	MATTE TIN	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm			262144 bit	4.5 V		e3	40	245			13.97 mm	120 ns	5
AT28HC256E-90JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER				1.27 mm	85 Cel		32KX8	32K	-40 Cel	Matte Tin (Sn)	QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm		10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	e3	40	245			13.97 mm	90 ns	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.