SON EEPROM 5

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
M95320-DRMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		5 mA	4096 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel			4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles			Not Qualified		SPI	32768 bit		e4	30	260	.000001 Amp
LE24512AQF-AH	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		5 mA	65536 words		1.8/3.3	8	SMALL OUTLINE	SOLCC8,.12,20		EEPROMs	20	.5 mm	85 Cel			64KX8	64K	-40 Cel	MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	3		1000000 Write/Erase Cycles			Not Qualified		I2C	524288 bit		e3	30	260	.000002 Amp
M24256-BFMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		5 mA	32768 words		1.8/5	8	SMALL OUTLINE	SOLCC8,.12,20		EEPROMs	40	.5 mm	85 Cel			32KX8	32K	-40 Cel	MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles			Not Qualified		I2C	262144 bit		e3			.000001 Amp
M95512-DRMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		8 mA	65536 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel			64KX8	64K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1		1000000 Write/Erase Cycles			Not Qualified		SPI	524288 bit		e4	30	260	.000005 Amp
93AA46CT-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	64 words	5	2/5	16	SMALL OUTLINE	SOLCC8,.11,20	8	EEPROMs	200	.5 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel	NICKEL PALLADIUM GOLD		YES	DUAL	1	SOFTWARE	R-PDSO-N8	1	5.5 V	1000000 Write/Erase Cycles	3 MHz	2 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	1.8 V	e4	40	260	.000001 Amp	3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.