SOP EEPROM 302

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M24C64-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel		TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	2.5 V			e0				.000002 Amp	4.9 mm
M93C76-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	512 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	512X16	512	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	8192 bit	2.5 V			e0				.00001 Amp	4.9 mm
M93C46-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e0				.000005 Amp	4.9 mm
M93C46-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e0				.000005 Amp	4.9 mm
M93C56-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	128X16	128	-40 Cel				DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V			e0	NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	4.9 mm
M93C66-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V			e0				.000002 Amp	4.9 mm
M93C66-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V			e0				.000002 Amp	4.9 mm
M93C86-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	1KX16	1K	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	16384 bit	2.5 V			e0				.000002 Amp	4.9 mm
M93C46-MN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V			e0				.00005 Amp	4.9 mm
M93C46-MN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel				DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V							.00005 Amp	4.9 mm
M93C56-MN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	128X16	128	-40 Cel				DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	4.5 V							.000015 Amp	4.9 mm
M93C66-MN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V			e0				.000015 Amp	4.9 mm
M93C66-MN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel				DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V							.000015 Amp	4.9 mm
M93C86-MN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	1KX16	1K	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	16384 bit	4.5 V			e0				.000015 Amp	4.9 mm
M93C86-MN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	1KX16	1K	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	16384 bit	4.5 V			e0				.000015 Amp	4.9 mm
M24256-WMW6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words		5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	32KX8	32K	-40 Cel		TIN LEAD	1010000R	DUAL		HARDWARE	R-PDSO-G8		5.5 V	2.03 mm	100000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	10 ms	I2C	262144 bit	2.5 V			e0				.000002 Amp	5.3 mm
M95080-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		4.5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	1KX8	1K	-40 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	SPI	8192 bit	2.5 V	MINIMUM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e0				.000002 Amp	4.9 mm
M95080-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		4.5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	1KX8	1K	-40 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	SPI	8192 bit	2.5 V	MINIMUM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e0				.000002 Amp	4.9 mm
M95160-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		4.5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	SPI	16384 bit	2.5 V	MINIMUM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e0				.000002 Amp	4.9 mm
M24C01-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	128X8	128	-40 Cel		TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e0				.000001 Amp	4.9 mm
M24C02-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V			e0				.000001 Amp	4.9 mm
M24C04-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	512X8	512	-40 Cel		TIN LEAD	1010DDMR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e0				.000001 Amp	4.9 mm
M24C04-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	512X8	512	-40 Cel		TIN LEAD	1010DDMR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e0				.000001 Amp	4.9 mm
M34C02-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		TIN LEAD	1010DDDR	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e0				.0000005 Amp	4.9 mm
M93S46-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e0				.000005 Amp	4.9 mm
M93S46-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel				DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e0				.000005 Amp	4.9 mm
M93S56-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	128X16	128	-40 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V			e0				.000005 Amp	4.9 mm
M93S56-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	128X16	128	-40 Cel				DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V			e0				.000005 Amp	4.9 mm
M93S66-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V			e0				.000005 Amp	4.9 mm
M95080-MN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	1024 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	1KX8	1K	-40 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	10 ms	SPI	8192 bit	4.5 V	MINIMUM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e0				.00001 Amp	4.9 mm
M95160-MN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	2048 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	10 ms	SPI	16384 bit	4.5 V	MINIMUM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e0				.00001 Amp	4.9 mm
M24C02-MN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	4.5 V			e0				.000001 Amp	4.9 mm
M24C04-MN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	512X8	512	-40 Cel		TIN LEAD	1010DDMR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	4.5 V			e0				.000001 Amp	4.9 mm
M24C04-MN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	512X8	512	-40 Cel		TIN LEAD	1010DDMR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	4.5 V			e0				.000001 Amp	4.9 mm
M95128-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words		3.3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		16KX8	16K	-40 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	131072 bit	2.5 V	100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e0				.000001 Amp	4.9 mm
XC1701SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	1048576 words	COMMON	5		5	1	SMALL OUTLINE	SOP20,.4		OTP ROMs		1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G20	3	5.25 V	2.6416 mm		15 MHz	7.5184 mm	Not Qualified			1048576 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	12.827 mm
XC1701SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	1048576 words	COMMON	5		5	1	SMALL OUTLINE	SOP20,.4		OTP ROMs		1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G20	3	5.5 V	2.6416 mm		15 MHz	7.5184 mm	Not Qualified			1048576 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	12.827 mm
XC17512LSO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	524288 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4		OTP ROMs		1.27 mm	70 Cel	3-STATE	512KX1	512K	0 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G20	3	3.6 V	2.6416 mm		15 MHz	7.5184 mm	Not Qualified			524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	12.827 mm
XC17512LSO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	524288 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4		OTP ROMs		1.27 mm	85 Cel	3-STATE	512KX1	512K	-40 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G20	3	3.6 V	2.6416 mm		15 MHz	7.5184 mm	Not Qualified			524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	12.827 mm
25LC512-M/SN	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words		5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	125 Cel		64KX8	64K	-55 Cel		MATTE TIN		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		5 ms	SPI	524288 bit	2.5 V			e3	30	260		.00002 Amp	4.9 mm		5
25LC512T-M/SN	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words		5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	125 Cel		64KX8	64K	-55 Cel		MATTE TIN		DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		5 ms	SPI	524288 bit	2.5 V			e3				.00002 Amp	4.9 mm		5
AT28BV256-20SC	Atmel	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN LEAD		DUAL			R-PDSO-G28	2	3.6 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		262144 bit	2.7 V	AUTOMATIC WRITE	64	e0		240		.00002 Amp	17.9 mm	200 ns	3	YES
AT28BV256-20SI	Atmel	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4		EEPROMs	10	1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G28	2	3.6 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		262144 bit	2.7 V	AUTOMATIC WRITE	64	e0		240		.00005 Amp	17.9 mm	200 ns	3	YES
24AA128-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel	OPEN-DRAIN	16KX8	16K	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V			e3	40	260		.000005 Amp	5.26 mm		2.5
24AA64T-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		4.5		2/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260		.000001 Amp	5.245 mm		4.5
24LC64-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		4.5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	125 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260		.000005 Amp	5.245 mm		4.5
24LC64T-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		4.5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	125 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260		.000005 Amp	5.245 mm		4.5
XC18V01SO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3		2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4		Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel		TIN LEAD		DUAL			R-PDSO-G20	3	3.6 V	2.6416 mm	20000 Write/Erase Cycles	33 MHz	7.5184 mm	Not Qualified			1048576 bit	3 V			e0	30	225	NOR TYPE	.01 Amp	12.827 mm	15 ns

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.