RECTANGULAR EEPROM 702

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
XC17128EVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	128KX1	128K	0 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	5.25 V	1.1938 mm		15 MHz	3.937 mm	Not Qualified			131072 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	4.9276 mm
XC17128EVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		OTP ROMs		1.27 mm	85 Cel	3-STATE	128KX1	128K	-40 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	5.5 V	1.1938 mm		15 MHz	3.937 mm	Not Qualified			131072 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	4.9276 mm
XC17256ELVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	262144 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		OTP ROMs		1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	3.6 V	1.1938 mm		15 MHz	3.937 mm	Not Qualified			262144 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	4.9276 mm
XC17256EVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	5.25 V	1.1938 mm		15 MHz	3.937 mm	Not Qualified			262144 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	4.9276 mm
XC17256EVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		OTP ROMs		1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	5.5 V	1.1938 mm		15 MHz	3.937 mm	Not Qualified			262144 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	4.9276 mm
XC1736ESO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	SMALL OUTLINE	SOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	36288X1	36288	0 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	5.25 V	1.7272 mm		10 MHz	3.937 mm	Not Qualified			36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	4.9276 mm
XC1736ESO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	SMALL OUTLINE	SOP8,.25		OTP ROMs		1.27 mm	85 Cel	3-STATE	36288X1	36288	-40 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	5.5 V	1.7272 mm		10 MHz	3.937 mm	Not Qualified			36288 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	4.9276 mm
XC1736EVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	36288X1	36288	0 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	5.25 V	1.1938 mm		10 MHz	3.937 mm	Not Qualified			36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	4.9276 mm
XC1736EVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		OTP ROMs		1.27 mm	85 Cel	3-STATE	36288X1	36288	-40 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	5.5 V	1.1938 mm		10 MHz	3.937 mm	Not Qualified			36288 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	4.9276 mm
XC1765ELSO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	3.6 V	1.7272 mm		2.5 MHz	3.937 mm	Not Qualified			65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	4.9276 mm
XC1765ELSO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP8,.25		OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	3.6 V	1.7272 mm		2.5 MHz	3.937 mm	Not Qualified			65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	4.9276 mm
XC1765ELVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	3.6 V	1.1938 mm		2.5 MHz	3.937 mm	Not Qualified			65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	4.9276 mm
XC1765ELVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	3.6 V	1.1938 mm		2.5 MHz	3.937 mm	Not Qualified			65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	4.9276 mm
XC1765ESO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	SMALL OUTLINE	SOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	5.25 V	1.7272 mm		10 MHz	3.937 mm	Not Qualified			65536 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	4.9276 mm
XC1765ESO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	SMALL OUTLINE	SOP8,.25		OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	5.5 V	1.7272 mm		10 MHz	3.937 mm	Not Qualified			65536 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	4.9276 mm
XC1765EVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	5.25 V	1.1938 mm		10 MHz	3.937 mm	Not Qualified			65536 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	4.9276 mm
XC1765EVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	5.5 V	1.1938 mm		10 MHz	3.937 mm	Not Qualified			65536 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	4.9276 mm
AT24C02N-10SI	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	4.5 V	2-WIRE SERIAL INTERFACE		e0			.000018 Amp	4.89 mm
AT24C08N-10SI	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel		Tin/Lead (Sn/Pb)		DUAL			R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	8192 bit	4.5 V	2-WIRE SERIAL INTERFACE		e0	30	240	.000018 Amp	4.89 mm
M95512-DRDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	65536 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		64KX8	64K	-40 Cel				DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.4 mm
M95512-DRMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	65536 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-40 Cel				DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.9 mm
M95512-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	8 mA	65536 words		2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V			e4	30	260	.000005 Amp	3 mm
24AA128-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel	OPEN-DRAIN	16KX8	16K	-40 Cel		Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V			e3	40	260	.000005 Amp	4.4 mm		2.5
AT17LV256-10PC	Atmel	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	262144 words		3.3		3.3	1	IN-LINE	DIP8,.3		EEPROMs		2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		TIN LEAD		DUAL			R-PDIP-T8	1	3.6 V	5.334 mm		10 MHz	7.62 mm	Not Qualified			262144 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e0			.00005 Amp	9.271 mm	75 ns
AT17C256-10PI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words		5		5	1	IN-LINE	DIP8,.3		EEPROMs		2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		TIN LEAD		DUAL			R-PDIP-T8		5.5 V	4.318 mm		12.5 MHz	7.62 mm	Not Qualified			262144 bit	4.5 V			e0			.00015 Amp	9.398 mm	55 ns
AT17C128-10SI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words		5		5	1	SMALL OUTLINE	SOP20,.4		EEPROMs		1.27 mm	85 Cel	3-STATE	128KX1	128K	-40 Cel		TIN LEAD		DUAL			R-PDSO-G20		5.5 V	2.65 mm			7.5 mm	Not Qualified			131072 bit	4.5 V			e0			.002 Amp	12.8 mm	55 ns
AT28C010E-15TI	Atmel	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs		.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	NO	TIN LEAD		DUAL			R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		1048576 bit	4.5 V	AUTOMATIC WRITE	128	e0		240	.0002 Amp	18.4 mm	150 ns	5	YES
M24C32-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	4096 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	OPEN-DRAIN	4KX8	4K	-40 Cel		TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	32768 bit	2.5 V			e0			.000002 Amp	9.27 mm
M24C32-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	1 mA	4096 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	4KX8	4K	-40 Cel		TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	32768 bit	2.5 V			e0			.000002 Amp	4.9 mm
M24C64-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel		TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	2.5 V			e0			.000002 Amp	4.9 mm
M93C46-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel	3-STATE	64X16	64	-40 Cel		Tin/Lead (Sn/Pb)		DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e0			.000005 Amp	9.27 mm
M93C56-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel	3-STATE	128X16	128	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V			e0			.00001 Amp	9.27 mm
M93C76-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	512 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	512X16	512	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	8192 bit	2.5 V			e0			.00001 Amp	4.9 mm
M93C46-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e0			.000005 Amp	4.9 mm
M93C46-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e0			.000005 Amp	4.9 mm
M93C56-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	128X16	128	-40 Cel				DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V			e0	NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.9 mm
M93C66-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V			e0			.000002 Amp	4.9 mm
M93C66-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V			e0			.000002 Amp	4.9 mm
M93C86-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	1KX16	1K	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	16384 bit	2.5 V			e0			.000002 Amp	4.9 mm
M93C46-BN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words		5		5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel	3-STATE	64X16	64	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V			e0			.00005 Amp	9.27 mm
M93C46-MN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V			e0			.00005 Amp	4.9 mm
M93C46-MN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel				DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V						.00005 Amp	4.9 mm
M93C56-MN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	128X16	128	-40 Cel				DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	4.5 V						.000015 Amp	4.9 mm
M93C66-MN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V			e0			.000015 Amp	4.9 mm
M93C66-MN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel				DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V						.000015 Amp	4.9 mm
M93C86-MN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	1KX16	1K	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	16384 bit	4.5 V			e0			.000015 Amp	4.9 mm
M93C86-MN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	1KX16	1K	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	16384 bit	4.5 V			e0			.000015 Amp	4.9 mm
M24C01-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	OPEN-DRAIN	128X8	128	-40 Cel		TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e0			.000001 Amp	9.27 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.