SQUARE EEPROM 142

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
XC18V256PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3		2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ		Flash Memories	10	1.27 mm	85 Cel			32KX8	32K	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	3.6 V	4.572 mm	10000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified			262144 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V256VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	10	.8 mm	70 Cel			32KX8	32K	0 Cel	TIN LEAD			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			262144 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V256VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	10	.8 mm	85 Cel			32KX8	32K	-40 Cel	TIN LEAD			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			262144 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V512PC20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3		2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ		Flash Memories	20	1.27 mm	85 Cel			64KX8	64K	-40 Cel	TIN LEAD			QUAD			S-PQCC-J20	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified			524288 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V512PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3		2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ		Flash Memories	10	1.27 mm	85 Cel			64KX8	64K	-40 Cel	TIN LEAD			QUAD			S-PQCC-J20	3	3.6 V	4.572 mm	10000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified			524288 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V512VQ44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	20	.8 mm	85 Cel			64KX8	64K	-40 Cel	TIN LEAD			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			524288 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V512VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	10	.8 mm	85 Cel			64KX8	64K	-40 Cel	TIN LEAD			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			524288 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC17V01PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	1048576 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ		OTP ROMs		1.27 mm	70 Cel		3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			1048576 bit	3 V		e0	30	225		.001 Amp	8.9662 mm
XC17V02PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ		OTP ROMs		1.27 mm	70 Cel		3-STATE	2MX1	2M	0 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			2097152 bit	3 V		e0	30	225		.001 Amp	8.9662 mm
XC17V02PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ		OTP ROMs		1.27 mm	85 Cel		3-STATE	2MX1	2M	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			2097152 bit	3 V		e0	30	225		.001 Amp	8.9662 mm
XC17V02VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3.3		3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		OTP ROMs		.8 mm	70 Cel		3-STATE	2MX1	2M	0 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm		15 MHz	10 mm	Not Qualified			2097152 bit	3 V		e0	30	240		.001 Amp	10 mm
XC17V02VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3.3		3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		OTP ROMs		.8 mm	85 Cel		3-STATE	2MX1	2M	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm		15 MHz	10 mm	Not Qualified			2097152 bit	3 V		e0	30	240		.001 Amp	10 mm
XC17V04PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ		OTP ROMs		1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			4194304 bit	3 V		e0	30	225		.001 Amp	8.9662 mm
XC17V04PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ		OTP ROMs		1.27 mm	85 Cel		3-STATE	4MX1	4M	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			4194304 bit	3 V		e0	30	225		.001 Amp	8.9662 mm
XC17V04PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J44	3	3.6 V	4.57 mm		15 MHz	16.5862 mm	Not Qualified			4194304 bit	3 V		e0	30	225		.001 Amp	16.5862 mm
XC17V04PC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	85 Cel		3-STATE	4MX1	4M	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J44	3	3.6 V	4.57 mm		15 MHz	16.5862 mm	Not Qualified			4194304 bit	3 V		e0	30	225		.001 Amp	16.5862 mm
XC17V04VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3		3.3	1	FLATPACK, THIN PROFILE	QFP44,.47SQ,32		OTP ROMs		.8 mm	70 Cel		3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm		15 MHz	10 mm	Not Qualified			4194304 bit	3 V		e0	30	240		.001 Amp	10 mm
XC17V04VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3		3.3	1	FLATPACK, THIN PROFILE	QFP44,.47SQ,32		OTP ROMs		.8 mm	85 Cel		3-STATE	4MX1	4M	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm		15 MHz	10 mm	Not Qualified			4194304 bit	3 V		e0	30	240		.001 Amp	10 mm
XC17V08PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	1048576 words	COMMON	3.3		3.3	8	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	70 Cel		3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J44	3	3.6 V	4.57 mm		20 MHz	16.5862 mm	Not Qualified			8388608 bit	3 V		e0	30	225		.001 Amp	16.5862 mm
XC17V08PC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	1048576 words	COMMON	3.3		3.3	8	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J44	3	3.6 V	4.57 mm		20 MHz	16.5862 mm	Not Qualified			8388608 bit	3 V		e0	30	225		.001 Amp	16.5862 mm
XC17V08VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	1048576 words	COMMON	3.3		3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		OTP ROMs		.8 mm	70 Cel		3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm		20 MHz	10 mm	Not Qualified			8388608 bit	3 V		e0	30	240		.001 Amp	10 mm
XC17V08VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	1048576 words	COMMON	3.3		3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		OTP ROMs		.8 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm		20 MHz	10 mm	Not Qualified			8388608 bit	3 V		e0	30	240		.001 Amp	10 mm
XC17V16PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3		3.3	8	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J44	3	3.6 V	4.57 mm		20 MHz	16.5862 mm	Not Qualified			16777216 bit	3 V		e0	30	225		.001 Amp	16.5862 mm
XC17V16PC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3		3.3	8	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	85 Cel		3-STATE	2MX8	2M	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J44	3	3.6 V	4.57 mm		20 MHz	16.5862 mm	Not Qualified			16777216 bit	3 V		e0	30	225		.001 Amp	16.5862 mm
XC17V16VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3		3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		OTP ROMs		.8 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm		20 MHz	10 mm	Not Qualified			16777216 bit	3 V		e0	30	240		.001 Amp	10 mm
XC17V16VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3		3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		OTP ROMs		.8 mm	85 Cel		3-STATE	2MX8	2M	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm		20 MHz	10 mm	Not Qualified			16777216 bit	3 V		e0	30	240		.001 Amp	10 mm
XC17S200AVQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3		3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		OTP ROMs		.8 mm	70 Cel		3-STATE	1335840X1	1335840	0 Cel	TIN LEAD			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified			1335840 bit	3 V		e0				.001 Amp	10 mm
M24128S-FCU6T/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			16KX8	16K	-40 Cel				BOTTOM			S-PBGA-B4		5.5 V	.3 mm		1 MHz	.833 mm		5 ms	I2C	131072 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			.833 mm
25AA320A-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words		5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		3-STATE	4KX8	4K	-40 Cel	Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	32768 bit	4.5 V	OPERATES WITH 1.8V MIN @ 3 MHZ	e3	40	260		.000005 Amp	3 mm		5
M24C32S-FCU6T/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			4KX8	4K	-40 Cel				BOTTOM			S-PBGA-B4		5.5 V	.3 mm		1 MHz	.833 mm		5 ms	I2C	32768 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			.833 mm
M24C64S-FCU6T/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			8KX8	8K	-40 Cel				BOTTOM			S-PBGA-B4		5.5 V	.3 mm		1 MHz	.833 mm		5 ms	I2C	65536 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			.833 mm
PCA24S08DP,118	NXP Semiconductors	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	1024 words				3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	10	.65 mm	85 Cel			1KX8	1K	-40 Cel	SILVER	10101MMR		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	1	3.6 V	1.1 mm	100000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified		I2C	8192 bit	2.5 V		e4				.000015 Amp	3 mm
11AA020-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words		5	NO	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel	MATTE TIN		NO	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	1-WIRE	2048 bit	1.8 V		e3	40	260		.000005 Amp	3 mm
11AA020T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words		5	NO	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel	MATTE TIN		NO	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	1-WIRE	2048 bit	1.8 V		e3	40	260		.000005 Amp	3 mm
CAT24C64ZI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words		5		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.65 mm	85 Cel			8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V	100 YEAR DATA RETENTION	e4				.000003 Amp	3 mm
XQ18V04VQ44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	40k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	50 mA	524288 words		3.3		2.5/3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	10	.8 mm	125 Cel			512KX8	512K	-55 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified			4194304 bit	3 V		e0	30	240	NOR TYPE	.02 Amp	10 mm
24LC16B-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words		5		3/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	125 Cel			2KX8	2K	-40 Cel	MATTE TIN	1010MMMR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V		e3		260		.000005 Amp	3 mm		5
24LC01BT-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		5		3/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	125 Cel			128X8	128	-40 Cel	Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e3	40	260		.000005 Amp	3 mm		5
24AA128-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V		e3		260		.000005 Amp	3 mm		2.5
93AA46C-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		2.5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	8	EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel	MATTE TIN		YES	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	1.8 V		e3		260		.000001 Amp	3 mm
93LC66C-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		3	YES	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	8	EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	256X16	256	-40 Cel	Matte Tin (Sn)		YES	DUAL		SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	2.5 V	ALSO CONFIGURABLE AS 512 X 8	e3	40	260		.000001 Amp	3 mm
24AA024-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e3	40	260		.000001 Amp	3 mm		2.5
24AA256T-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words		2.5		1.8/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	125 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V		e3	40	260		.000005 Amp	3 mm		2.5
M24512-WMW6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words		5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel			64KX8	64K	-40 Cel	MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	.4 MHz	5.62 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V		e3				.000002 Amp	5.62 mm
M24512-WMW6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words		5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel			64KX8	64K	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	.4 MHz	5.62 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V		e3	30	260		.000002 Amp	5.62 mm
M95256-WMW6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words		5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel			32KX8	32K	-40 Cel	Matte Tin (Sn) - annealed			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	5 MHz	5.62 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V		e3	30	260		.000005 Amp	5.62 mm
M95256-WMW6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words		5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel			32KX8	32K	-40 Cel	Matte Tin (Sn) - annealed			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	5 MHz	5.62 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V		e3	30	260		.000005 Amp	5.62 mm
25AA160B-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	6 mA	2048 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel			2KX8	2K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V		e3				.000001 Amp	3 mm		2.5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.