COMMERCIAL EEPROM 119

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
XC1701PD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	20 mA	1048576 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	1MX1	1M		Tin/Lead (Sn85Pb15)		DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			1048576 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	9.3599 mm
XC17512LPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	524288 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	512KX1	512K		Tin/Lead (Sn85Pb15)		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	9.3599 mm
XC1701SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	20 mA	1048576 words	COMMON	5		5	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	1MX1	1M		Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G20	3	5.25 V	2.6416 mm		15 MHz	7.5184 mm	Not Qualified			1048576 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	12.827 mm
XC17512LSO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	524288 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	512KX1	512K		Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G20	3	3.6 V	2.6416 mm		15 MHz	7.5184 mm	Not Qualified			524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	12.827 mm
XC1701PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	20 mA	1048576 words	COMMON	5		5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	1MX1	1M		Tin/Lead (Sn85Pb15)		QUAD		S-PQCC-J20	3	5.25 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			1048576 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	8.9662 mm
XC17512LPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	5 mA	524288 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	512KX1	512K		Tin/Lead (Sn85Pb15)		QUAD		S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	8.9662 mm
XC1702LPC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	10 mA	2097152 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	2MX1	2M		Tin/Lead (Sn85Pb15)		QUAD		S-PQCC-J44	3	3.6 V	4.572 mm		15 MHz	16.5862 mm	Not Qualified			2097152 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	16.5862 mm
XC1702LVQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	2097152 words	COMMON	3.3		3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs		.8 mm	70 Cel	3-STATE	2MX1	2M		Tin/Lead (Sn85Pb15)		QUAD		S-PQFP-G44	3	3.6 V	1.2 mm		15 MHz	10 mm	Not Qualified			2097152 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	240		.00005 Amp	10 mm
AT28BV256-20SC	Atmel	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel		32KX8	32K	NO	TIN LEAD		DUAL		R-PDSO-G28	2	3.6 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		262144 bit	2.7 V	AUTOMATIC WRITE	64	e0		240		.00002 Amp	17.9 mm	200 ns	3	YES
FM93CS56LN	Fairchild Semiconductor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	128 words		3.3		3/5	16	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	70 Cel		128X16	128		TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles	.25 MHz	7.62 mm	Not Qualified	15 ms	MICROWIRE	2048 bit	2.7 V			e0				.00001 Amp	9.817 mm
XC18V256PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3		2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	70 Cel		32KX8	32K		TIN LEAD		QUAD		S-PQCC-J20	3	3.6 V	4.572 mm	10000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified			262144 bit	3 V			e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V256SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3		2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	70 Cel		32KX8	32K		TIN LEAD		DUAL		R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	33 MHz	7.5 mm	Not Qualified			262144 bit	3 V			e0	30	225	NOR TYPE	.01 Amp	12.8 mm	15 ns
XC18V256VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	70 Cel		32KX8	32K		TIN LEAD		QUAD		S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			262144 bit	3 V			e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC17V01PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	15 mA	1048576 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	1MX1	1M		Tin/Lead (Sn85Pb15)		QUAD		S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			1048576 bit	3 V			e0	30	225		.001 Amp	8.9662 mm
XC17V01SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	1MX1	1M		Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G20	3	3.6 V	2.65 mm		15 MHz	7.5 mm	Not Qualified			1048576 bit	3 V			e0	30	225		.001 Amp	12.8 mm
XC17V01VO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	1MX1	1M		Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		15 MHz	3.9 mm	Not Qualified			1048576 bit	3 V			e0	30	225		.001 Amp	4.9 mm
XC17V02PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	2MX1	2M		Tin/Lead (Sn85Pb15)		QUAD		S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			2097152 bit	3 V			e0	30	225		.001 Amp	8.9662 mm
XC17V02VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3.3		3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs		.8 mm	70 Cel	3-STATE	2MX1	2M		Tin/Lead (Sn85Pb15)		QUAD		S-PQFP-G44	3	3.6 V	1.2 mm		15 MHz	10 mm	Not Qualified			2097152 bit	3 V			e0	30	240		.001 Amp	10 mm
XC17V04PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	4MX1	4M		Tin/Lead (Sn85Pb15)		QUAD		S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			4194304 bit	3 V			e0	30	225		.001 Amp	8.9662 mm
XC17V04PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	4MX1	4M		Tin/Lead (Sn85Pb15)		QUAD		S-PQCC-J44	3	3.6 V	4.57 mm		15 MHz	16.5862 mm	Not Qualified			4194304 bit	3 V			e0	30	225		.001 Amp	16.5862 mm
XC17V04VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3		3.3	1	FLATPACK, THIN PROFILE	QFP44,.47SQ,32	OTP ROMs		.8 mm	70 Cel	3-STATE	4MX1	4M		Tin/Lead (Sn85Pb15)		QUAD		S-PQFP-G44	3	3.6 V	1.2 mm		15 MHz	10 mm	Not Qualified			4194304 bit	3 V			e0	30	240		.001 Amp	10 mm
XC17V08PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	1048576 words	COMMON	3.3		3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	1MX8	1M		Tin/Lead (Sn85Pb15)		QUAD		S-PQCC-J44	3	3.6 V	4.57 mm		20 MHz	16.5862 mm	Not Qualified			8388608 bit	3 V			e0	30	225		.001 Amp	16.5862 mm
XC17V08VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	1048576 words	COMMON	3.3		3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs		.8 mm	70 Cel	3-STATE	1MX8	1M		Tin/Lead (Sn85Pb15)		QUAD		S-PQFP-G44	3	3.6 V	1.2 mm		20 MHz	10 mm	Not Qualified			8388608 bit	3 V			e0	30	240		.001 Amp	10 mm
XC17V16PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3		3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	2MX8	2M		Tin/Lead (Sn85Pb15)		QUAD		S-PQCC-J44	3	3.6 V	4.57 mm		20 MHz	16.5862 mm	Not Qualified			16777216 bit	3 V			e0	30	225		.001 Amp	16.5862 mm
XC17V16VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3		3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs		.8 mm	70 Cel	3-STATE	2MX8	2M		Tin/Lead (Sn85Pb15)		QUAD		S-PQFP-G44	3	3.6 V	1.2 mm		20 MHz	10 mm	Not Qualified			16777216 bit	3 V			e0	30	240		.001 Amp	10 mm
XC17S100APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	781216X1	781216		Tin/Lead (Sn85Pb15)		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			781216 bit	3 V			e0	30	225		.001 Amp	9.3599 mm
XC17S100ASO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	781216X1	781216		Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified			781216 bit	3 V			e0	30	225		.001 Amp	12.8 mm
XC17S100AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	781216X1	781216		Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			781216 bit	3 V			e0	30	225		.001 Amp	4.9 mm
XC17S150APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	1040096 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	1040096X1	1040096		Tin/Lead (Sn85Pb15)		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			1040096 bit	3 V			e0	30	225		.00005 Amp	9.3599 mm
XC17S150ASO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	1040096 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	1040096X1	1040096		Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified			1040096 bit	3 V			e0	30	225		.00005 Amp	12.8 mm
XC17S150AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	1040096 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	1040096X1	1040096		Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			1040096 bit	3 V			e0	30	225		.00005 Amp	4.9 mm
XC17S15APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	197696 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	197696X1	197696		Tin/Lead (Sn85Pb15)		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			197696 bit	3 V			e0	30	225		.00005 Amp	9.3599 mm
XC17S15ASO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	197696 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	197696X1	197696		Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified			197696 bit	3 V			e0	30	225		.00005 Amp	12.8 mm
XC17S15AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	197696 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	197696X1	197696		Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			197696 bit	3 V			e0	30	225		.00005 Amp	4.9 mm
XC17S200APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	1335840X1	1335840		Tin/Lead (Sn85Pb15)		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			1335840 bit	3 V			e0	30	225		.001 Amp	9.3599 mm
XC17S200AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	1335840X1	1335840		Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			1335840 bit	3 V			e0	30	225		.001 Amp	4.9 mm
XC17S200AVQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3		3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs		.8 mm	70 Cel	3-STATE	1335840X1	1335840		TIN LEAD		QUAD		S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified			1335840 bit	3 V			e0				.001 Amp	10 mm
XC17S30APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	336768 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	336768X1	336768		Tin/Lead (Sn85Pb15)		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			336768 bit	3 V			e0	30	225		.00005 Amp	9.3599 mm
XC17S30ASO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	336768 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	336768X1	336768		Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified			336768 bit	3 V			e0	30	225		.00005 Amp	12.8 mm
XC17S30AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	336768 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	336768X1	336768		Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			336768 bit	3 V			e0	30	225		.00005 Amp	4.9 mm
XC17S50APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	559200X1	559200		Tin/Lead (Sn85Pb15)		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			559200 bit	3 V			e0	30	225		.001 Amp	9.3599 mm
XC17S50ASO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	559200X1	559200		Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified			559200 bit	3 V			e0	30	225		.001 Amp	12.8 mm
XC17S50AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	559200X1	559200		Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			559200 bit	3 V			e0	30	225		.001 Amp	4.9 mm
CAT28C256L15	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	100	2.54 mm	70 Cel		32KX8	32K	NO	TIN		DUAL		R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3				.00015 Amp	36.695 mm	150 ns	5	YES
XCCACE128-I	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	50		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS		8388608 words		3.3			16	MICROELECTRONIC ASSEMBLY					60 Cel		8MX16	8M				UNSPECIFIED		R-XXMA-X50		3.6 V	3.3 mm		33 MHz	36 mm	Not Qualified			134217728 bit	3 V								42.8 mm
M34E02-FMB1TG	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5		1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	70 Cel		256X8	256		NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	1	3.6 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V			e4				.000001 Amp	3 mm
CAT28C64BL-12	Catalyst Semiconductor	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		8KX8	8K	NO	MATTE TIN		DUAL		R-PDIP-T28		5.5 V	5.08 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3				.0001 Amp	36.695 mm	120 ns	5	YES
XC17S100AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	781216X1	781216		Matte Tin (Sn)		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			781216 bit	3 V			e3	30	260		.001 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.