INDUSTRIAL EEPROM 598

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
24LC512T-I/ST14	Microchip Technology	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	4.5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25		EEPROMs	200	.65 mm	85 Cel			64KX8	64K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G14	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V		e3	40	260		.000001 Amp	5 mm
24LC01B-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel	NO		128X8	128	-40 Cel	Matte Tin (Sn)	1010XXXR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e3	40	260		.000005 Amp	4.9 mm
93AA46C-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	2.5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	8	EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel	MATTE TIN		YES	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	1.8 V		e3		260		.000001 Amp	3 mm
93AA46C-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words	2.5		2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel	MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	1.8 V		e3				.000001 Amp	9.27 mm
93AA46CX-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	2.5		2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel	MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	1.8 V		e3	30	260		.000001 Amp	4.9 mm
93AA46CXT-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	2.5		2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel	MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	1.8 V		e3	30	260		.000001 Amp	4.9 mm
93LC66C-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3	YES	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	8	EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	256X16	256	-40 Cel	Matte Tin (Sn)		YES	DUAL		SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	2.5 V	ALSO CONFIGURABLE AS 512 X 8	e3	40	260		.000001 Amp	3 mm
93LC66CT-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3	YES	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	256X16	256	-40 Cel	MATTE TIN		YES	DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	2.5 V	ALSO CONFIGURABLE AS 512 X 8	e3	40	260		.000001 Amp	4.4 mm
93LC86C-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	YES	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	1KX16	1K	-40 Cel	MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	16384 bit	2.5 V		e3	40	260		.000001 Amp	4.4 mm
XCF01SVO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words	3.3		1.8/3.3,3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		Flash Memories	20	.65 mm	85 Cel			1MX1	1M	-40 Cel	TIN LEAD			DUAL			R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified			1048576 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	225	NOR TYPE	.001 Amp	6.5024 mm
XCF02SVO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	2097152 words	3.3		1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		Flash Memories	20	.65 mm	85 Cel			2MX1	2M	-40 Cel	TIN LEAD			DUAL			R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified			2097152 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	225	NOR TYPE	.001 Amp	6.5024 mm
XCF04SVO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	4194304 words	3.3		1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		Flash Memories		.65 mm	85 Cel			4MX1	4M	-40 Cel	TIN LEAD			DUAL			R-PDSO-G20	3	3.6 V	1.19 mm		33 MHz	4.4 mm	Not Qualified			4194304 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	240	NOR TYPE	.001 Amp	6.5024 mm
24AA024-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e3	40	260		.000001 Amp	3 mm	2.5
XCF08PFS48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	40 mA	8388608 words	1.8		1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	20	.8 mm	85 Cel			8MX1	8M	-40 Cel	TIN LEAD			BOTTOM			R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	8 mm	Not Qualified			8388608 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	240	NOR TYPE	.001 Amp	9 mm
XCF08PVO48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	40 mA	8388608 words	1.8		1.5/3.3,1.8	1	SMALL OUTLINE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			8MX1	8M	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	12 mm	Not Qualified			8388608 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	225	NOR TYPE	.001 Amp	18.45 mm
XCF16PFS48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	40 mA	16777216 words	1.8		1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	20	.8 mm	85 Cel			16MX1	16M	-40 Cel	TIN LEAD			BOTTOM			R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles		8 mm	Not Qualified			16777216 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	240	NOR TYPE		9 mm
XCF32PFS48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	40 mA	33554432 words	1.8		1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	20	.8 mm	85 Cel			32MX1	32M	-40 Cel	TIN LEAD			BOTTOM			R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles		8 mm	Not Qualified			33554432 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	240	NOR TYPE		9 mm
M24512-WMW6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel			64KX8	64K	-40 Cel	MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	.4 MHz	5.62 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V		e3				.000002 Amp	5.62 mm
M24512-WMW6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel			64KX8	64K	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	.4 MHz	5.62 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V		e3	30	260		.000002 Amp	5.62 mm
M24C64-RDW6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			8KX8	8K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V		e4	NOT SPECIFIED	NOT SPECIFIED		.000001 Amp	4.4 mm
M24C64-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	8192 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			8KX8	8K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e3	NOT SPECIFIED	NOT SPECIFIED		.000002 Amp	9.27 mm
M95256-RMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V		e4				.000003 Amp	4.9 mm
M95256-WMW6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel			32KX8	32K	-40 Cel	Matte Tin (Sn) - annealed			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	5 MHz	5.62 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V		e3	30	260		.000005 Amp	5.62 mm
M95256-WMW6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel			32KX8	32K	-40 Cel	Matte Tin (Sn) - annealed			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	5 MHz	5.62 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V		e3	30	260		.000005 Amp	5.62 mm
25AA080BT-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel			1KX8	1K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	8192 bit	1.8 V		e3	30	260		.000001 Amp	4.9 mm	2.5
25AA160AT-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	6 mA	2048 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel			2KX8	2K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V		e3	30	260		.000001 Amp	4.9 mm	2.5
25AA160B-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	6 mA	2048 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel			2KX8	2K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V		e3				.000001 Amp	3 mm	2.5
25LC160A-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	6 mA	2048 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			2KX8	2K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	16384 bit	2.5 V		e3				.000001 Amp	9.271 mm	5
25LC256T-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	6 mA	32768 words	4.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	85 Cel	NO	3-STATE	32KX8	32K	-40 Cel	Matte Tin (Sn) - annealed			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	10 MHz	5 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V		e3	40	260		.000001 Amp	6 mm	2.5
M34C02-LDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5		2.5/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V		e4				.0000005 Amp	4.4 mm
M34C02-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words	2.2		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V		e4				.0000005 Amp	4.4 mm
M93S56-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5		3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V		e3				.000005 Amp	9.27 mm
M93C46-MN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words	5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel			64X16	64	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V		e4				.00005 Amp	4.9 mm
M93C46-MN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words	5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel			64X16	64	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V		e4	30	260		.00005 Amp	4.9 mm
M93C46-RDS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	8	EEPROMs	40	.65 mm	85 Cel			64X16	64	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	1.8 V		e4				.000002 Amp	3 mm
M93C46-RDS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	8	EEPROMs	40	.65 mm	85 Cel			64X16	64	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	1.8 V		e4				.000002 Amp	3 mm
M93C46-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	64 words	5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel			64X16	64	-40 Cel	MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V		e3				.00001 Amp	9.27 mm
M93C56-MN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel			128X16	128	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	4.5 V		e4				.000015 Amp	4.9 mm
M93C56-MN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel			128X16	128	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	4.5 V		e4				.000015 Amp	4.9 mm
M93C56-RDS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	8	EEPROMs	40	.65 mm	85 Cel			128X16	128	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V		e4				.000002 Amp	3 mm
M93C56-RDS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	8	EEPROMs	40	.65 mm	85 Cel			128X16	128	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V		e4				.000002 Amp	3 mm
M93C56-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	40	.65 mm	85 Cel			128X16	128	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V		e4				.000002 Amp	4.4 mm
M93C56-RMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5		2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel			128X16	128	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V		e4				.000002 Amp	4.9 mm
M93C56-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V		e3				.000005 Amp	9.27 mm
M93C66-MN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel			256X16	256	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V		e4				.00005 Amp	4.9 mm
M93C66-MN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel			256X16	256	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V		e4				.00005 Amp	4.9 mm
M93C76-MN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	512 words	5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel			512X16	512	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	8192 bit	4.5 V		e4				.00005 Amp	4.9 mm
M93C76-MN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	512 words	5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel			512X16	512	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	8192 bit	4.5 V		e4				.00005 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.