MILITARY EEPROM 11

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
25LC512-M/SN	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5			8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	125 Cel		64KX8	64K	-55 Cel		MATTE TIN		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		5 ms	SPI	524288 bit	2.5 V			e3	30	260		.00002 Amp	4.9 mm		5
25LC512T-M/SN	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5			8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	125 Cel		64KX8	64K	-55 Cel		MATTE TIN		DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		5 ms	SPI	524288 bit	2.5 V			e3				.00002 Amp	4.9 mm		5
24LC16B-M/SN	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		3/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	125 Cel	OPEN-DRAIN	2KX8	2K	-55 Cel		Matte Tin (Sn)	1010MMMR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e3	30	260		.000001 Amp	4.9 mm		5
24LC16BT-M/SN	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		3/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	125 Cel		2KX8	2K	-55 Cel		Matte Tin (Sn)	1010MMMR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e3	30	260		.000005 Amp	4.9 mm		5
XQ18V04VQ44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	40k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	50 mA	524288 words	3.3		2.5/3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	125 Cel		512KX8	512K	-55 Cel		Tin/Lead (Sn85Pb15)		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified			4194304 bit	3 V			e0	30	240	NOR TYPE	.02 Amp	10 mm
25LC640A-M/SN	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	125 Cel		8KX8	8K	-55 Cel		Matte Tin (Sn)		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	4.5 V	2.5V TO 4.5V @ 5MHz		e3	30	260		.000005 Amp	4.9 mm		5
XQF32PVOG48M	Xilinx	CONFIGURATION MEMORY	MILITARY	48	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	40 mA	33554432 words	1.8		1.8/3.3,1.8	1	SMALL OUTLINE	TSSOP48,.8,20	Flash Memories	20	.5 mm	125 Cel		32MX1	32M	-55 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G48	3	2 V		20000 Write/Erase Cycles			Not Qualified			33554432 bit	1.65 V			e4	30	260	NOR TYPE			30 ns
AT28C256-15DM/883-815	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	125 Cel		32KX8	32K	-55 Cel		TIN LEAD		DUAL			R-GDIP-T28		5.5 V	5.72 mm			15.24 mm		10 ms		262144 bit	4.5 V			e0					37.215 mm	150 ns	5
25LC512-E/SN16KVAO	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5			8	SMALL OUTLINE	SOP8,.25		200	1.27 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm		5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 10MHz						.00001 Amp	4.9 mm		5
25LC512T-E/SN16KVAO	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5			8	SMALL OUTLINE	SOP8,.25		200	1.27 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm		5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 10MHz						.00001 Amp	4.9 mm		5
AT28C256F-15DM/883-815	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR		CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES		8	IN-LINE	DIP28,.6		10	2.54 mm	125 Cel		32KX8	32K	-55 Cel	NO			DUAL	1		R-GDIP-T28		5.5 V	5.72 mm	10000 Write/Erase Cycles		15.24 mm		3 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64					.0003 Amp	37.215 mm	150 ns	5	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.