Atmel EEPROM 32

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT28C16-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	1 ms		16384 bit	4.5 V	AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS		e0		225	.0001 Amp	13.97 mm	200 ns	5	YES
AT28C16-20JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	45 mA	2048 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	1 ms		16384 bit	4.5 V	AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS		e0		225	.0001 Amp	13.97 mm	200 ns	5	YES
AT28C16-20SC	Atmel	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	10	1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD		DUAL		R-PDSO-G24		5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	1 ms		16384 bit	4.5 V	AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS		e0			.0001 Amp	15.4 mm	200 ns	5	YES
AT28LV256-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		QUAD		R-PQCC-J32	2	3.465 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	3.135 V	AUTOMATIC WRITE	64	e0		225	.00002 Amp	13.97 mm	200 ns	3	YES
AT28LV256-25PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	Tin/Lead (Sn/Pb)		DUAL		R-PDIP-T28		3.465 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	3.135 V	AUTOMATIC WRITE	64	e0			.00002 Amp	36.95 mm	250 ns	3	YES
AT28LV256-25PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	Tin/Lead (Sn/Pb)		DUAL		R-PDIP-T28		3.465 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	3.135 V	AUTOMATIC WRITE	64	e0			.00005 Amp	36.95 mm	250 ns	3	YES
AT24C64-10PC	Atmel	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	OPEN-DRAIN	8KX8	8K	0 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V	DATA RETENTION: 100 YEARS		e0			.000035 Amp	9.59 mm
AT28C256-15PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	10	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	Tin/Lead (Sn/Pb)		DUAL		R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0	30	225	.0002 Amp	37.0205 mm	150 ns	5	YES
AT28C256-15PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	Tin/Lead (Sn/Pb)		DUAL		R-PDIP-T28		5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0	30	240	.0002 Amp	37.0205 mm	150 ns	5	YES
AT28C256F-15PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL		R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	3 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0002 Amp	37.0205 mm	150 ns	5	YES
AT28HC256-12PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		DUAL		R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	37.0205 mm	120 ns	5	YES
AT28HC256-70PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL		R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0				37.0205 mm	70 ns	5	YES
AT28HC256E-12PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL		R-PDIP-T28	1	5.5 V	4.826 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	37.0205 mm	120 ns	5	YES
AT25010-10PC	Atmel	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	6 mA	128 words	5		5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	3-STATE	128X8	128	0 Cel		TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	4.5 V	4-WIRE SERIAL INTERFACE		e0			.0001 Amp	9.59 mm
AT28C256E-15SC	Atmel	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		DUAL		R-PDSO-G28	2	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		240	.0002 Amp	17.9 mm	150 ns	5	YES
AT28C256-15JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225	.0002 Amp	13.97 mm	150 ns	5	YES
AT28C256-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225	.0002 Amp	13.97 mm	200 ns	5	YES
AT28HC256-12JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225	.0003 Amp	13.97 mm	120 ns	5	YES
AT28C040-20LI	Atmel	EEPROM	INDUSTRIAL	44	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	YES	5	8	CHIP CARRIER	LCC44,.65SQ	EEPROMs		1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	NO	TIN LEAD		QUAD		S-CQCC-N44	1	5.5 V	2.74 mm			16.55 mm	Not Qualified	10 ms		4194304 bit	4.5 V	AUTOMATIC WRITE	256	e0			.003 Amp	16.55 mm	200 ns	5	YES
AT24C02N-10SI	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	4.5 V	2-WIRE SERIAL INTERFACE		e0			.000018 Amp	4.89 mm
AT24C08N-10SI	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel		Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	8192 bit	4.5 V	2-WIRE SERIAL INTERFACE		e0	30	240	.000018 Amp	4.89 mm
AT17LV256-10PC	Atmel	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	262144 words	3.3		3.3	1	IN-LINE	DIP8,.3	EEPROMs		2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		TIN LEAD		DUAL		R-PDIP-T8	1	3.6 V	5.334 mm		10 MHz	7.62 mm	Not Qualified			262144 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e0			.00005 Amp	9.271 mm	75 ns
AT17LV512-10JC	Atmel	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	524288 words	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	EEPROMs		1.27 mm	70 Cel		512KX1	512K	0 Cel		TIN LEAD		QUAD	HARDWARE	S-PQCC-J20	2	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			524288 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e0		225		8.9662 mm
AT17C256-10PI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	5		5	1	IN-LINE	DIP8,.3	EEPROMs		2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		TIN LEAD		DUAL		R-PDIP-T8		5.5 V	4.318 mm		12.5 MHz	7.62 mm	Not Qualified			262144 bit	4.5 V			e0			.00015 Amp	9.398 mm	55 ns
AT17C128-10SI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	5		5	1	SMALL OUTLINE	SOP20,.4	EEPROMs		1.27 mm	85 Cel	3-STATE	128KX1	128K	-40 Cel		TIN LEAD		DUAL		R-PDSO-G20		5.5 V	2.65 mm			7.5 mm	Not Qualified			131072 bit	4.5 V			e0			.002 Amp	12.8 mm	55 ns
AT28C010E-15TI	Atmel	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	EEPROMs		.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	NO	TIN LEAD		DUAL		R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		1048576 bit	4.5 V	AUTOMATIC WRITE	128	e0		240	.0002 Amp	18.4 mm	150 ns	5	YES
AT28BV256-20SC	Atmel	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN LEAD		DUAL		R-PDSO-G28	2	3.6 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		262144 bit	2.7 V	AUTOMATIC WRITE	64	e0		240	.00002 Amp	17.9 mm	200 ns	3	YES
AT28BV256-20SI	Atmel	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs	10	1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G28	2	3.6 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		262144 bit	2.7 V	AUTOMATIC WRITE	64	e0		240	.00005 Amp	17.9 mm	200 ns	3	YES
AT28BV256-20TI	Atmel	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL		R-PDSO-G28	3	3.6 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		262144 bit	2.7 V	AUTOMATIC WRITE	64	e0		240	.00005 Amp	11.8 mm	200 ns	3	YES
AT18F010-30XU	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs		.65 mm	85 Cel		1MX1	1M	-40 Cel				DUAL		R-PDSO-G20		3.6 V	1.2 mm	100000 Write/Erase Cycles	33 MHz	4.4 mm	Not Qualified			1048576 bit	3 V						.001 Amp	6.5 mm
AT17LV010A-10PI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	1048576 words	3.3		3.3/5	1	IN-LINE	DIP8,.3	EEPROMs		2.54 mm	85 Cel		1MX1	1M	-40 Cel		TIN LEAD		DUAL	HARDWARE	R-PDIP-T8	1	3.6 V	5.334 mm		10 MHz	7.62 mm	Not Qualified			1048576 bit	3 V	ALSO OPERATES AT 5V SUPPLY		e0				9.271 mm
AT17LV010-10PI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	1048576 words	3.3		3.3/5	1	IN-LINE	DIP8,.3	EEPROMs	90	2.54 mm	85 Cel		1MX1	1M	-40 Cel		TIN LEAD		DUAL	HARDWARE	R-PDIP-T8	1	3.6 V	5.334 mm	100000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified			1048576 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e0			.0001 Amp	9.271 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.