Onsemi EEPROM 66

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)	Data Polling
CAT34C02HU4IGT4A	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	16 words	5	1.8/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel	NO		16X16	16	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	YES	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	256 bit	1.7 V	100 YEAR DATA RETENTION	16	e4	30	260	.000001 Amp	3 mm
CAT24C64ZI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	5	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.65 mm	85 Cel			8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V	100 YEAR DATA RETENTION		e4			.000003 Amp	3 mm
CAT64LC40YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words	3.3		8	SMALL OUTLINE, VERY THIN PROFILE					1.2 mm	85 Cel			32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	6 V	.65 mm			3 mm	Not Qualified		SPI	262144 bit	2.5 V			e4	30	260		4.4 mm
NV24C32DTVLT3G	Onsemi	EEPROM	AUTOMOTIVE	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	1 mA	4096 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSOP8,.25				.65 mm	125 Cel	NO		128X32	32K	-40 Cel	NO	NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		4 ms	I2C	32768 bit	1.7 V		32	e4	30	260	.000002 Amp	4.4 mm		YES
NV25128DWHFT3G	Onsemi	EEPROM																															Nickel/Palladium/Gold (Ni/Pd/Au)							1								SPI					e4	30	260
CAT25AM02C8ATR	Onsemi	EEPROM	COMMERCIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		262144 words	2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						70 Cel			256KX16	256K	0 Cel		TIN SILVER			BOTTOM			R-PBGA-B8		3.6 V	.37 mm		5 MHz	2.04 mm		10 ms	SPI	4194304 bit	1.6 V			e2				3.12 mm
CAT25AM02C8CTR	Onsemi	EEPROM	COMMERCIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		262144 words	2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						70 Cel			256KX16	256K	0 Cel		TIN SILVER			BOTTOM			R-PBGA-B8		3.6 V	.37 mm		5 MHz	2.04 mm		10 ms	SPI	4194304 bit	1.6 V			e2				3.12 mm
CAV24C32C4CTR	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	125 Cel			4KX8	4K	-40 Cel		Tin/Silver (Sn/Ag)			BOTTOM			S-PBGA-B4	1	5.5 V	.35 mm		.4 MHz	.76 mm		5 ms	I2C	32768 bit	2.5 V			e2	NOT SPECIFIED	NOT SPECIFIED		.76 mm
LE2416RDXATDG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2048 words	2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			2KX8	2K	-40 Cel		TIN SILVER COPPER			BOTTOM			R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm		5 ms	I2C	16384 bit	1.7 V			e1	30	260		1.2 mm
LE2464DXATBG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			8KX8	8K	-40 Cel		TIN SILVER COPPER			BOTTOM			R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm		5 ms	I2C	65536 bit	1.7 V			e1	30	260		1.2 mm
CAV25512HU5E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		65536 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8	1	5.5 V	.55 mm		10 MHz	2 mm		5 ms	SPI	524288 bit	2.5 V			e4	30	260		3 mm
NV25M01DWUTG	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		131072 words	2.5		8	SMALL OUTLINE					1.27 mm	105 Cel			128KX8	128K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		5 MHz	3.9 mm		5 ms	SPI	1048576 bit	1.8 V			e4	30	260		4.9 mm
CAT24S64C4ATR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			8KX8	8K	-40 Cel		TIN SILVER COPPER			BOTTOM			S-PBGA-B4	1	5.5 V	.35 mm		1 MHz	.85 mm		5 ms	I2C	65536 bit	1.7 V	LG-MAX, WD-MAX, ALSO AVAILABLE 1.6-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ		e1	30	260		.85 mm
NV34C04MU3VTG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	4096 words	2.5		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			100	.5 mm	125 Cel	NO		4KX1	4K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.55 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		4 ms	I2C	4096 bit	2.2 V	IT ALSO OPERATES AT 1.7-3.6V SUPPLY VOLTAGE AT FREQUENCY 0.1 MHZ AND 0.4 MHZ		e4	30	260	.000001 Amp	3 mm	3.6
NV25320MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		4096 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel			4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8	1	5.5 V	.55 mm		10 MHz	2 mm		5 ms	SPI	32768 bit	2.5 V			e4	30	260		3 mm
CAT24C512YI-G	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	65536 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	85 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	524288 bit	2.5 V	ALSO OPERATES WITH 1.8V MIN AT 4 KHZ		e4	30	260	.000002 Amp	4.4 mm
CAT24M01WI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	3.3		8	SMALL OUTLINE	SOP8,.25	1		100	1.27 mm	85 Cel			128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	SPI	1048576 bit	1.8 V	IT ALSO OPERATES AT 0.4MHZ AT 1.8MIN SUPPLY		e4	30	260	.000002 Amp	4.9 mm	3.3
CAT25M01VI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	2.5		8	SMALL OUTLINE	SOP8,.25	1		100	1.27 mm	85 Cel		3-STATE	128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		5 ms	SPI	1048576 bit	1.8 V			e4	30	260	.000001 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.