ROHM EEPROM 11

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
BR24T02FV-WGE2	ROHM	EEPROM	INDUSTRIAL	8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		1.8/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	SSOP8,.25	EEPROMs	40	.65 mm	85 Cel	256X8	256	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.35 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	1.6 V	SEATED HT-CALCULATED		NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
BR24T256-W	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2.5 mA	32768 words		1.8/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDIP-T8	1	5.5 V	4.21 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	1.6 V	SEATED HT-CALCULATED	e3			.000002 Amp	9.3 mm
BR93H56RFJ-2CE2	ROHM	EEPROM	AUTOMOTIVE	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	4	3/5	16	SMALL OUTLINE, LOW PROFILE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.65 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	4 ms	MICROWIRE	2048 bit	2.5 V	SEATED HT-CALCULATED		NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	4.9 mm
BR24G1M-3A	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	4.5 mA	131072 words		1.8/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	128KX8	128K	-40 Cel		1010DDMR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	3.7 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	1048576 bit	1.7 V	ROHM-S-A0000225889 REF SEATED HTCONSIDER		NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	9.3 mm
BR34E02FVT-WE2	ROHM	EEPROM	INDUSTRIAL	8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5	1.8/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel	256X8	256	-40 Cel	PURE TIN	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.25 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			10	260	.000002 Amp	4.4 mm
BR93C56-WMN6TP	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		3/5	1	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	2KX1	2K	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.9 mm
BR25L160FVT-WE2	ROHM	EEPROM	INDUSTRIAL	8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.5	2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel	2KX8	2K	-40 Cel	TIN COPPER		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.25 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V		e2			.000002 Amp	4.4 mm
BR25L640FJ-WE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	8KX8	8K	-40 Cel	TIN COPPER		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.65 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V		e2			.000002 Amp	4.9 mm
BR24L08F-WE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	1KX8	1K	-40 Cel	TIN COPPER	1010DMMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.78 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V		e2	10	260	.000002 Amp	5 mm
BR24L02-W	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	2/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	256X8	256	-40 Cel	Tin/Copper (Sn/Cu)	1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	3.7 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V		e2	10	260	.000002 Amp	9.3 mm
BR24G02FVT-3AGE2	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel	256X8	256	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm		5 ms	I2C	2048 bit	1.6 V	1.7V AT 1MHZ		NOT SPECIFIED	NOT SPECIFIED		4.4 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.