RECTANGULAR EPROM 59

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C1001-15F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	MATTE TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	150 ns
M27C1001-45XF1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	MATTE TIN	DUAL	R-CDIP-T32	5.25 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	41.885 mm	45 ns
M27C1001-70F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	MATTE TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	70 ns
M27C322-100F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	70 Cel	3-STATE	2MX16	2M	MATTE TIN	DUAL	R-CDIP-T42	5.5 V	5.71 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e3			.0001 Amp	54.635 mm	100 ns
M27V160-100XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	MATTE TIN	DUAL	R-CDIP-T42	3.465 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	3.135 V	CONFIGURABLE AS 1M X 16	e3			.00006 Amp	54.635 mm	100 ns
M27V800-100F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	512KX16	512K	TIN LEAD	DUAL	R-GDIP-T42	3.63 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	2.97 V	CONFIGURABLE AS 512K X 16	e0			.00002 Amp	54.635 mm	100 ns
M27V322-100F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	70 Cel	3-STATE	2MX16	2M	MATTE TIN	DUAL	R-CDIP-T42	3.63 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	2.97 V		e3			.00006 Amp	54.635 mm	100 ns
M27C256B-45XF1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	MATTE TIN	DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3			.0001 Amp	36.92 mm	45 ns	12.75
M27C160-50F1	STMicroelectronics	UVPROM	COMMERCIAL	42	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	MATTE TIN	DUAL	R-CDIP-T42	5.5 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e3			.0001 Amp	54.635 mm	50 ns
M27C64A-10F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	MATTE TIN	DUAL	R-CDIP-T28	5.5 V	5.97 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e3			.0001 Amp	36.92 mm	100 ns	12.5
MD27C64-35	Rochester Electronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5		8	IN-LINE	DIP28,.6				70 Cel	3-STATE	8KX8	8K		DUAL	R-XDIP-T28	5.5 V				65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00014 Amp		350 ns	12.5

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.