| Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Cycle Time | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
ASYNCHRONOUS |
80 mA |
256 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
1 |
40 MHz |
Not Qualified |
e3 |
30 |
260 |
.005 Amp |
15 ns |
||||||||||||||||
|
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
ASYNCHRONOUS |
100 mA |
2048 words |
3.3 |
3.3 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP56,.3,20 |
FIFOs |
.5 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G56 |
1 |
40 MHz |
Not Qualified |
18432 bit |
e3 |
30 |
260 |
.005 Amp |
15 ns |
|||||||||||||||
|
|
Texas Instruments |
OTHER FIFO |
INDUSTRIAL |
80 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2048 words |
5 |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP80,.55SQ,20 |
FIFOs |
.5 mm |
85 Cel |
3-STATE |
2KX18 |
2K |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
67 MHz |
12 mm |
Not Qualified |
36864 bit |
4.5 V |
e4 |
30 |
260 |
YES |
12 mm |
12 ns |
|||||||
|
|
Texas Instruments |
OTHER FIFO |
INDUSTRIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45.45 ns |
2 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
.4 mA |
256 words |
5 |
5 |
1 |
SMALL OUTLINE |
SOP24,.4 |
FIFOs |
1.27 mm |
85 Cel |
TOTEM POLE |
256X1 |
256 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G24 |
1 |
5.5 V |
2.65 mm |
22 MHz |
7.5 mm |
Not Qualified |
256 bit |
4.5 V |
e4 |
30 |
260 |
NO |
.0004 Amp |
15.4 mm |
20 ns |
|||||
|
Texas Instruments |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC44,.7SQ |
FIFOs |
1.27 mm |
85 Cel |
3-STATE |
2KX9 |
2K |
-40 Cel |
QUAD |
S-PQCC-J44 |
5.5 V |
4.57 mm |
50 MHz |
16.5862 mm |
Not Qualified |
18432 bit |
4.5 V |
BYPASS XCVR |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
.0004 Amp |
16.5862 mm |
25 ns |
|||||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
125 mA |
256 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
2304 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.0005 Amp |
13.97 mm |
25 ns |
||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
40 MHz |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.005 Amp |
13.97 mm |
15 ns |
||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
125 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.0005 Amp |
13.97 mm |
25 ns |
||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
35 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
125 mA |
1024 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.572 mm |
28.5 MHz |
7.62 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
245 |
NO |
.0005 Amp |
34.671 mm |
25 ns |
|||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.556 mm |
40 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.012 Amp |
13.9954 mm |
15 ns |
||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.556 mm |
40 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.012 Amp |
13.9954 mm |
15 ns |
||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
25 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.572 mm |
40 MHz |
7.62 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
245 |
NO |
.012 Amp |
34.671 mm |
15 ns |
|||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.002 Amp |
13.97 mm |
25 ns |
||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
55 mA |
8192 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.6SQ,32 |
FIFOs |
.8 mm |
85 Cel |
8KX18 |
8K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
147456 bit |
3 V |
e0 |
30 |
240 |
YES |
.02 Amp |
14 mm |
10 ns |
|||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
55 mA |
16384 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.6SQ,32 |
FIFOs |
.8 mm |
85 Cel |
16KX18 |
16K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
294912 bit |
3 V |
e0 |
30 |
240 |
YES |
.02 Amp |
14 mm |
10 ns |
|||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
55 mA |
16384 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
16KX18 |
16K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
294912 bit |
3 V |
e0 |
30 |
240 |
YES |
.02 Amp |
10 mm |
10 ns |
|||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
65536 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
64KX18 |
64K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
1179648 bit |
3 V |
e0 |
30 |
240 |
YES |
.02 Amp |
10 mm |
10 ns |
|||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
65536 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
64KX18 |
64K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
1179648 bit |
3 V |
e0 |
30 |
240 |
YES |
.02 Amp |
10 mm |
10 ns |
|||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
40 mA |
65536 words |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
FIFOs |
.5 mm |
85 Cel |
64KX36 |
64K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
2359296 bit |
3.15 V |
RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
e0 |
30 |
225 |
YES |
.015 Amp |
20 mm |
10 ns |
||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
40 mA |
131072 words |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
FIFOs |
.5 mm |
85 Cel |
128KX36 |
128K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.15 V |
RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
e0 |
30 |
225 |
YES |
.015 Amp |
20 mm |
10 ns |
||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
4096 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
FIFOs |
.5 mm |
85 Cel |
4KX18 |
4K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
73728 bit |
3 V |
e0 |
30 |
225 |
YES |
.01 Amp |
20 mm |
10 ns |
||||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
131072 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
85 Cel |
128KX18 |
128K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
2359296 bit |
3 V |
e0 |
30 |
240 |
YES |
.02 Amp |
14 mm |
10 ns |
|||||||
|
|
Cypress Semiconductor |
OTHER FIFO |
INDUSTRIAL |
32 |
TQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
20 mA |
512 words |
3.3 |
3.3 |
9 |
FLATPACK, THIN PROFILE |
TQFP32,.35SQ,32 |
FIFOs |
.8 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G32 |
3 |
3.6 V |
1.2 mm |
66.7 MHz |
7 mm |
Not Qualified |
4608 bit |
3 V |
e3 |
20 |
260 |
YES |
.006 Amp |
7 mm |
11 ns |
FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.
FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.
FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.
One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.