16 Flash Memory 106

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

N25Q256A81ESF40G

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

268435456 words

1.8

1

SMALL OUTLINE

1.27 mm

85 Cel

256MX1

256M

-40 Cel

DUAL

R-PDSO-G16

2 V

2.65 mm

108 MHz

7.5 mm

268435456 bit

1.7 V

10.3 mm

1.8

N25Q128A23BSF40E

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

16777216 words

3

8

SMALL OUTLINE

1.27 mm

85 Cel

16MX8

16M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

108 MHz

7.5 mm

BOTTOM

134217728 bit

2.7 V

30

260

NOR TYPE

10.3 mm

3

MT25QL256ABA8ESF-MSIT

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

33554432 words

3

8

SMALL OUTLINE

1.27 mm

85 Cel

32MX8

32M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

133 MHz

7.5 mm

268435456 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

10.3 mm

3

MX25L12845GMI-08G

Macronix

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

33554432 words

3

4

SMALL OUTLINE

2

1.27 mm

85 Cel

32MX4

32M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

120 MHz

7.52 mm

134217728 bit

2.7 V

CAN BE ORGANISED AS 128 M X 1

NOT SPECIFIED

NOT SPECIFIED

10.3 mm

3

MX25UM51245GMI00

Macronix

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

67108864 words

1.8

8

SMALL OUTLINE

1

1.27 mm

85 Cel

64MX8

64M

-40 Cel

DUAL

R-PDSO-G16

2 V

2.65 mm

133 MHz

7.52 mm

536870912 bit

1.65 V

NOT SPECIFIED

NOT SPECIFIED

10.3 mm

1.8

W25Q32JVSFIQ

Winbond Electronics

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4194304 words

3.3

8

SMALL OUTLINE

1

1.27 mm

85 Cel

4MX8

4M

-40 Cel

MATTE TIN

DUAL

R-PDSO-G16

3.6 V

2.64 mm

133 MHz

7.49 mm

33554432 bit

3 V

2.7V NOMINAL AVAILABLE WITH 104MHZ

e3

260

10.31 mm

3

W25Q64JVSFIM

Winbond Electronics

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

25 mA

8388608 words

3.3

8

SMALL OUTLINE

SOP16,.4

1

20

1.27 mm

85 Cel

3-STATE

8MX8

8M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

3.6 V

2.64 mm

100000 Write/Erase Cycles

133 MHz

7.49 mm

SPI

67108864 bit

3 V

IT ALSO OPERATES AT 2.7V @ 104MHZ

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00005 Amp

10.31 mm

3.3

W25N01GVSFIG

Winbond Electronics

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

134217728 words

3

8

SMALL OUTLINE

1.27 mm

85 Cel

128MX8

128M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.64 mm

104 MHz

7.49 mm

1073741824 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

SLC NAND TYPE

10.31 mm

3

MT25TL256HBA8ESF-0AAT

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

33554432 words

3

8

SMALL OUTLINE

1

1.27 mm

105 Cel

32MX8

32M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

133 MHz

7.5 mm

268435456 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

10.3 mm

3

W25Q256JVFIM

Winbond Electronics

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

25 mA

33554432 words

3.3

8

SMALL OUTLINE

SOP16,.4

20

1.27 mm

85 Cel

3-STATE

32MX8

32M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

3.6 V

2.64 mm

100000 Write/Erase Cycles

133 MHz

7.49 mm

SPI

268435456 bit

3 V

ALSO OPERATES AT 104MHZ AT 2.7-3.0V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00002 Amp

10.31 mm

3.3

IS25LP128F-RMLE

Integrated Silicon Solution

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

30 mA

16777216 words

3

8

SMALL OUTLINE

SOP16,.4

1

20

1.27 mm

105 Cel

3-STATE

16MX8

16M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

3.6 V

2.65 mm

100000 Write/Erase Cycles

166 MHz

7.49 mm

SPI

134217728 bit

2.3 V

ALSO OPERATES WITH 133MHZ @ 2.3VMIN SUPPLY

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00007 Amp

10.31 mm

3

IS25WP512M-RMLE

Integrated Silicon Solution

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

35 mA

67108864 words

1.8

8

SMALL OUTLINE

SOP16,.4

1

20

1.27 mm

105 Cel

3-STATE

64MX8

64M

-40 Cel

Tin (Sn)

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

1.95 V

2.65 mm

100000 Write/Erase Cycles

133 MHz

7.49 mm

SPI

536870912 bit

1.65 V

e3

10

260

NOR TYPE

.00014 Amp

10.31 mm

1.8

M25P16-VMF3PB

Micron Technology

FLASH

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

2097152 words

3

3/3.3

8

SMALL OUTLINE

SOP16,.4

Flash Memories

20

1.27 mm

125 Cel

2MX8

2M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

3.6 V

2.65 mm

100000 Write/Erase Cycles

75 MHz

7.5 mm

Not Qualified

SPI

16777216 bit

2.7 V

NOR TYPE

.0001 Amp

10.3 mm

3

MX25LM51245GMI00

Macronix

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

67108864 words

3

8

SMALL OUTLINE

1

1.27 mm

85 Cel

64MX8

64M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

133 MHz

7.52 mm

536870912 bit

2.7 V

10.3 mm

3

MX25UM25645GMI00

Macronix

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

33554432 words

1.8

8

SMALL OUTLINE

1

1.27 mm

85 Cel

32MX8

32M

-40 Cel

DUAL

R-PDSO-G16

2 V

2.65 mm

133 MHz

7.52 mm

268435456 bit

1.65 V

NOT SPECIFIED

NOT SPECIFIED

10.3 mm

1.8

MT25TL512HBA8ESF-0AAT

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

67108864 words

3

8

SMALL OUTLINE

1

1.27 mm

105 Cel

64MX8

64M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

133 MHz

7.5 mm

536870912 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

10.3 mm

3

IS25LP032D-JMLE-TR

Integrated Silicon Solution

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE

1

1.27 mm

105 Cel

4MX8

4M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

133 MHz

7.49 mm

33554432 bit

2.3 V

NOT SPECIFIED

NOT SPECIFIED

10.31 mm

3

IS25LP256D-RMLE-TR

Integrated Silicon Solution

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

33554432 words

3

8

SMALL OUTLINE

1.27 mm

105 Cel

32MX8

32M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

133 MHz

7.49 mm

268435456 bit

2.3 V

NOT SPECIFIED

NOT SPECIFIED

10.31 mm

3

IS25LP512M-RMLE-TR

Integrated Silicon Solution

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

67108864 words

3

8

SMALL OUTLINE

1

1.27 mm

105 Cel

64MX8

64M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

133 MHz

7.49 mm

536870912 bit

2.3 V

NOT SPECIFIED

NOT SPECIFIED

10.31 mm

3

IS25WP064A-JMLE-TR

Integrated Silicon Solution

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

8388608 words

1.8

8

SMALL OUTLINE

1.27 mm

105 Cel

8MX8

8M

-40 Cel

DUAL

R-PDSO-G16

1.95 V

2.65 mm

133 MHz

7.49 mm

67108864 bit

1.65 V

NOT SPECIFIED

NOT SPECIFIED

10.31 mm

1.8

IS25WP064A-RMLE-TR

Integrated Silicon Solution

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

8388608 words

1.8

8

SMALL OUTLINE

1.27 mm

105 Cel

8MX8

8M

-40 Cel

DUAL

R-PDSO-G16

1.95 V

2.65 mm

133 MHz

7.49 mm

67108864 bit

1.65 V

NOT SPECIFIED

NOT SPECIFIED

10.31 mm

1.8

IS37SML01G1-MLI-TR

Integrated Silicon Solution

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

134217728 words

3.3

8

SMALL OUTLINE

1.27 mm

85 Cel

128MX8

128M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.65 mm

104 MHz

7.49 mm

1073741824 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

SLC NAND TYPE

10.31 mm

3.3

MT29F1G01ABAFDSF-AAT:F

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

ASYNCHRONOUS

1073741824 words

3.3

1

SMALL OUTLINE

105 Cel

1GX1

1G

-40 Cel

DUAL

R-PDSO-G16

1073741824 bit

NOT SPECIFIED

NOT SPECIFIED

SLC NAND TYPE

3.3

W25Q01JVSFIQ

Winbond Electronics

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

134217728 words

3

8

SMALL OUTLINE

2

1.27 mm

85 Cel

128MX8

128M

-40 Cel

DUAL

R-PDSO-G16

3.6 V

2.64 mm

133 MHz

7.49 mm

1073741824 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

10.31 mm

3

W25Q512JVFIQ

Winbond Electronics

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

40 mA

67108864 words

3.3

8

SMALL OUTLINE

SOP16,.4

4

20

1.27 mm

85 Cel

3-STATE

64MX8

64M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

3.6 V

2.64 mm

100000 Write/Erase Cycles

133 MHz

7.49 mm

SPI

536870912 bit

3 V

ALSO OPERATES AT 2.7VMIN @104MHZ

NOR TYPE

.00006 Amp

10.31 mm

3.3

SST25VF080B-50-4I-ZCE

Microchip Technology

FLASH

INDUSTRIAL

16

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

30 mA

8388608 words

1

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA16,4X2,20

100

.5 mm

85 Cel

3-STATE

8MX1

8M

-40 Cel

BOTTOM

1

HARDWARE/SOFTWARE

S-PBGA-B16

3.6 V

.4 mm

100000 Write/Erase Cycles

50 MHz

2 mm

SPI

8388608 bit

2.7 V

NOR TYPE

.00003 Amp

2 mm

W25R256JVFIQ

Winbond Electronics

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

20 mA

33554432 words

3

8

SMALL OUTLINE

SOP16,.4

20

1.27 mm

85 Cel

32MX8

32M

-40 Cel

DUAL

SOFTWARE

R-PDSO-G16

3.6 V

2.64 mm

100000 Write/Erase Cycles

133 MHz

7.49 mm

SPI

268435456 bit

2.7 V

NOR TYPE

.00012 Amp

10.31 mm

3

S25HL01GTDPMHB010

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

69 mA

134217728 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

105 Cel

128MX8

128M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

2560000 Write/Erase Cycles

133 MHz

7.5 mm

SPI

1073741824 bit

2.7 V

NOR TYPE

.00056 Amp

10.3 mm

3

S25HL01GTDPMHB013

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

69 mA

134217728 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

105 Cel

128MX8

128M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

2560000 Write/Erase Cycles

133 MHz

7.5 mm

SPI

1073741824 bit

2.7 V

NOR TYPE

.00056 Amp

10.3 mm

3

S25HL01GTDPMHI010

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

69 mA

134217728 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

85 Cel

128MX8

128M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

2560000 Write/Erase Cycles

133 MHz

7.5 mm

SPI

1073741824 bit

2.7 V

NOR TYPE

.00056 Amp

10.3 mm

3

S25HL01GTDPMHI013

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

69 mA

134217728 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

85 Cel

128MX8

128M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

2560000 Write/Erase Cycles

133 MHz

7.5 mm

SPI

1073741824 bit

2.7 V

NOR TYPE

.00056 Amp

10.3 mm

3

S25HL01GTFAMHI013

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

69 mA

134217728 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

85 Cel

128MX8

128M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

2560000 Write/Erase Cycles

166 MHz

7.5 mm

SPI

1073741824 bit

2.7 V

NOR TYPE

.00056 Amp

10.3 mm

3

S25HL01GTFAMHV010

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

69 mA

134217728 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

105 Cel

128MX8

128M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

2560000 Write/Erase Cycles

166 MHz

7.5 mm

SPI

1073741824 bit

2.7 V

NOR TYPE

.00056 Amp

10.3 mm

3

S25HL01GTFAMHV013

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

69 mA

134217728 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

105 Cel

128MX8

128M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

2560000 Write/Erase Cycles

166 MHz

7.5 mm

SPI

1073741824 bit

2.7 V

NOR TYPE

.00056 Amp

10.3 mm

3

S25HL512TDPMHV013

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

69 mA

67108864 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

105 Cel

64MX8

64M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

1280000 Write/Erase Cycles

133 MHz

7.5 mm

SPI

536870912 bit

2.7 V

NOR TYPE

.00034 Amp

10.3 mm

3

S25HL01GTDPMHA013

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

69 mA

134217728 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

85 Cel

128MX8

128M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

2560000 Write/Erase Cycles

133 MHz

7.5 mm

SPI

1073741824 bit

2.7 V

NOR TYPE

.00056 Amp

10.3 mm

3

S25HL01GTDPMHM013

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

69 mA

134217728 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

125 Cel

128MX8

128M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

2560000 Write/Erase Cycles

133 MHz

7.5 mm

SPI

1073741824 bit

2.7 V

NOR TYPE

.00056 Amp

10.3 mm

3

S25HL512TDPMHV010

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

69 mA

67108864 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

105 Cel

64MX8

64M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

1280000 Write/Erase Cycles

133 MHz

7.5 mm

SPI

536870912 bit

2.7 V

NOR TYPE

.00034 Amp

10.3 mm

3

S25HL512TFAMHM010

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

69 mA

67108864 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

125 Cel

64MX8

64M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

1280000 Write/Erase Cycles

166 MHz

7.5 mm

SPI

536870912 bit

2.7 V

NOR TYPE

.00034 Amp

10.3 mm

3

S25HL512TDPMHI013

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

69 mA

67108864 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

85 Cel

64MX8

64M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

1280000 Write/Erase Cycles

133 MHz

7.5 mm

SPI

536870912 bit

2.7 V

NOR TYPE

.00034 Amp

10.3 mm

3

S25HL512TFAMHB013

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

69 mA

67108864 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

105 Cel

64MX8

64M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

1280000 Write/Erase Cycles

166 MHz

7.5 mm

SPI

536870912 bit

2.7 V

NOR TYPE

.00034 Amp

10.3 mm

3

S25HL512TFAMHI013

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

69 mA

67108864 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

85 Cel

64MX8

64M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

1280000 Write/Erase Cycles

166 MHz

7.5 mm

SPI

536870912 bit

2.7 V

NOR TYPE

.00034 Amp

10.3 mm

3

S25HL512TFAMHM013

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

69 mA

67108864 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

125 Cel

64MX8

64M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

1280000 Write/Erase Cycles

166 MHz

7.5 mm

SPI

536870912 bit

2.7 V

NOR TYPE

.00034 Amp

10.3 mm

3

S25HL512TFAMHV010

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

69 mA

67108864 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

105 Cel

64MX8

64M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

1280000 Write/Erase Cycles

166 MHz

7.5 mm

SPI

536870912 bit

2.7 V

NOR TYPE

.00034 Amp

10.3 mm

3

S25HL512TFAMHV013

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

69 mA

67108864 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

105 Cel

64MX8

64M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

1280000 Write/Erase Cycles

166 MHz

7.5 mm

SPI

536870912 bit

2.7 V

NOR TYPE

.00034 Amp

10.3 mm

3

S25HL01GTDPMHM010

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

69 mA

134217728 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

125 Cel

128MX8

128M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

2560000 Write/Erase Cycles

133 MHz

7.5 mm

SPI

1073741824 bit

2.7 V

NOR TYPE

.00056 Amp

10.3 mm

3

S25HL01GTDPMHV010

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

69 mA

134217728 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

105 Cel

128MX8

128M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

2560000 Write/Erase Cycles

133 MHz

7.5 mm

SPI

1073741824 bit

2.7 V

NOR TYPE

.00056 Amp

10.3 mm

3

S25HL01GTDPMHV013

Infineon Technologies

FLASH

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

69 mA

134217728 words

3

8

SMALL OUTLINE

SOP16,.4

25

1.27 mm

105 Cel

128MX8

128M

-40 Cel

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

2560000 Write/Erase Cycles

133 MHz

7.5 mm

SPI

1073741824 bit

2.7 V

NOR TYPE

.00056 Amp

10.3 mm

3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.