28 Flash Memory 4

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT29C256-12PI	Atmel	FLASH	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	5.59 mm			15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0		NOR TYPE	.0003 Amp	36.95 mm	120 ns	5	YES
AT45DB081B-TC	Atmel	FLASH	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		35 mA	1081344 words	3		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	Flash Memories		.55 mm	70 Cel		1081344X8	1081344	0 Cel			TIN LEAD	DUAL	HARDWARE	R-PDSO-G28	3	3.6 V	1.2 mm		20 MHz	8 mm	Not Qualified		SPI	8650752 bit	2.7 V	ORGANIZED AS 4096 PAGES OF 264 BYTES EACH		e0	240	NOR TYPE	.00001 Amp	11.8 mm		2.7
AT45DB321C-TC	Atmel	FLASH	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	Flash Memories		.55 mm	70 Cel		32MX1	32M	0 Cel			TIN LEAD	DUAL	HARDWARE	R-PDSO-G28	3	3.6 V	1.2 mm		40 MHz	8 mm	Not Qualified		SPI	33554432 bit	2.7 V	ORGANISED AS 8192 PAGES OF 528 BYTES EACH		e0		NOR TYPE	.000015 Amp	11.8 mm		2.7
AT45DB321D-TU-SL383	Dialog Semiconductor	FLASH		28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		17 mA	33554432 words	3			1	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		20	.55 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	8 mm			SPI	33554432 bit	2.7 V					NOR TYPE	.00005 Amp	11.8 mm		2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.